An ultralow-loss integrated photonic platform for discrete-variable quantum information processing

Abstract

Photonic integrated circuits offer a scalable and robust route toward quantum information technologies by consolidating photon sources and linear optical networks onto compact, wafer-manufacturable chips. Although silicon photonics has enabled diverse discrete-variable quantum breakthroughs -- spanning multiphoton entanglement, quantum networking, and photonic qubit fusion for quantum computing -- scaling these platforms beyond proof-of-principle demonstrations remains severely constrained by a critical system-level bottleneck. Optical loss compounds rapidly across photon generation, routing, and state analysis, causing multiphoton generation probabilities to plummet exponentially as circuit depth and complexity grow. Here we overcome this rate-loss barrier by demonstrating a monolithic, ultralow-loss silicon nitride (Si$_3$N$_4$) integrated photonic platform engineered for high-performance discrete-variable quantum information processing. Our architecture seamlessly integrates narrowband photon-pair sources with low-loss qubit-fusion circuits and reconfigurable state-analysis interferometers. The on-chip sources prepare Einstein-Podolsky-Rosen (EPR) states with a fidelity of 0.9875(3) and exhibit near-unity photon indistinguishability, yielding a heralded Hong-Ou-Mandel interference visibility of 0.990(6). By executing on-chip fusion of two EPR states, we synthesize and characterize four-photon Greenberger-Horne-Zeilinger states with a record fidelity of 0.943(8) and a fourfold count rate of 27 Hz -- more than two orders of magnitude higher than previous silicon-photonic implementations. Combined with standard CMOS-compatible fabrication on 150-mm-diameter wafers, these results establish ultralow-loss Si$_3$N$_4$ integrated photonics as a definitive, manufacturable platform for deployable, large-scale quantum information processors.