Does silicon's bulk plasmon response change noticeably across realistic temperature or doping variations in deployed detectors?

The preprints provided don't directly address how silicon's bulk plasmon response varies with temperature or doping in deployed detectors.

The one relevant reference is [AG-2024.02-1255], which treats the full material response of silicon *including* bulk plasmon excitation, but it focuses on the *ionization spectrum* from high-velocity particle scattering at a fixed (nominal) detector state—not on how plasmon response changes across realistic operating conditions like temperature swings or intentional doping variations that detectors might experience in the field.

If you're asking because you're designing or troubleshooting a silicon detector system where thermal or doping drift might affect sensitivity, I'd recommend looking for materials-physics papers on silicon's dielectric function as a function of temperature and free-carrier concentration, which would be the physics that governs plasmon resonance frequencies. The archive doesn't appear to cover that topic directly.