Correlation enhanced resistance hysteresis near half filling in MoS2/WSe2 heterobilayer - Yong Chen; Weikang Zhang; Meizhen Huang; Shengling Xiang; Zishu Zhou; Yaqi Ma; Chenxuan Lou; Haoxi Ji; Aoqian Zhang; Yifei Jin; Liheng An; Zefei Wu; et al. (2026)
Ferroelectricity, typically arising from ionic displacements in noncentrosymmetric lattices, enabling applications in memory devices and sensors. Recent advances in two-dimensional materials and van der Waals heterostructures have revealed novel ferroelectric phenomena, including sliding ferroelectricity and correlation-driven ferroelectricity in moire superlattices. In this work, we fabricate and study a MoS2/WSe2 moire superlattice device exhibiting a high field-effect mobility of 17,650 $cm^2V^{-1}s^{-1}$. Electrical transport measurements reveal correlated insulating states accompanied by a prominent and reproducible resistance hysteresis near half filling. Temperature and displacement field dependence further confirms the correlation-enhanced nature of the hysteresis. Our analysis suggests that displacement field-induced metal-to-insulator transition at correlated insulating state coupled with interfacial dipoles enables the observed resistance hysteresis. These results establish correlation enhanced resistance hysteresis near half filling in a MoS2/WSe2 heterobilayer, offering opportunities for exploring emergent quantum phases and device functionalities.
Keywords: cond-mat.mes-hall