AG-2026.05-155·cond-mat.mes-hall
Lattice Relaxation in Moiré Heterobilayers
Authors
- Christophe De Beule
- Yiyang Lai
- Liangtao Peng
- Daniel Bennett
- Shaffique Adam
Abstract
We develop an analytical theory for lattice relaxation in twisted moiré heterobilayers, accounting for lattice mismatch, twist, external biaxial heterostrain, and different elastic constants. Starting from continuum elasticity, we derive the self-consistent equations for the in-plane displacement fields and obtain simple perturbative expressions for the layer-resolved in-plane displacement fields induced by lattice relaxation. We apply our theory to graphene on hBN and representative 2H transition metal dichalcogenide heterobilayers, including MoTe$_2$/WSe$_2$ and WSe$_2$/WS$_2$. Our analytical results agree very well with full numerical solutions over experimentally relevant parameters. We further show that heterobilayers can exhibit a buckling instability near alignment, driven by compressive in-plane strain due to moiré relaxation. Our results provide a simple theoretical framework for incorporating lattice relaxation in realistic moiré heterostructures.
Submitted
18 May 20262 weeks ago
Version
v1
License
CC-BY-4.0
DOI
10.48550/arXiv.2605.17805
Summary
Researchers developed a simplified theory predicting how atomic lattices shift and deform in twisted two-layer materials, explaining when and why buckling occurs—with results matching detailed numerical simulations.
- The theory handles the interplay of twist angle, size mismatch between layers, and different elastic properties, yielding closed-form equations that are much faster than full simulations.
- For graphene-on-boron-nitride and other van der Waals stacks, the predicted atomic displacements match experiment-scale observations, validating the analytical approach.
- Near perfect alignment, compressive strain can trigger a buckling instability—a potentially useful design lever for tuning electronic and optical properties of these materials.
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