AG-2026.04-2038·math-ph·cross-listed: math.SP
Dynamical delocalization in disordered 2D Chern insulators
Authors
- Gianluca Panati
- Constanza Rojas-Molina
- Vincenzo Rossi
Abstract
We show the existence of energies exhibiting dynamical delocalization in discrete 2D Chern insulators perturbed by a random potential in a general setting. Our proof exploits two main features of the model: jumps in the integer value of the Chern character and continuity of averaged spectral projections in both energy and disorder parameters. This allows us to show robustness of the topological index in the presence of disorder, which, combined with existing methods to prove dynamical localization, allows us to provide detailed information on the phase diagram of the model. The novelty of our approach is that we are able to show dynamical delocalization in the disorder parameter, and not only in the energy parameter, which allows to prove Anderson metal-insulator transition even when spectral gaps close due to the strength of disorder.
Submitted
29 April 20261 month ago
Version
v1
License
CC-BY-4.0
DOI
10.48550/arXiv.2604.27194
Summary
Researchers prove that certain 2D topological materials remain delocalized (electrons spread out) at specific energies even when disorder is added, using the robustness of their topological properties as the key tool.
- The topological index—a number characterizing the material's global properties—stays well-defined even with random impurities, anchoring the analysis.
- By tracking how electron behavior changes both with energy and disorder strength, the authors find regions where electrons delocalize rather than getting trapped, revealing a metal-insulator transition.
- This approach works even when traditional energy gaps vanish under strong disorder, expanding where we can predict metal-to-insulator transitions in topological materials.
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