AG-2026.04-2110·cond-mat.other·cross-listed: cond-mat.mes-hallcond-mat.mtrl-sci
A nanoionic diode: Equilibrium rectifying junction enabling large and stable resistance variations
Authors
- Chuanlian Xiao
- Joachim Maier
Abstract
We report on a new type of rectifier which is in full contact equilibrium and thus, if down-sized to the nanoscale, shows no drift even if exposed to elevated temperatures and/or extreme waiting times. This is in contrast to existing diodes which rely on frozen doping profiles and are hence non-equilibrium devices. Our rectifiers are related to Schottky diodes but employ "dopants" whose mobilities are high enough to follow the electrical field quickly but low enough to not compete with the electrons in terms of conductivities. In order to realize such a device based on mixed conductors, we use nanosized TiO2 films on Ru as a substrate which can store Li at the interface according to a job-sharing mechanism (Li-ions on the TiO2 side, electrons on the Ru side). The excellent functionality of this nanoionic device is demonstrated (e.g., current on-off ratio can exceed 6-7 orders of magnitude) and the additional advantages stressed (such as ease of preparation and tuning the characteristics electrochemically).
Submitted
30 April 20261 month ago
Version
v1
License
CC-BY-4.0
DOI
10.48550/arXiv.2604.28029
Summary
Researchers built a new type of diode that stays stable at high temperatures because mobile ions (rather than frozen dopants) maintain electrical rectification in equilibrium, reaching on-off ratios over a million.
- Unlike conventional diodes, this nanoionic device uses lithium ions that can move freely to maintain rectification, eliminating the drift and degradation that plagues traditional devices over time.
- The device exploits a 'job-sharing' arrangement at a TiO2–ruthenium interface where lithium ions gather on one side and electrons on the other, creating the needed electrical asymmetry without permanent doping.
- The design is simple to make and tune electrochemically, suggesting practical advantages for applications where stability and reliability matter more than miniaturization speed.
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