Experimental Design Space Exploration of Ultra-Low Threshold Hybrid III-V/Si Quantum Dot Microring Lasers

Abstract

In this work, we report on the design strategies and experimental validation of ultra-low threshold ($< 0.8\,\mathrm{mA}$) hybrid III--V/Si quantum dot (InAs/GaAs) micro-ring lasers with optical output powers $> 2\,\mathrm{mW}$ for $1.3\,μ\mathrm{m}$ emission. The multi-dimensional design exploration allows for the demonstration of record wall-plug efficiencies ($\sim 10\%$) and threshold current densities ($109\,\mathrm{A/cm^2}$) for these compact sources on silicon. We also demonstrate the thermal performance of several designs with record characteristic temperature values of $T_0 = 212\,\mathrm{K}$, indicating minimal temperature dependence of the threshold current. In addition, the high differential gain allows for the demonstration of 3-dB bandwidths up to $5\,\mathrm{GHz}$.