Does silicon's bulk plasmon response change noticeably across realistic temperature or doping variations in deployed detectors?

Looking at your question about silicon's bulk plasmon response under realistic operating conditions—temperature and doping variations—the provided archive doesn't directly address this.

The closest relevant work is [AG-2024.02-1255], which calculates the full material response of silicon *including* bulk plasmon excitation for particle scattering in detectors. However, this paper focuses on the *energy-loss function* at a fixed material state, treating silicon's dielectric response as a known input; it doesn't systematically explore how that response changes across temperature or doping ranges typical of deployed detector operation (say, 77 K to 300 K, or doping densities from 10¹¹ to 10¹⁵ cm⁻³).

The other preprints discuss silicon detector design, quantum defects in silicon, and single-photon avalanche diodes—all important for detector applications—but none characterize the *temperature* or *doping* dependence of bulk plasmon parameters.

To properly answer your question, you'd need condensed-matter literature on silicon's dielectric function across these parameter ranges, which isn't represented in this frontier-physics archive.