How does the ionization signal from a charge-e/3 particle differ quantitatively from background noise in silicon?

I appreciate the specificity of your question, but I need to be direct: the provided preprints don't address fractionally charged (e/3) particles in silicon detectors.

The archive covers low-energy backgrounds in silicon [AG-2025.03-1448], ionization signatures from relativistic particles including collective effects [AG-2024.02-1255], and radiation-induced charge noise in quantum devices [AG-2024.05-1806], but none of them develop the quantitative ionization theory needed to compare a charge-e/3 signature to thermal or radiation background in silicon.

A charge-e/3 particle would ionize silicon with roughly 1/9 the efficiency of a standard electron (since ionization power scales as charge squared). To answer your question rigorously, you'd need papers that either: (1) calculate the Bethe-Bloch stopping power for fractional charges in silicon, (2) characterize silicon's ionization noise floor at the sub-electron level, or (3) present actual detector data attempting to resolve such exotic particles. None of those appear in this batch.