Materials Science

AG-2026.05-149

cond-mat.mtrl-sci

Chemo-mechanical coupling stabilizes mixed $\mathrm{Ag}_{x}\mathrm{Cu}_{1-x}\mathrm{GaSe}_{2}$ solar-cell absorbers: Insights from Monte-Carlo simulations assisted by ab initio informed machine-learning potentials

Vasilios Karanikolas, Delwin Perera, Linus Erhard, Jochen Rohrer, Karsten Albe

Alloying Ag into Cu(In,Ga)Se$_2$ has enabled record solar-cell efficiencies ($\sim23.6\%$), yet their long-term stability remains in question because initio calculations predict a Ag-Cu miscibility gap near ambient temperature. By off-lattice Monte-Carlo simulations using a newly developed machine learning (ML) interatomic potential we show that the presence of coherency strain is resolving the controversy between experimental observations and the predicted phase stability. Incorporating elastic energy contributions present in a coherent setup results in complete Ag-Cu miscibility, whereas the expected phase separation occurs in the absence of coherency strains with respect to the end boundary phases, which are mimicked by an incoherent interface with misfit dislocations. The developed ML-MC framework provides a novel approach for resolving discrepancies in thermodynamic stability for systems where mechanical and chemical effects compete.

AG-2026.04-2106

cond-mat.mtrl-sci

Uniaxial strain-driven ferroelastic domain control in LaAlO3

Matthias Roeper, Robin Buschbeck, Jakob Wetzel, Tobias Ritschel, Anna-Lena Hofmann, Vladyslav Kovtunovych, Mike N. Pionteck, Javier Taboada-Gutiérrez, Alexey B. Kuzmenko, Martina Basini, Vivek Unikandanunni, Iuliia Kiseleva, Jochen Geck, Susanne C. Kehr, Maximilian Lederer, Simone Sanna, Lukas M. Eng, Samuel D. Seddon

Multiferroic domain walls in functional oxides exhibit properties distinct from the bulk and are increasingly exploited as active elements in nanoelectronic and photonic devices. Deterministic control of domain populations has typically remained limited to local control, or removal with temperature. Here we demonstrate continuous, reversible manipulation of the ferroelastic domain structure in single-crystal LaAlO$_3$ using in-situ uniaxial strain. Combining atomic force microscopy, X-ray diffraction, and Raman spectroscopy with first-principles calculations we map the complete microscopic evolution of the twin domain population through the strain-driven transition from the rhombohedral $R\bar{3}c$ ground state toward the predicted orthorhombic $Fmmm$ phase. Applied strains below $0.5\%$ produce pronounced surface flattening and large-scale domain reorganisation, establishing uniaxial strain as a technically accessible control parameter for ferroelastic domain engineering. These results open a route to active, real-time programming of domain architectures in LaAlO$_3$-based heterostructures, with implications for strain-tunable superconducting interfaces, nanoscale phonon-polariton optics, and ultrafast lattice control.

AG-2026.04-2118

cond-mat.mtrl-sci

Emergent electric fields driven by phonon-coupled skyrmion resonances

Seno Aji

We develop a coarse-grained theoretical description of the macroscopic emergent electric field generated by phonon-coupled lattice deformations in the breathing and rotational dynamics of a skyrmion lattice under microwave excitation. The analysis identifies the symmetry and dynamical conditions that yield rectified (dc) and oscillating (ac) electric fields, even in the absence of net translational motion of the skyrmion lattice, particularly in the dilute-lattice limit. Using experimentally measurable skyrmion profile parameters such as the equilibrium radius, domain-wall width, and dynamical resonance frequency of skyrmion lattice, the model further enables identification of harmonic components contributing to the observed macroscopic electrodynamic response in the long-wavelength phonon limit ($q \to 0$) and at finite phonon frequency, providing a unified framework for phonon-driven spin-charge-lattice coupling in topological magnets.

AG-2025.12-812

cond-mat.mtrl-sci

Novel phases in the Fe-Si-O system at terapascal pressures

Nan Huang, Renata M. Wentzcovitch, Zepeng Wu, Feng Zheng, Bingxin Wu, Yang Sun, Shunqing Wu

The Fe-Si-O ternary system, central to modeling the interiors of terrestrial planets, remains poorly constrained at Terapascal (TPa) pressures characteristic of super-Earth mantles. Using a combination of crystal-structure prediction and ab initio calculations, we identify three ternary compounds stable near 1 TPa: P3 FeSiO4, P3 Fe4Si5O18, and P-3 FeSi2O6. The first two phases are thermodynamically stable at low temperatures, whereas P-3 FeSi2O6 becomes favored above approximately 2000 K. All three are metallic, paramagnetic, and adopt pseudo-binary arrangements derived from the FeO2 and SiO2 end-member structures. Their crystal structures emerge through substitutions of Fe for Si in Fe2P-type SiO2 or of Si for Fe in Pnma-type FeO2, the stable elemental oxides at ~1 TPa. This structural continuity suggests that Fe preferentially substitutes for Si in the canonical Mg-silicates expected at TPa pressures. Notably, these new pseudo-binaries accommodate Fe in six- and nine-fold coordination, in contrast to the eight-fold cubic coordination found in FeO at similar pressures. The thermodynamic conditions under which these phases form from FeO2 and SiO2 mixtures are clarified through quasi-harmonic free-energy calculations. These phases imply a fundamentally different pattern of Fe incorporation into Mg-silicates at TPa pressures compared with that inferred for Earth's mantle, i.e., mainly [Fe]Mg. Their stability may trigger silicate dissociation into oxides ((Mg,Fe)2(Si,Fe)O4 -> 2(Mg,Fe)O + (Si,Fe)O2) at pressures below ~3 TPa, as expected in the Mg-Si-O system, with the extent of dissociation governed by iron content.

AG-2025.10-1661

cond-mat.mtrl-sci

High-temperature plasma in Casimir physics

Suman Kumar Panja, Mathias Boström

We present a short review of an unusual but important application for a high-temperature charged plasma. The unorthodox proposition was made by Ninham concerning a contribution from Casimir forces across high-temperature electron-positron plasma in nuclear interactions. The key message in the current work is how high temperatures ($\sim10^{11}$ \,K) pop out as essential. Clearly, classical, semi-classical, and quantum considerations for the background media impact both the Casimir effect and the physics of stars and the Universe.

AG-2025.06-305

cond-mat.mtrl-sci

Nonadiabatic Origin of Quantum-Metric Effects via Momentum-Space Metric Tensor

Yafei Ren

We reveal a fundamental geometric structure of momentum space arising from the nonadiabatic evolution of Bloch electrons. By extending semiclassical wave packet theory to incorporate nonadiabatic effects, we introduce a momentum-space metric tensor -- the nonadiabatic metric. This metric gives rise to two velocity corrections, dubbed geometric and geodesic velocities, providing a unified and intuitive framework for understanding nonlinear and nonadiabatic transport phenomena beyond Berry phase effects. The geometric velocity is related to the nonadiabatic metric itself, whereas the geodesic velocity is a Christoffel symbol of the nonadiabatic metric. As the nonadiabatic metric is related to the energy-gap renormalized quantum metric, it unifies the broad quantum metric effects in electronic responses. When the nonadiabatic metric is constant, it reduces to an effective mass, modifying flat-band electron dynamics in confining potentials. In a flat Chern band with harmonic attractive interactions, the two-body wave functions mirror the Landau-level wave functions on a torus. Furthermore, we show that the nonadiabatic metric endows momentum space with a curved geometry, recasting wave packet dynamics as forced geodesic motion.

AG-2024.07-2349

cond-mat.mtrl-sci

Geometrical Perspective on Spin-Lattice Density-Functional Theory

Markus Penz, Robert van Leeuwen

A recently developed viewpoint on the fundamentals of density-functional theory for finite interacting spin-lattice systems that centers around the notion of degeneracy regions is presented. It allows for an entirely geometrical description of the Hohenberg-Kohn theorem and v-representability. The phenomena receive exemplification by an Anderson impurity model and other small-lattice examples. The case of adiabatic change and the time-dependent setting are examined as well.

AG-2024.07-2028

cond-mat.mtrl-sci

Quantum Advancements in Neutron Scattering Reshape Spintronic Devices

M. E. Henderson, D. G. Cory, D. Sarenac, D. A. Pushin

Topological magnetism has sparked an unprecedented age in quantum technologies. Marked by twisted spin structures with exotic dynamical modes, topological magnets have motivated a new generation of spintronic devices which transcend the limits of conventional semiconductor-based electronics. While existing material probes have biased studies and device conceptualizations for thin samples in two dimensions, advancements in three-dimensional probing techniques using beams of neutrons, are transforming our understanding of topological and emergent physics to reimagine spintronic devices. Here, we review recent neutron scattering breakthroughs which harness quantum degrees of freedom to enable three-dimensional topological investigations of quantum materials. We discuss applications of structured and tomographic neutron scattering techniques to topological magnets, with particular emphasis on magnetic skyrmion systems and their inspired three-dimensional logic device infrastructures through novel multi-bit encoding and control schemes. SANS-based dynamic visualizations and coherent manipulations of three-dimensional topological qubits are proposed using electric field controls of depth-dependant helicities and spin-orbit tuning of the neutron beam. Together, these investigations uncover a new world of three-dimensional topological physics which enhances spintronic devices through a novel set of structures, dynamics, and controls, unique to three-dimensional systems.

AG-2024.07-1791

cond-mat.mtrl-sci

Learning local equivariant representations for quantum operators

Zhanghao Zhouyin, Zixi Gan, MingKang Liu, Shishir Kumar Pandey, Linfeng Zhang, Qiangqiang Gu

Predicting quantum operator matrices such as Hamiltonian, overlap, and density matrices in the density functional theory (DFT) framework is crucial for material science. Current methods often focus on individual operators and struggle with efficiency and scalability for large systems. Here we introduce a novel deep learning model, SLEM (strictly localized equivariant message-passing) for predicting multiple quantum operators, that achieves state-of-the-art accuracy while dramatically improving computational efficiency. SLEM's key innovation is its strict locality-based design for equivariant representations of quantum tensors while preserving physical symmetries. This enables complex many-body dependency without expanding the effective receptive field, leading to superior data efficiency and transferability. Using an innovative SO(2) convolution and invariant overlap parameterization, SLEM reduces the computational complexity of high-order tensor products and is therefore capable of handling systems requiring the $f$ and $g$ orbitals in their basis sets. We demonstrate SLEM's capabilities across diverse 2D and 3D materials, achieving high accuracy even with limited training data. SLEM's design facilitates efficient parallelization, potentially extending DFT simulations to systems with device-level sizes, opening new possibilities for large-scale quantum simulations and high-throughput materials discovery.

AG-2024.07-1653

cond-mat.mtrl-sci

Controlling Plasmonic Catalysis via Strong Coupling with Electromagnetic Resonators

Jakub Fojt, Paul Erhart, Christian Schäfer

Plasmonic excitations decay within femtoseconds, leaving non-thermal (often referred to as "hot") charge carriers behind that can be injected into molecular structures to trigger chemical reactions that are otherwise out of reach -- a process known as plasmonic catalysis. In this Letter, we demonstrate that strong coupling between resonator structures and plasmonic nanoparticles can be used to control the spectral overlap between the plasmonic excitation energy and the charge injection energy into nearby molecules. Our atomistic description couples real-time density-functional theory self-consistently to Maxwell's equations via the radiation-reaction potential. Control over the resonator provides then an additional knob for non-intrusively enhancing plasmonic catalysis and dynamically reacting to deterioration of the catalyst -- a new facet of modern catalysis.

AG-2024.06-2002

cond-mat.mtrl-sci

Unusual charge density wave introduced by Janus structure in monolayer vanadium dichalcogenides

Ziqiang Xu, Yan Shao, Chun Huang, Genyu Hu, Shihao Hu, Zhi-Lin Li, Xiaoyu Hao, Yanhui Hou, Teng Zhang, Jin-An Shi, Chen Liu, Jia-Ou Wang, Wu Zhou, Jiadong Zhou, Wei Ji, Jingsi Qiao, Xu Wu, Hong-Jun Gao, Yeliang Wang

As a fundamental structural feature, the symmetry of materials determines the exotic quantum properties in transition metal dichalcogenides (TMDs) with charge density wave (CDW). Breaking the inversion symmetry, the Janus structure, an artificially constructed lattice, provides an opportunity to tune the CDW states and the related properties. However, limited by the difficulties in atomic-level fabrication and material stability, the experimental visualization of the CDW states in 2D TMDs with Janus structure is still rare. Here, using surface selenization of VTe2, we fabricated monolayer Janus VTeSe. With scanning tunneling microscopy, an unusual root13-root13 CDW state with threefold rotational symmetry breaking was observed and characterized. Combined with theoretical calculations, we find this CDW state can be attributed to the charge modulation in the Janus VTeSe, beyond the conventional electron-phonon coupling. Our findings provide a promising platform for studying the CDW states and artificially tuning the electronic properties toward the applications.

AG-2024.06-1971

cond-mat.mtrl-sci

Dissecting van der Waals interactions with Density Functional Theory -- Wannier-basis approach

Diem Thi-Xuan Dang, Dai-Nam Le, Lilia M. Woods

A new scheme for the computation of dispersive interactions from first principles is presented. This cost-effective approach relies on a Wannier function representation compatible with density function theory descriptions. This is an electronic-based many-body method that captures the full electronic and optical response properties of the materials. It provides the foundation to discern van der Waals and induction energies as well as the role of anisotropy and different stacking patterns when computing dispersive interactions in systems. Calculated results for binding energies in benchmarked materials and layered materials, such as graphite, hBN, and MoS$_2$ give encouraging comparisons with available experimental data. Strategies for broadened computational descriptions of dispersive interactions are also discussed. Our investigation aims at stimulating new experimental studies to measure van der Waals energies in a wider range of materials, especially in layered systems.

AG-2024.06-1823

cond-mat.mtrl-sci

Field-sensitive dislocation bound states in two-dimensional $d$-wave altermagnets

Di Zhu, Dongling Liu, Zheng-Yang Zhuang, Zhigang Wu, Zhongbo Yan

When a two-dimensional $d$-wave altermagnet is grown on a substrate, the interplay of momentum-dependent spin splittings arising from altermagnetism and Rashba spin-orbit coupling gives rise to a nodal band structure with band degeneracies enforced by a $C_{4z}\mathcal{T}$ symmetry. If we break the $C_{4z}\mathcal{T}$ symmetry by an exchange field, the band degeneracies are found to be immediately lifted, leading to a topological band structure characterized by nontrivial strong and weak topological indices. Remarkably, both the strong topological index and the $Z_{2}$-valued weak topological indices depend sensitively on the direction of the exchange field. As a consequence of the bulk-defect correspondence, we find that the unique dependence of weak topological indices on the exchange field in this system dictates that the presence or absence of topological bound states at lattice dislocations also depends sensitively on the direction of the exchange field. When the substrate is an $s$-wave superconductor, we find that a similar dependence of band topology on the exchange field gives rise to field-sensitive dislocation Majorana zero modes. As topological dislocation bound states are easily detectable by scanning tunneling microscopy, our findings unveil a promising experimental diagnosis of altermagnetic materials among an ever growing list of candidates.

AG-2024.06-1569

cond-mat.mtrl-sci

Optical read and write of spin states in organic diradicals

Rituparno Chowdhury, Petri Murto, Naitik A. Panjwani, Yan Sun, Pratyush Ghosh, Yorrick Boeije, Vadim Derkach, Seung-Je Woo, Oliver Millington, Daniel G. Congrave, Yao Fu, Tarig B. E. Mustafa, Miguel Monteverde, Jesús Cerdá, Jan Behrends, Akshay Rao, David Beljonne, Alexei Chepelianskii, Hugo Bronstein, Richard H. Friend

Optical control and read-out of the ground state spin structure has been demonstrated for defect states in crystalline semiconductors, including the diamond NV- center, and these are promising systems for quantum technologies. Molecular organic semiconductors offer synthetic control of spin placement, in contrast to current limitations in these crystalline systems. Here we report the discovery of spin-optical addressability in a diradical molecule that comprises two trityl radical groups coupled via a fluorene bridge. We demonstrate the three important properties that enable operation as a spin-photon interface: (i) triplet and singlet spin states show photoluminescence peaked at 640 and 700 nm respectively; this allows easy optical measurement of ground state spin. (ii) the ground state spin exchange is small (~60 μeV) that allows preparation of ground state spin population. This can be achieved by spin-selective excited state intersystem crossing, and we report up to 8% microwave-driven contrast in photoluminescence. (iii) both singlet and triplet manifolds have near-unity photoluminescence quantum yield, which is in contrast to the near-zero quantum yields in prior reports of molecular diradicals. Our results establish these tuneable open-shell organic molecules as a platform to engineer tailor-made spin-optical interfaces.

AG-2024.06-1509

cond-mat.mtrl-sci

Room-temperature entanglement of the nickel-radical molecular complex (Et3NH)[Ni(hfac)2L]

Jozef Strecka, Elham Shahhosseini Shahrabadi

The bipartite entanglement is comprehensively investigated in the mononuclear molecular complex (Et3NH)[Ni(hfac)2L]L, where HL denotes 2-(2-hydroxy-3-methoxy-5-nitrophenyl)-4,4,5,5-tetramethyl-4,5-dihydro-1H-imidazol-3-oxide-1-oxyl and hfacH stands for hexafluoroacetylacetone. From the magnetic point of view, the molecular compound (Et3NH)[Ni(hfac)2L] consists of an exchange-coupled spin-1 Ni2+ magnetic ion and a spin-1/2 nitronyl-nitroxide radical substituted nitrophenol. The nickel-radical molecular complex affords an experimental realization of a mixed spin-(1/2, 1) Heisenberg dimer with a strong antiferromagnetic exchange coupling J/kB = 505 K and two distinct g-factors gRad=2.005 and gNi=2.275. By adopting this set of magnetic parameters we demonstrate that the Zeeman splitting of a quantum ferrimagnetic ground-state doublet due to a weak magnetic field may substantially reinforce the strength of bipartite entanglement at low temperatures. The molecular compound (Et3NH)[Ni(hfac)2L] maintains sufficiently strong thermal entanglement even at room temperature, vanishing only above 546 K. Specifically, the thermal entanglement in the nickel-radical molecular complex retains approximately 40% of the maximum value corresponding to perfectly entangled Bell states at room temperature, which implies that this magnetic compound provides suitable platform of a molecular qubit with potential implications for room-temperature quantum computation and quantum information processing.

AG-2024.05-2295

cond-mat.mtrl-sci

Geodesic nature and quantization of shift vector

Hua Wang, Kai Chang

We present the geodesic nature and quantization of geometric shift vector in quantum systems, with the parameter space defined by the Bloch momentum, using the Wilson loop approach. Our analysis extends to include bosonic phonon drag shift vectors with non-vertical transitions. We demonstrate that the gauge invariant shift vector can be quantized as integer values, analogous to the Euler characteristic based on the Gauss-Bonnet theorem for a manifold with a smooth boundary. We reveal intricate relationships among geometric quantities such as the shift vector, Berry curvature, and quantum metric. Our findings demonstrate that the loop integral of the shift vector in the quantized interband formula contributes to the non-quantized component of the trace of conductivity in the circular photogalvanic effect. The Wilson loop method facilitates first-principles calculations, providing insights in the geometric underpinnings of these interband gauge invariant quantities and shedding light on their nonlinear optical manifestations in real materials.

AG-2024.05-868

cond-mat.mtrl-sci

Magnetic Weyl semimetals as a source of circularly polarized THz radiation

Jeremy Hansen, Kazuki Ikeda, Dmitri E. Kharzeev, Qiang Li, Kirill Tuchin

We propose to use the electromagnetic radiation induced by a few MeV electron beam in magnetic Weyl semimetals as a source of the circularly polarized photons in the THz frequency range.

AG-2024.05-2029

cond-mat.mtrl-sci

Antiferromagnetic Quantum Anomalous Hall Effect Modulated by Spin Flips and Flops

Zichen Lian, Yongchao Wang, Yongqian Wang, Yang Feng, Zehao Dong, Shuai Yang, Liangcai Xu, Yaoxin Li, Bohan Fu, Yuetan Li, Wanjun Jiang, Chang Liu, Jinsong Zhang, Yayu Wang

The interplay between nontrivial band topology and layered antiferromagnetism in MnBi2Te4 has opened up a new avenue for exploring topological phases of matter. Representative examples include the quantum anomalous Hall effect and axion insulator state observed in odd and even number layers of MnBi2Te4, when the top and bottom surfaces have parallel and antiparallel spin alignments respectively. The rich and complex spin dynamics associated with the van der Waals antiferromagnetic order is expected to generate novel topological phases and phase transitions that are unique to MnBi2Te4. Here we fabricate a device of 7-septuple-layer MnBi2Te4 covered with AlOx capping layer, which enables the investigation of antiferromagnetic quantum anomalous Hall effect over wide parameter spaces. By tuning the gate voltage and perpendicular magnetic field, we uncover a cascade of quantum phase transitions that can be attributed to the influence of spin configurations on charge transport. Furthermore, we find that an in-plane magnetic field enhances both the coercive field and exchange gap of the surface state, in sharp contrast to that in ferromagnetic quantum anomalous Hall state. We propose that these peculiar features arise from the spin flip and flop transitions inherent to van der Waals antiferromagnet. The versatile tunability of the quantum anomalous Hall effect in MnBi2Te4 paves the way for potential applications in topological antiferromagnetic spintronics.

AG-2024.05-2017

cond-mat.mtrl-sci

Quantum Beats of a Multiexciton State in Rubrene Single Crystals

Eric A. Wolf, Drew M. Finton, Vincent Zoutenbier, Ivan Biaggio

We observe quantum beats in the nanosecond-scale photoluminescence decay of rubrene single crystals after photoexcitation with short laser pulses in a magnetic field of 0.1 to 0.3 T. The relative amplitude of the quantum beats is of the order of 5\%. Their frequency is $1.3$ GHz when the magnetic field is oriented parallel to the two-fold rotation axis of the rubrene molecules and decreases to $0.6$ GHz when the magnetic field is rotated to the crystal's molecular stacking direction. The amplitude of the quantum beats decays alongside the non-oscillatory photoluminescence background, which at low excitation densities has an exponential decay time of $ 4.0 \pm 0.2$~ns. We interpret this as the effective lifetime of a multiexciton state that originates from singlet-fission and can undergo geminate recombination back to the singlet state.

AG-2024.05-1938

cond-mat.mtrl-sci

Dual role of longitudinal optical phonons for generation of coherent oscillations in gallium arsenide under optical pumping

Itsuki Takagi, Yuma Konno, Yosuke Kayanuma, Kazutaka G. Nakamura

We present a novel and simple picture of the generation dynamics of coherent longitudinal optical (LO) phonons and LO-phonon-plasmon-coupled (LOPC) modes by the ultrafast infrared pump-pulses in gallium arsenide (GaAs) employing the low-temperature approximation. LO phonons exhibit a pronounced coupling with plasmons formed by the optically excited electrons in the excited states of GaAs. This coupling results in the coherent oscillation of the LOPC modes in the excited states. The pump pulse also induces stimulated Raman scattering, which generates the coherent LO-phonon oscillation in the ground state. This picture is incorporated into a simplified model, and the time evolution of the density operator is calculated using the Lindblad-type quantum master equation. The theoretical results explain well the reported experimental results on the coherent oscillation of LO phonons and LOPC modes observed through transient reflection measurements. Above all, our model provides a natural reason for the simultaneous manifestation of the LO phonons and the LOPC modes.

AG-2024.05-1930

cond-mat.mtrl-sci

Mixed quantum-classical modeling of exciton-phonon scattering in solids: Application to optical linewidths of monolayer MoS2

Alex Krotz, Roel Tempelaar

We present a mixed quantum-classical framework for the microscopic and non-Markovian modeling of exciton-phonon scattering in solid-state materials, and apply it to calculate the optical linewidths of monolayer MoS2. Within this framework, we combine reciprocal-space mixed quantum-classical dynamics with models for the quasiparticle band structure as well as the electron-hole and carrier-phonon interactions, parametrized against ab initio calculations, although noting that a direct interfacing with ab initio calculations is straightforward in principle. We introduce various parameters for truncating the Brillouin zone to select regions of interest. Variations of these parameters allow us to determine linewidths in the limit of asymptotic material sizes. Obtained asymptotic linewidths are found to agree favorably with experimental measurements across a range of temperatures. As such, our framework establishes itself as a promising route towards unraveling the non-Markovian and microscopic principles governing the nonadiabatic dynamics of solids.

AG-2024.05-1831

cond-mat.mtrl-sci

Discovery of T center-like quantum defects in silicon

Yihuang Xiong, Jiongzhi Zheng, Shay McBride, Xueyue Zhang, Sinéad M. Griffin, Geoffroy Hautier

Quantum technologies would benefit from the development of high performance quantum defects acting as single-photon emitters or spin-photon interface. Finding such a quantum defect in silicon is especially appealing in view of its favorable spin bath and high processability. While some color centers in silicon have been emerging in quantum applications, there is still a need to search and develop new high performance quantum emitters. Searching a high-throughput computational database of more than 22,000 charged complex defects in silicon, we identify a series of defects formed by a group III element combined with carbon ((A-C)$\rm _{Si}$ with A=B,Al,Ga,In,Tl) and substituting on a silicon site. These defects are analogous structurally, electronically and chemically to the well-known T center in silicon ((C-C-H)$\rm_{Si}$) and their optical properties are mainly driven by an unpaired electron in a carbon $p$ orbital. They all emit in the telecom and some of these color centers show improved properties compared to the T center in terms of computed radiative lifetime or emission efficiency. We also show that the synthesis of hydrogenated T center-like defects followed by a dehydrogenation annealing step could be an efficient way of synthesis. All the T center-like defects show a higher symmetry than the T center making them easier to align with magnetic fields. Our work motivates further studies on the synthesis and control of this new family of quantum defects, and also demonstrates the use of high-throughput computational screening to detect new complex quantum defects.

AG-2024.05-1665

cond-mat.mtrl-sci

Spectral Features of the Fourth Order Irreducible Correlations in a Monolayer Semiconductor

Jiacheng Tang, Cun-Zheng Ning

Understanding high-order correlations or multi-particle entities in a many-body system is not only of fundamental importance in condensed matter physics, but also critical for many technological applications. So far, higher-order multi-particle irreducible correlations in semiconductors have not been studied beyond the second-order or two-particle case. In this paper, we study the correlation of two electrons and two holes (2e2h) using the four-body Bethe-Salpeter equation (4B-BSE) and applied to the calculation of the helicity-resolved absorption between the two-body and four-body states for a monolayer MoTe2. Surprisingly, we found a rich series of spectral peaks within an energy span of ~40 meV below the exciton that has not been seen before. To understand the origin of the new spectral peaks, the Feynman diagrams of the 4B BSE are recast into the cluster expansion formalism, allowing us to study the individual effects of selected clusters or correlations of various orders. We found that the irreducible clusters of orders up to the 3rd and their factorized combinations cannot explain the spectral features. Importantly, we found that the 4th order irreducible correlation is necessary and sufficient to explain the new features. The 4th order irreducible correlation corresponds to a four-particle irreducible cluster involving two electrons and two holes, alternatively called quadron or quadruplon. The new 4th order correlation or four-particle entity not only enriches our understanding of many-body correlations but also could provide new mechanism for light emission or absorption for possible new optoelectronic devices.

AG-2024.05-1625

cond-mat.mtrl-sci

Optically detected magnetic resonance study of thermal effects due to absorbing environment around nitrogen-vacancy-nanodiamond powders

Mona Jani, Zuzanna Orzechowska, Mariusz Mrozek, Marzena Mitura-Nowak, Wojciech Gawlik, Adam M. Wojciechowski

We implanted Fe$^+$ ions in nanodiamond (ND) powder containing negatively charged nitrogen-vacancy (NV-) centers and studied their Raman spectra and optically detected magnetic resonance (ODMR) in various applied magnetic fields with green light (532 nm) excitation. In Raman spectra, we observed a blue shift of the NV$^-$ peak associated with the conversion of the electronic sp$^3$ configuration to the disordered sp$^2$ one typical for the carbon/graphite structure. In the ODMR spectra, we observed a red shift of the resonance position caused by local heating by an absorptive environment that recovers after annealing. To reveal the red shift mechanism in ODMR, we created a controlled absorptive environment around ND by adding iron-based Fe$_2$O$_3$ and graphitic sp$^2$ powders to the ND suspension. This admixture caused a substantial increase in the observed shift proportional to the applied laser power, corresponding to an increase in the local temperature by 150-180 K. This surprisingly large shift is absent in non-irradiated NV-ND powders, is associated only with the modification of the local temperature by the absorptive environment of NV-NDs and can be studied using ODMR signals of NV$^-$.

AG-2024.04-2372

cond-mat.mtrl-sci

Negative transit time in non-tunneling electron transmission through graphene multilayers

E. E. Krasovskii, R. O. Kuzian

Attosecond dynamics of electron transmission through atomically-thin crystalline films is studied with an {\em ab initio} scattering theory. The temporal character of the electron propagation through graphene multilayers is traced to the band structure of bulk graphite: In the forbidden gaps the wave packet transit time $τ_\mathrm{T}$ saturates with thickness and in the allowed bands $τ_\mathrm{T}$ oscillates following transmission resonances. Hitherto unknown negative transit time due to in-plane scattering is discovered in monolayers of graphene, h-BN, and oxygen. Moreover, Wigner time delay is found to diverge at the scattering resonances caused by the emergence of secondary diffracted beams. This offers a way to manipulate the propagation timing of the wave packet without sacrificing the transmitted intensity. The spatial reshaping of the wave packet at the resonances may help elucidate details of the streaking by an inhomogeneous field at the surface.

AG-2024.04-2042

cond-mat.mtrl-sci

Exploring Quantum Materials & Applications: A Review

Rajat Kumar Goyal

Current condensed matter research is centered on advanced materials and their distinctive features. The interest in Quantum materials (QMs) continues to increase without any decrease due to their novel phenomenon and potential as platforms for revolutionary new technologies in modern science and technology. This article emphasizes the exploration of diverse devices and applications facilitated by the unique properties of QMs. Encompassing fields like quantum computing, metrology, sensing, energy, and communication, the review highlights their transformative potential. In QMs, the emerging phenomena are governed by quantum confinement, strong electronic correlations, topology, and symmetry, which makes these materials apart, making them exceptional in their own regard. This paper emphasizes their unique properties, different types of QMs, various interdisciplinary applications, and integration with existing technologies. This study provides a concise overview of diverse discoveries and advancements, presenting a prospective outlook on QMs in multiple domains.

AG-2024.04-1585

cond-mat.mtrl-sci

Formation and Microwave Losses of Hydrides in Superconducting Niobium Thin Films Resulting from Fluoride Chemical Processing

Carlos G. Torres-Castanedo, Dominic P. Goronzy, Thang Pham, Anthony McFadden, Nicholas Materise, Paul Masih Das, Matthew Cheng, Dmitry Lebedev, Stephanie M. Ribet, Mitchell J. Walker, David A. Garcia-Wetten, Cameron J. Kopas, Jayss Marshall, Ella Lachman, Nikolay Zhelev, James A. Sauls, Joshua Y. Mutus, Corey Rae H. McRae, Vinayak P. Dravid, Michael J. Bedzyk, Mark C. Hersam

Superconducting Nb thin films have recently attracted significant attention due to their utility for quantum information technologies. In the processing of Nb thin films, fluoride-based chemical etchants are commonly used to remove surface oxides that are known to affect superconducting quantum devices adversely. However, these same etchants can also introduce hydrogen to form Nb hydrides, potentially negatively impacting microwave loss performance. Here, we present comprehensive materials characterization of Nb hydrides formed in Nb thin films as a function of fluoride chemical treatments. In particular, secondary-ion mass spectrometry, X-ray scattering, and transmission electron microscopy reveal the spatial distribution and phase transformation of Nb hydrides. The rate of hydride formation is determined by the fluoride solution acidity and the etch rate of Nb2O5, which acts as a diffusion barrier for hydrogen into Nb. The resulting Nb hydrides are detrimental to Nb superconducting properties and lead to increased power-independent microwave loss in coplanar waveguide resonators. However, Nb hydrides do not correlate with two-level system loss or device aging mechanisms. Overall, this work provides insight into the formation of Nb hydrides and their role in microwave loss, thus guiding ongoing efforts to maximize coherence time in superconducting quantum devices.

AG-2024.04-1578

cond-mat.mtrl-sci

Enhancing the efficiency of polariton OLEDs in and beyond the single-excitation subspace

Olli Siltanen, Kimmo Luoma, Andrew J. Musser, Konstantinos S. Daskalakis

Organic light-emitting diodes (OLEDs) have redefined lighting with their environment-friendliness and flexibility. However, only 25 % of the electronic states of organic molecules can emit light upon electrical excitation, limiting the overall efficiency of OLEDs. Strong light-matter coupling, achieved by confining light within OLEDs using mirrors, creates hybrid light-matter states known as polaritons, which could "activate" the remaining 75 % electronic triplet states. Here, we study triplet-to-polariton transition and derive rates for both reverse inter-system crossing and triplet-triplet annihilation. In addition, we explore how the harmful singlet-singlet annihilation could be reduced with strong coupling.

AG-2024.03-2209

cond-mat.mtrl-sci

Phase-space representation of coherent states generated through SUSY QM for tilted anisotropic Dirac materials

Daniel O-Campa, Erik Díaz-Bautista

In this paper, we examine the electron interaction within tilted anisotropic Dirac materials when subjected to external electric and magnetic fields possessing translational symmetry. Specifically, we focus on a distinct non-zero electric field magnitude, enabling the decoupling of the differential equation system inherent in the eigenvalue problem. Subsequently, employing supersymmetric quantum mechanics facilitates the determination of eigenstates and eigenvalues corresponding to the Hamiltonian operator. To delve into a semi-classical analysis of the system, we identify a set of coherent states. Finally, we assess the characteristics of these states using fidelity and the phase-space representation through the Wigner function.

AG-2024.03-2050

cond-mat.mtrl-sci

All van der Waals three-terminal SOT-MRAM realized by topological ferromagnet Fe3GeTe2

Jingyuan Cui, Kai-Xuan Zhang, Je-Geun Park

Magnetic van der Waals (vdW) materials have attracted massive attention because of their academic interest and application potential for the past few years. Its main advantage is the intrinsic two-dimensionality, enabling much smaller devices of novel concepts. One particular exciting direction lies in the current-driven spin-orbit torque (SOT). Here, we, for the first time, realize an all vdW three-terminal SOT memory, employing the unique physics principle of gigantic intrinsic SOT of Fe3GeTe2 (FGT) and the well-known industry-adopted tunnelling magnetoresistance (TMR) effect. We designed the device operation procedure and fabricated the FGT/h-BN/FGT vdW heterostructure as a proof of concept. This device exhibits a classical TMR effect and unambiguously demonstrates the conception by precise performance as expected: the magnetic information of the top-FGT is written by current-driven SOT and read out by TMR separately. The writing and reading current paths are physically decoupled, enhancing the design and optimization flexibility substantially and further strengthening the device's endurance naturally. Our work would prompt more expansive use of vdW magnets for spintronic applications.

AG-2024.03-1779

cond-mat.mtrl-sci

Room temperature quantum emitters in van der Waals α-MoO3

Jeonghan Lee, Haiyuan Wang, Keun-Yeol Park, Soonsang Huh, Donghan Kim, Mihyang Yu, Changyoung Kim, Kristian Sommer Thygesen, Jieun Lee

Quantum emitters in solid-state materials are highly promising building blocks for quantum information processing and communication science. Recently, single-photon emission from van der Waals materials has been reported in transition metal dichalcogenides and hexagonal boron nitride, exhibiting the potential to realize photonic quantum technologies in two-dimensional materials. Here, we report the generation of room temperature single-photon emission from exfoliated and thermally annealed single crystals of van der Waals α-MoO3. The second-order correlation function measurement displays a clear photon antibunching, while the luminescence intensity exceeds 0.4 Mcts/s and remains stable under laser excitation. The theoretical calculation suggests that an oxygen vacancy defect is a possible candidate for the observed emitters. Together with photostability and brightness, quantum emitters in α-MoO3 provide a new avenue to realize photon-based quantum information science in van der Waals materials.

AG-2024.02-2137

cond-mat.mtrl-sci

Impact of etches on thin-film single-crystal niobium resonators

H. Wang, T. Banerjee, T. G. Farinha, A. T. Hanbicki, V. Fatemi, B. S. Palmer, C. J. K. Richardson

A single crystal niobium thin film was grown using molecular beam epitaxy on a c-plane sapphire wafer. Several samples were fabricated into dc resistivity test devices and coplanar waveguide resonator chips using the same microfabrication procedures and solvent cleans. The samples were then subject to different acid cleaning treatments using different combinations of piranha, hydrofluoric acid, and buffered oxide etch solutions. The different samples expressed changes in dc resistivity in the normal and superconducting states such that the low temperature resistivities changed by more than 100\%, and the residual resistivity ratio dropped by a factor of 2. The internal quality factor of coplanar waveguide resonators measured near 5~GHz also showed significant variation at single photon powers ranging from 1.4$\times 10^6$ to less than 60$\times 10^3$. These changes correlate with the formation of surface crystallites that appear to be hydrocarbons. All observations are consistent with hydrogen diffusing into the niobium film at levels below the saturation threshold that is needed to observe niobium hydrides.

AG-2024.02-2002

cond-mat.mtrl-sci

Topological and superconducting properties of two-dimensional C6-2x(BN)x biphenylene network: a first-principles investigation

Guang F. Yang, Hong X. Song, Dan Wang, Hao Wang, Hua Y. Geng

First-principles calculations have been used to investigate the electronic and topological properties of the two-dimensional C6-2x(BN)x biphenylene network, a graphene-like structure composed of not only hexagonal ring but also octagonal and square rings. Nontrivial topological properties have been found in two of them, with a stoichiometry of C4BN and C2(BN)2. The former C4BN is predicted to be a type-II Dirac semimetal with a superconducting critical temperature Tc=0.38K, which is similar to the pure carbon biphenylene network (C-BPN). The latter shows a novel isolated edge state exists between the conduction and valence bands. By regulation of strains and virtual-crystal approximation calculations, we found the annihilation of two pairs of Dirac points (DPs) in the non-high symmetric region (non-HSR) causes the two corresponding edge states stick together to generate this isolated edge state. In addition, we found that one pair of DPs arises from the shift of DPs in the C-BPN, while another new pair of DPs emerges around the Time Reversal Invariant Momenta (TRIM) point X due to the doping of boron and nitrogen. We constructed a tight-binding (TB) model to reveal the mechanism of forming the isolated edge state from the C-BPN to C2(BN)2. This study not only demonstrates the existence and mechanism of forming the isolated edge state in semimetals, but also provides an example in which the DPs can move away from the high-symmetry region.

AG-2024.02-2001

cond-mat.mtrl-sci

Universal Metallic Surface States in Electride

Dan Wang, Hongxing Song, Leilei Zhang, Hao Wang, Yi Sun, Fengchao Wu, Ying Chen, Xiangrong Chen, Hua Y. Geng

Robust metallic surface states (MSS) of topological insulator (TI) against imperfections and perturbations are important in broad applications such as chemical catalysis and quantum computing. Unfortunately, they are suffered from the narrow band gap that can be accessed. Searching for MSS with large bulk band gap beyond conventional TIs becomes a quest. In this work, inspired by the adiabatic connection principle in real space, we identify that all electrides, a new class of emerging materials, must host robust and universal MSS that resists any disturbances, in spite of the fact that some of them could be classified as trivial in standard topology theory. This counterintuitive property is traced to the specific charge localization-delocalization change intrinsic to electride when approaching the crystalline surface or interface, which is a kind of interstice-centered to atom-centered transition in the real-space topology of the charge density distribution, and is sharply different from the band inversion in the standard topology theory. The new mechanism circumvents the obstacle that limits the band gap of TI. Robust and universal MSS in an electride that conventionally-determined as trivial but with a colossal band gap beyond 6.13 eV are demonstrated. This gap size is about 6-fold larger than the highest record of known "wide-gap" TIs, thus opens up new avenues to universal MSS with gigantic bulk gap.

AG-2024.02-1929

cond-mat.mtrl-sci

Unraveling the origin of antiferromagnetic coupling at YIG/permalloy interface

Jiangchao Qian, Yi Li, Zhihao Jiang, Robert Busch, Hsu-Chih Ni, Tzu-Hsiang Lo, Axel Hoffmann, André Schleife, Jian-Min Zuo

We investigate the structural and electronic origin of antiferromagnetic (AFM) coupling in the Yttrium iron garnet (YIG) and permalloy (Py) bilayer system at the atomic level. Ferromagnetic Resonance (FMR) reveal unique hybrid modes in samples prepared with surface ion milling, indicative of antiferromagnetic exchange coupling at the YIG/Py interface. Using atomic resolution scanning transmission electron microscopy (STEM), we found that AFM coupling appears at the YIG/Py interface of the tetrahedral YIG surface formed with ion milling. The STEM measurements suggest that the interfacial AFM coupling is predominantly driven by an oxygen-mediated super-exchange coupling mechanism, which is confirmed by the density functional theory (DFT) calculations to be energetically favorable. Thus, the combined experimental and theoretical results reveal the critical role of interfacial atomic structure in determining the type magnetic coupling in a YIG/ferromagnet heterostructure, and prove that the interfacial structure can be experimentally tuned by surface ion-milling.

AG-2024.02-1893

cond-mat.mtrl-sci

Tunable topological phases in nanographene-based spin-1/2 alternating-exchange Heisenberg chains

Chenxiao Zhao, Gonçalo Catarina, Jin-Jiang Zhang, João C. G. Henriques, Lin Yang, Ji Ma, Xinliang Feng, Oliver Gröning, Pascal Ruffieux, Joaquín Fernández-Rossier, Roman Fasel

Unlocking the potential of topological order within many-body spin systems has long been a central pursuit in the realm of quantum materials. Despite extensive efforts, the quest for a versatile platform enabling site-selective spin manipulation, essential for tuning and probing diverse topological phases, has persisted. Here, we utilize on-surface synthesis to construct spin-1/2 alternating-exchange Heisenberg (AH) chains[1] with antiferromagnetic couplings $J_1$ and $J_2$ by covalently linking Clar's goblets -- nanographenes each hosting two antiferromagnetically-coupled unpaired electrons[2]. Utilizing scanning tunneling microscopy, we exert atomic-scale control over the spin chain lengths, parities and exchange-coupling terminations, and probe their magnetic response by means of inelastic tunneling spectroscopy. Our investigation confirms the gapped nature of bulk excitations in the chains, known as triplons[3]. Besides, the triplon dispersion relation is successfully extracted from the spatial variation of tunneling spectral amplitudes. Furthermore, depending on the parity and termination of chains, we observe varying numbers of in-gap $S=1/2$ edge spins, enabling the determination of the degeneracy of distinct topological ground states in the thermodynamic limit-either 1, 2, or 4. By monitoring interactions between these edge spins, we identify the exponential decay of spin correlations. Our experimental findings, corroborated by theoretical calculations, present a phase-controlled many-body platform, opening promising avenues toward the development of spin-based quantum devices.

AG-2024.02-1756

cond-mat.mtrl-sci

Kadanoff-Baym equations for interacting systems with dissipative Lindbladian dynamics

Gianluca Stefanucci

The extraordinary quantum properties of nonequilibrium systems governed by dissipative dynamics have become a focal point in contemporary scientific inquiry. The Nonequilibrium Green's Functions (NEGF) theory provides a versatile method for addressing driven {\em non-dissipative} systems, utilizing the powerful diagrammatic technique to incorporate correlation effects. We here present a second-quantization approach to the {\em dissipative} NEGF theory, reformulating Keldysh ideas to accommodate Lindbladian dynamics and extending the Kadanoff-Baym equations accordingly. Generalizing diagrammatic perturbation theory for many-body Lindblad operators, the formalism enables correlated and dissipative real-time simulations for the exploration of transient and steady-state changes in the electronic, transport, and optical properties of materials.

AG-2024.02-1387

cond-mat.mtrl-sci

Controlling magnon-photon coupling in a planar geometry

Dinesh Wagle, Anish Rai, Mojtaba T. Kaffash, M. Benjamin Jungfleisch

The tunability of magnons enables their interaction with various other quantum excitations, including photons, paving the route for novel hybrid quantum systems. Here, we study magnon-photon coupling using a high-quality factor split-ring resonator and single-crystal yttrium iron garnet (YIG) spheres at room temperature. We investigate the dependence of the coupling strength on the size of the sphere and find that the coupling is stronger for spheres with a larger diameter as predicted by theory. Furthermore, we demonstrate strong magnon-photon coupling by varying the position of the YIG sphere within the resonator. Our experimental results reveal the expected correlation between the coupling strength and the rf magnetic field. These findings demonstrate the control of coherent magnon-photon coupling through the theoretically predicted square-root dependence on the spin density in the ferromagnetic medium and the magnetic dipolar interaction in a planar resonator.

AG-2024.01-2209

cond-mat.mtrl-sci

Cu$_2$ZnSiTe$_4$: A potential thermoelectric material with promising electronic transport

Himanshu Sharma, Bhawna Sahni, Tanusri Saha-Dasgupta, Aftab Alam

Transition metal-based quaternary chalcogenides have gathered immense attention for various renewable energy applications including thermoelectrics (TE). While low-symmetry and complex structure help to achieve low thermal conductivity, the TE power factor and hence the figure of merit (ZT) remains low which hinders to promote these class of materials for future TE applications. Here, we investigated the TE properties of a new system, Cu$_2$ZnSiTe$_4$, with improved electronic transport using first-principles calculation. The presence of heavy chalcogen like Te, helps to achieve a relatively low bandgap (0.58 eV). This, together with unique electronic band topology, leads to a promising value of power-factor of 3.95(n-type) and 3.06(p-type) mWm$^{-1}$K$^{-2}$ at 900 K. Te atoms also play a crucial role in mixing the optical and acoustic phonon branches which, in turn, are responsible for reduced lattice thermal conductivity ($\sim$0.7 Wm$^{-1}$K$^{-1}$ at high temperature). Though the thermal conductivity is not appreciably low, the electronic transport properties (power factor) are quite favorable to yield promising TE figure of merit (ZT $\sim$2.67 (n-type) and $\sim$2.11 (p-type) at 900 K). We propose Cu$_2$ZnSiTe$_4$ to be a potential candidate for TE applications, and believe to attract future experimental/theoretical studies.

AG-2024.01-2227

cond-mat.mtrl-sci

Symmetry Lowering Through Surface Engineering and Improved Thermoelectric Properties in MXenes

Himangshu Murari, Subhradip Ghosh

Despite ample evidence of their influences on the transport properties of two-dimensional solids, the interrelations of reduced symmetry, electronic and thermal transport, have rarely being discussed in the context of thermoelectric materials. With the motivation to design new thermoelectric materials with improved properties, we have addressed these by performing first-principles Density Functional Theory based calculations in conjunction with semi-classical Boltzmann transport theory on a number of compounds in the MXene family. The symmetry lowering in parent M$_{2}$CO$_{2}$ MXenes are done by replacing transition metal $M$ on one surface, resulting in Janus compounds MM$^{\prime}$CO$_{2}$. Our calculations show that the thermoelectric figure-of-merit can be improved significantly by such surface engineering. We discuss in detail, both qualitatively and quantitatively, the origin behind high thermoelectric parameters for these compounds. Our in-depth analysis shows that the modifications in the electronic band structures and degree of anharmonicity driven by the dispersions in the bond strengths due to lowering of symmetry, an artefact of surface engineering, are the factors behind the trends in the thermoelectric parameters of the MXenes considered. The results also substantiate that the compositional flexibility offered by the MXene family of compounds can generate complex interplay of symmetry, electronic structure, bond strengths and anharmonicity which can be exploited to engineer thermoelectric materials with improved properties.

AG-2024.01-2244

cond-mat.mtrl-sci

Spatially resolved mapping of coherent twin relationships in DFXM measurements

Mads Carlsen, Marion Hoefling, Carsten Detlefs, Hugh Simons

With dark firld x-ray microscopy, it is possible to measure reciprocal space manps of localized volumes embedded deeply in a large sample. Ferroelastic materials contains elastic twins that display characteristing splitting of diffraction peaks. We show how to utilize established methods for analysing reciprocal space maps of elastically twinned materials to the analysis of dark-field x-ray microscopy data to detemin the exact kind of domain wall present in each probed volume, even when the domains are not spatially resolved.

AG-2024.01-2253

cond-mat.mtrl-sci

Rapid screening of molecular beam epitaxy conditions for monoclinic (InxGa1-x)2O3 alloys

Stephen Schaefer, Davi Febba, Kingsley Egbo, Glenn Teeter, Andriy Zakutayev, Brooks Tellekamp

Molecular beam epitaxy is one of the highest quality growth methods, capable of achieving theoretical material property limits and unprecedented device performance. However, such ultimate quality usually comes at the cost of painstaking optimization of synthesis conditions and slow experimental iteration rates. Here we report on high-throughput molecular beam epitaxy with rapid screening of synthesis conditions using a novel cyclical growth and in-situ etch method. This novel approach leverages sub-oxide desorption present during molecular beam epitaxy and as such should be broadly applicable to other material systems. As a proof of concept, this method is applied to rapidly investigate the growth space for the ternary alloy (InxGa1-x)2O3 on (010) oriented beta-Ga2O3 substrates using in-situ reflection high energy electron diffraction measurements. Two distinct growth regimes are identified and analyzed using machine learning image recognition algorithms, the first stabilizing a streaky 2x surface reconstruction typical of In-catalyzed beta-Ga2O3 growth, and the second exhibiting a spotty/faceted pattern typical of phase separation. Targeted growth of (InxGa1-x)2O3 is performed under conditions near the boundary of the two regimes resulting in a 980 nm thick epitaxial layer with In mole fraction up to 5.6%. The cyclical growth/etch method retains the ~1 nm surface roughness of the single crystal substrate, increases experimental throughput approximately 6x, and improves single crystal substrate utilization by >40x. The high-throughput MBE method enables rapid discovery of growth regimes for ultra-wide bandgap oxide alloys for power conversion devices operating with high efficiency at high voltages and temperatures, as well as optical devices such as ultraviolet photodetectors.

AG-2024.01-2214

cond-mat.mtrl-sci

Local electronic excitations by slow light ions in tungsten

Evgeniia Ponomareva, Eduardo Pitthan, Radek Holeňák, Jila Shams-Latifi, Glen Pádraig Kiely, Daniel Primetzhofer, Andrea Sand

Accurately predicting the electronic energy deposition of ions in materials is an important challenge in both fundamental and applied research. While employing ab initio simulations to investigate electronic stopping of ions in matter holds promise, its combined use with experimental measurements paves the way for obtaining reliable data. In this paper, we present a collaborative study using real-time time-dependent density functional theory and experimental methods to determine the electronic stopping power of hydrogen and helium ions in tungsten, a primary candidate material for future nuclear fusion devices. While calculated stopping powers in hyperchanneling trajectories are significantly lower than the experimental data, off-center and random geometries demonstrate a better agreement. We show that the deviation from velocity proportionality for both projectiles traversing the hyperchanneling directions can be explained through the existence of a threshold velocity leading to the activation of semicore states. Additionally, we analyse the pseudopotential and the trajectory dependence of computed electronic energy losses. It is demonstrated that the role of including inner-shell electrons varies depending on the velocity range. While these states play a crucial role at high projectile velocities by introducing additional dissipation channels, their impact diminishes in the low-velocity range. Finally, we introduce a simple expression that links electronic energy losses in different trajectories to local electron density, and we show that utilizing this formula allows for quite accurate predictions of stopping powers around the Bragg peak.

AG-2024.01-1458

cond-mat.mtrl-sci

2024 Roadmap on Magnetic Microscopy Techniques and Their Applications in Materials Science

D. V. Christensen, U. Staub, T. R. Devidas, B. Kalisky, K. C. Nowack, J. L. Webb, U. L. Andersen, A. Huck, D. A. Broadway, K. Wagner, P. Maletinsky, T. van der Sar, C. R. Du, A. Yacoby, D. Collomb, S. Bending, A. Oral, H. J. Hug, A. -O. Mandru, V. Neu, H. W. Schumacher, S. Sievers, H. Saito, A. A. Khajetoorians, N. Hauptmann, S. Baumann, A. Eichler, C. L. Degen, J. McCord, M. Vogel, M. Fiebig, P. Fischer, A. Hierro-Rodriguez, S. Finizio, S. S. Dhesi, C. Donnelly, Felix Büttner, O. Kfir, W. Hu, S. Zayko, S. Eisebitt, B. Pfau, R. Frömter, M. Kläui, F. S. Yasin, B. J. McMorran, S. Seki, X. Yu, A. Lubk, D. Wolf, N. Pryds, D. Makarov, M. Poggio

Considering the growing interest in magnetic materials for unconventional computing, data storage, and sensor applications, there is active research not only on material synthesis but also characterisation of their properties. In addition to structural and integral magnetic characterisations, imaging of magnetization patterns, current distributions and magnetic fields at nano- and microscale is of major importance to understand the material responses and qualify them for specific applications. In this roadmap, we aim to cover a broad portfolio of techniques to perform nano- and microscale magnetic imaging using SQUIDs, spin center and Hall effect magnetometries, scanning probe microscopies, x-ray- and electron-based methods as well as magnetooptics and nanoMRI. The roadmap is aimed as a single access point of information for experts in the field as well as the young generation of students outlining prospects of the development of magnetic imaging technologies for the upcoming decade with a focus on physics, materials science, and chemistry of planar, 3D and geometrically curved objects of different material classes including 2D materials, complex oxides, semi-metals, multiferroics, skyrmions, antiferromagnets, frustrated magnets, magnetic molecules/nanoparticles, ionic conductors, superconductors, spintronic and spinorbitronic materials.

AG-2023.04-002

cond-mat.mtrl-sci

Magnetic Structures and Spin-wave Excitations in Rare-Earth Iron Garnets near the Compensation Temperature

Michiyasu Mori, Timothy Ziman

We introduce a simple model for the ferrimagnetic non-collinear ``magnetic umbrella" states of rare-earth iron garnets (REIG), common when the rare-earth moments have non-zero orbital angular momentum. The spin-wave excitations are calculated within linear spin wave theory and temperature effects via mean-field theory. This could be used to determine the magnetic polarization of each mode and thereby the spin currents generated by thermal excitations including the effects of mixed chirality. The spectra reproduce essential features seen in more complete models, with hybridization between the rare earth crystal field excitations and the propagating mode on the iron moments. By the symmetry of the model, only one rare earth mode hybridizes, inducing a gap at zero wave number and level repulsion at finite frequency. At the compensation point, the hybridization gap closes and finally, as we approach the Néel temperature, the hybridization gap appears to reopen. The chirality of the lowest mode changes its sign around the frequency at which the level repulsion occurs. This is important to estimate the spin current generation in REIGs.

AG-2015.06-1530

cond-mat.mtrl-sci

Local Aspects of Hydrogen-Induced Metallization of the ZnO(10$\mathbf{\overline{1}}$0) Surface

J. -C. Deinert, O. T. Hofmann, M. Meyer, P. Rinke, J. Stähler

This study combines surface-sensitive photoemission experiments with density functional theory (DFT) to give a microscopic description of H adsorption-induced modifications of the ZnO(10${\overline{1}}$0) surface electronic structure. We find a complex adsorption behavior caused by a strong coverage dependence of the H adsorption energies: Initially, O--H bond formation is energetically favorable and H acting as an electron donor leads to the formation of a charge accumulation layer and to surface metallization. The increase of the number of O--H bonds leads to a reversal in adsorption energies such that Zn--H bonds become favored at sites close to existing O--H bonds, which results in a gradual extenuation of the metallization. The corresponding surface potential changes are localized within a few nanometers both laterally and normal to the surface. This localized character is experimentally corroborated by using sub-surface bound excitons at the ZnO(10${\overline{1}}$0) surface as a local probe. The pronounced and comparably localized effect of small amounts of hydrogen at this surface strongly suggests metallic character of ZnO surfaces under technologically relevant conditions and may, thus, be of high importance for energy level alignment at ZnO-based junctions in general.

AG-2015.06-1532

cond-mat.mtrl-sci

Structure and dynamics of the fullerene polymer Li4 C60 studied with neutron scattering

S. Rols, D. Pontiroli, C. Cavallari, M. Gaboardi, M. Aramini, D. Richard, M. R. Johnson, J. -M. Zanotti, E. Suard, M. Maccarini, M. Ricco

The two-dimensional polymer structure and lattice dynamics of the superionic conductor Li4 C60 are investigated by neutron diffraction and spectroscopy. The peculiar bonding architecture of this compound is definitely confirmed through the precise localisation of the carbon atoms involved in the intermolecular bonds. The spectral features of this phase are revealed through ab-initio lattice dynamics calculations and inelastic neutron scattering experiments. The neutron observables are found to be in very good agreement with the simulations which predict a partial charge transfer from the Li atoms to the C60 cage. The absence of a well defined band associated to one category of the Li atoms in the experimental spectrum suggests that this species is not ordered even at the lowest temperatures. The calculations predict an unstable Li sublattice at a temperature of 200 K, that we relate to the large ionic diffusivity of this system. This specificity is discussed in terms of coupling between the low frequency optic modes of the Li ions to the soft structure of the polymer.

AG-2015.06-1555

cond-mat.mtrl-sci

Enhanced Seebeck effect in graphene devices by strain and doping engineering

Mai Chung Nguyen, Viet Hung Nguyen, Huy-Viet Nguyen, Jerome Saint-Martin, Philippe Dollfus

In this work, we investigate the possibility of enhancing the thermoelectric power (Seebeck coefficient) in graphene devices by strain and doping engineering. While a local strain can result in the misalignment of Dirac cones of different graphene sections in the k-space, doping engineering leads to their displacement in energy. By combining these two effects, we demonstrate that a conduction gap as large as a few hundreds meV can be achieved and hence the enhanced Seebeck coefficient can reach a value higher than 1.4 mV/K in graphene doped heterojunctions with a locally strained area. Such hetero-channels appear to be very promising for enlarging the applications of graphene devices as in strain and thermal sensors.

AG-2015.06-1557

cond-mat.mtrl-sci

Choice of basis vectors for conventional unit cells revisited

Yoyo Hinuma, Atsushi Togo, Hiroyuki Hayashi, Isao Tanaka

Band diagrams often pass through special $\mathbf{k}$-vector points with "irrational" fractional coordinates such as some Brillouin zone vertices and centers of edges. Use of "standard" primitive cells as defined by Setyawan and Curtarolo [Comp. Mater. Sci. 49, 299] is convenient for band diagram and effective mass calculations because the definitions and coordinates of special $\mathbf{k}$-vector points including "irrational" fractional points are provided, but their basis vectors are taken differently and/or special $\mathbf{k}$-vector point definitions differ from the crystallographic convention in many cases. On the other hand, the Bilbao Crystallographic Server [Bulg. Chem. Commun. 43, 183] defines special $\mathbf{k}$-vector points based on crystallographic convention; however, symbols for "irrational" special $\mathbf{k}$-vector points are not defined. Obviously there is a need for a crystallographic convention-friendly scheme to describe such "irrational" special $\mathbf{k}$-vector points. This paper outlines an algorithm that is relatively straightforward to implement in software to bridge between crystallographic conventional cells and "standard" primitive cells by retaking basis vectors. The procedure is expected to ease systematic electronic and phonon band calculations.

AG-2015.06-1597

cond-mat.mtrl-sci

Creep of Bulk C--S--H: Insights from Molecular Dynamics Simulations

Mathieu Bauchy, Enrico Masoero, Franz-Joseph Ulm, Roland Pellenq

Understanding the physical origin of creep in calcium--silicate--hydrate (C--S--H) is of primary importance, both for fundamental and practical interest. Here, we present a new method, based on molecular dynamics simulation, allowing us to simulate the long-term visco-elastic deformations of C--S--H. Under a given shear stress, C--S--H features a gradually increasing shear strain, which follows a logarithmic law. The computed creep modulus is found to be independent of the shear stress applied and is in excellent agreement with nanoindentation measurements, as extrapolated to zero porosity.

AG-2015.06-1598

cond-mat.mtrl-sci

Fracture Toughness of Silicate Glasses: Insights from Molecular Dynamics Simulations

Yingtian Yu, Bu Wang, Young Jea Lee, Mathieu Bauchy

Understanding, predicting and eventually improving the resistance to fracture of silicate materials is of primary importance to design new glasses that would be tougher, while retaining their transparency. However, the atomic mechanism of the fracture in amorphous silicate materials is still a topic of debate. In particular, there is some controversy about the existence of ductility at the nano-scale during the crack propagation. Here, we present simulations of the fracture of three archetypical silicate glasses using molecular dynamics. We show that the methodology that is used provide realistic values of fracture energy and toughness. In addition, the simulations clearly suggest that silicate glasses can show different degrees of ductility, depending on their composition.

AG-2015.06-1599

cond-mat.mtrl-sci

Is Cement a Glassy Material?

Mathieu Bauchy, Mohammad Javad Abdolhosseini Qomi, Franz-Joseph Ulm, Roland Pellenq

The nature of Calcium--Silicate--Hydrate (C--S--H), the binding phase of cement, remains a controversial question. In particular, contrary to the former crystalline model, it was recently proposed that its nanoscale structure was actually amorphous. To elucidate this issue, we analyzed the structure of a realistic simulation of C--S--H, and compared the latter to crystalline tobermorite, a natural analogue to cement, and to an artificial ideal glass. Results clearly support that C--S--H is amorphous. However, its structure shows an intermediate degree of order, retaining some characteristics of the crystal while acquiring an overall glass-like disorder. Thanks to a detailed quantification of order and disorder, we show that its amorphous state mainly arises from its hydration.

AG-2015.06-1600

cond-mat.mtrl-sci

Degradation by Exposure of Co-Evaporated CH3NH3PbI3 Thin Films

Youzhen Li, Xuemei Xu, Chenggong Wang, Congcong Wang, Fangyan Xie, Yongli Gao

Degradation of co-evaporated CH3NH3PbI3 thin films was investigated with x-ray photoelectron spectroscopy (XPS) and x-ray diffraction (XRD) as the films were subjected to exposure of oxygen, dry air, ambient, or H2O. The co-evaporated thin films have consistent stoichiometry and crystallinity suitable for detailed surface analysis. The results indicate that CH3NH3PbI3 is not sensitive to oxygen. Even after 10^13 Langmuire (L, one L equals 10^-6 torr sec) oxygen exposure, no O atoms could be found on the surface. The film is not sensitive to dry air as well. A reaction threshold of about 2*10^10 L is found for H2O exposure, below which no CH3NH3PbI3 degradation takes place and the H2O acts as an n-dopant. Above the threshold, the film begins to decompose, and the amount of N and I decrease quickly, leaving the surface with PbI2, amorphous C and O contamination.

AG-2015.06-1605

cond-mat.mtrl-sci

Topological Constraints and Rigidity of Network Glasses from Molecular Dynamics Simulations

Mathieu Bauchy

Due to its non-crystalline nature, the glassy state has remained one the most exciting scientific challenges. To study such materials, Molecular Dynamics (MD) simulations have been extensively used because they provide a direct view into its microscopic structure. MD is therefore used not only to reproduce real system properties but also benefits from detailed atomic scale analysis. Unfortunately, MD shows inherent limitations because of the limited computational power. For instance, only the simulations of small systems are currently permitted, which prevents from studying small compositional changes, although it is well known that they can dramatically alter system properties. At this stage, it is tempting to follow topological constraint theory, which aims at describing macroscopic properties of the glass relying only on the connectivity of individual atoms, thus considering the complicated glass network as simple mechanical trusses. Thanks to only basic hand calculations, this theory has been successful in predicting complex composition and temperature behavior of glass properties, such as the glass forming ability, the viscosity of the corresponding liquid or the elasticity. The purpose of my PhD work is to connect these successful approaches based only on the topology of the underlying low-temperature network with properties that can be obtained from MD calculations. It should thus allow for an increased applicability of rigidity theory.

AG-2015.06-1585

cond-mat.mtrl-sci

NMR study of native defects in PbSe

Dimitrios Koumoulis, Robert E. Taylor, Danny King, Louis-S. Bouchard

While each atom species in PbSe corresponds to a single crystallographic site and transport measurements reveal a single carrier density, $^{207}$Pb NMR reveals a more complicated picture than previously thought comprising three discrete homogeneous carrier components, each associated with $n$- or $p$-type carrier fractions. The origins of these fractions are discussed in terms of electronic heterogeneity of the native semiconductor. The interaction mechanism between nuclear spins and lattice vibrations via fluctuating spin-rotation interaction, applicable to heavy spin-1/2 nuclei [Phys. Rev. B 74, 214420 (2006)], does not hold. Instead, a higher-order temperature dependence dominates the relaxation pathway. Shallow acceptor states and deep level defects in the midgap explain the complex temperature dependence of the direct band gap.

AG-2015.06-1586

cond-mat.mtrl-sci

Understanding Bulk Defects in Topological Insulators from Nuclear-Spin Interactions

Dimitrios Koumoulis, Belinda Leung, Thomas C. Chasapis, Robert Taylor, Daniel King, Mercouri G. Kanatzidis, Louis-S. Bouchard

Non-invasive local probes are needed to characterize bulk defects in binary and ternary chalcogenides. These defects contribute to the non-ideal behavior of topological insulators. We have studied bulk electronic properties via $^{125}$Te NMR in Bi$_2$Te$_3$, Sb$_2$Te$_3$, Bi$_{0.5}$Sb$_{1.5}$Te$_3$, Bi$_2$Te$_2$Se and Bi$_2$Te$_2$S. A distribution of defects gives rise to asymmetry in the powder lineshapes. We show how the Knight shift, line shape and spin-lattice relaxation report on carrier density, spin-orbit coupling and phase separation in the bulk. The present study confirms that the ordered ternary compound Bi$_2$Te$_2$Se is the best TI candidate material at the present time. Our results, which are in good agreement with transport and ARPES studies, help establish the NMR probe as a valuable method to characterize the bulk properties of these materials.

AG-2015.06-1588

cond-mat.mtrl-sci

A combined NMR and DFT study of Narrow Gap Semiconductors: The case of PbTe

Robert E. Taylor, Fahri Alkan, Dimitrios Koumoulis, Michael P. Lake, Daniel King, Cecil Dybowski, Louis-S. Bouchard

In this study we present an alternative approach to separating contributions to the NMR shift originating from the Knight shift and chemical shielding by a combination of experimental solid-state NMR results and ab initio calculations. The chemical and Knight shifts are normally distinguished through detailed studies of the resonance frequency as function of temperature and carrier concentration, followed by extrapolation of the shift to zero carrier concentration. This approach is time-consuming and requires studies of multiple samples. Here, we analyzed $^{207}$Pb and $^{125}$Te NMR spin-lattice relaxation rates and NMR shifts for bulk and nanoscale PbTe. The shifts are compared with calculations of the $^{207}$Pb and $^{125}$Te chemical shift resonances to determine the chemical shift at zero charge carrier concentration. The results are in good agreement with literature values from carrier concentration-dependent studies. The measurements are also compared to literature reports of the $^{207}$Pb and $^{125}$Te Knight shifts of $n$- and $p$-type PbTe semiconductors. The literature data have been converted to the currently accepted shift scale. We also provide possible evidence for the "self-cleaning effect" property of PbTe nanocrystals whereby defects are removed from the core of the particles, while preserving the crystal structure.

AG-2015.06-1589

cond-mat.mtrl-sci

Spin-lattice relaxation in bismuth chalcogenides

Robert E. Taylor, Belinda Leung, Michael P. Lake, Louis-S. Bouchard

Bismuth chalcogenides Bi$_2$Se$_3$ and Bi$_2$Te$_3$ are semiconductors, which can be both thermoelectric materials (TE) and topological insulators (TI). Lattice defects arising from vacancies, impurities, or dopants in these materials are important in that they provide the charge carriers in TE applications and compromise the performance of these materials as TIs. We present the first solid-state nuclear magnetic resonance (NMR) study of the $^{77}$Se and $^{125}$Te NMR resonances in polycrystalline powders of Bi$_2$Se$_3$ and Bi$_2$Te$_3$, respectively. The spin-lattice ($T_1$) relaxation is modeled by at most two exponentials. Within the framework of this model, the NMR measurement is sensitive to the distribution of native defects within these materials. One component corresponds to a stoichiometric fraction, an insulator with a very long $T_1$, whereas the other component is attributed to a sample fraction with high defect content with a short $T_1$ resulting from interaction with the conduction carriers. The absence of a very long $T_1$ in the bismuth telluride suggests defects throughout the sample. For the bismuth selenide, defect regions segregate into domains. We also find a substantial difference in the short $T_1$ component for $^{125}$Te nuclei (76 ms) and $^{77}$Se (0.63 s) in spite of the fact that these materials have nearly identical lattice structures, chemical and physical properties. Investigations of the NMR shift and Korringa law indicate that the coupling to the conduction band electrons at the chalcogenide sites is much stronger in the telluride. The results are consistent with a stronger spin-orbit coupling (SOC) to the $p$-band electrons in the telluride. If most parameters of a given material are kept equal, this type of experiment could provide a useful probe of SOC in engineered TI materials.

AG-2015.06-1554

cond-mat.mtrl-sci

Extremely high negative electron affinity of diamond via magnesium adsorption

Kane M. O'Donnell, Mark T. Edmonds, Anton Tadich, Lars Thomsen, Alastair Stacey, Alex Schenk, Chris I. Pakes, Lothar Ley

We report large negative electron affinity (NEA) on diamond (100) using magnesium adsorption on a previously oxygen-terminated surface. The measured NEA is up to $(-2.01\pm0.05)$ eV, the largest reported negative electron affinity to date. Despite the expected close relationship between the surface chemistry of Mg and Li species on oxygen-terminated diamond, we observe differences in the adsorption properties between the two. Most importantly, a high-temperature annealing step is not required to activate the Mg-adsorbed surface to a state of negative electron affinity. Diamond surfaces prepared by this procedure continue to possess negative electron affinity after exposure to high temperatures, air and even immersion in water.

AG-2015.06-1451

cond-mat.mtrl-sci

Simulating nanoscale heat transport

Giuseppe Romano, Jean-Philippe Peraud, Jeffrey C. Grossman

In this book chapter we provide the definition of "Simulating Nanoscale Heat Transport", broadly regarded as modeling heat conduction beyond Fourier's law. We primarely focus on incoherent transport, which is dominated by scattering between phonons and the boundaries of a given material. After introducing the Boltzmann Transport Equation (BTE) for phonons, we elaborate on different numerical techniques for solving nanoscale heat transport includind deterministic and Monte Carlo based method. A discussion on the need for multiscale modeling concludes the chapter.

AG-2015.06-1457

cond-mat.mtrl-sci

Nanostructured ZnO films: a study of molecular influence on transport properties by impedance spectroscopy

Luciano D. Sappia, Matias R. Trujillo, Israel Lorite, Rossana E. Madrid, Monica Tirado, David Comedi, Pablo Esquinazi

Nanomaterials based on ZnO have been used to build glucose sensors due to its high isoelectric point, which is important when a protein like glucose oxidase (GOx) is attached to a surface. It also creates a biologically friendly environment to preserve the activity of the enzyme. In this work we study the electrical transport properties of ZnO thin films (TFs) and single crystals (SC) in contact with different solutions by using impedance spectroscopy. We have found that the composition of the liquid, by means of the charge of the ions, produces strong changes in the transport properties of the TF. The enzyme GOx and phosphate buffer solutions have the major effect in the conduction through the films, which can be explained by the entrapment of carriers at the grain boundaries of the TFs. These results can help to design a new concept in glucose biosensing.

AG-2015.06-1473

cond-mat.mtrl-sci

Domain wall pinning and interaction in rough cylindrical nanowires

Voicu O. Dolocan

Interactions between pairs of magnetic domain walls (DW) and pinning by radial constrictions were studied in cylindrical nanowires with surface roughness. It was found that a radial constriction creates a symmetric pinning potential well, with a change of slope when the DW is situated outside the notch. Surface deformation induces an asymmetry in the pinning potential as well as dynamical pinning. The depinning fields of the domain walls were found generally to decrease with increasing surface roughness. A DW pinned at a radial constriction creates a pinning potential well for a free DW in a parallel wire. We determined that trapped bound DW states appear above the depinning threshold and that the surface roughness facilitates the trapped bound DW states in parallel wires.

AG-2015.06-1489

cond-mat.mtrl-sci

Comments on the paper Growth and Characterization of Pure and Thiourea-Doped L-Alanine Single Crystals for NLO Devices

Bikshandarkoil R. Srinivasan, S. Natarajan

we show that the pure and thiourea-doped glycyl-L-alanine hydrochloride (GLAH and TU-GLAH) crystals claimed to have been grown by the authors of the title paper (Journal of Russian Laser Research, 34, 346-350 (2013)) are dubious crystals.

AG-2015.06-1375

cond-mat.mtrl-sci

Evidence for the Active Phase of Heterogeneous Catalysts through In Situ Reaction Product Imaging and Multiscale Modeling

S. Matera, S. Blomberg, M. J. Hoffmann, J. Zetterberg, J. Gustafson, E. Lundgren, K. Reuter

We use multi-scale modeling to analyze laser-induced fluorescence (LIF) measurements of the CO oxidation reaction over Pd(100) at near-ambient reaction conditions. Integrating density-functional theory based kinetic Monte Carlo simulations of the active catalyst into fluid-dynamical simulations of the mass transport inside the reactor chamber we calculate the reaction product concentration directly above the catalyst surface. Comparing corresponding data calculated for different surface models against the measured LIF signals we can discriminate the one that predominantly actuates the experimentally measured catalytic activity. For the probed CO oxidation reaction conditions the experimental activity is due to pristine Pd(100), possibly coexisting with other (oxidic) domains on the surface.

AG-2015.06-1376

cond-mat.mtrl-sci

Phosphorene: Fabrication, Properties and Applications

Liangzhi Kou, Changfeng Chen, Sean C. Smith

Phosphorene, the single- or few-layer form of black phosphorus, was recently rediscovered as a twodimensional layered material holding great promise for applications in electronics and optoelectronics. Research into its fundamental properties and device applications has since seen exponential growth. In this Perspective, we review recent progress in phosphorene research, touching upon topics on fabrication, properties, and applications; we also discuss challenges and future research directions. We highlight the intrinsically anisotropic electronic, transport, optoelectronic, thermoelectric, and mechanical properties of phosphorene resulting from its puckered structure in contrast to those of graphene and transition-metal dichalcogenides. The facile fabrication and novel properties of phosphorene have inspired design and demonstration of new nanodevices; however, further progress hinges on resolutions to technical obstructions like surface degradation effects and non-scalable fabrication techniques. We also briefly describe the latest developments of more sophisticated design concepts and implementation schemes that address some of the challenges in phosphorene research. It is expected that this fascinating material will continue to offer tremendous opportunities for research and development for the foreseeable future.

AG-2015.06-1372

cond-mat.mtrl-sci

Two Band Model Interpretation of the p to n Transition in Ternary Tetradymite Topological Insulators

T. C. Chasapis, D. Koumoulis, B. Leung, N. P. Calta, S. -H Lo, V. P. Dravid, L. S. Bouchard, M. G. Kanatzidis

The requirement for large bulk resistivity in topological insulators has led to the design of complex ternary and quaternary phases with balanced donor and acceptor levels. A common feature of the optimized phases is that they lie close to the p to n transition. The tetradymite Bi2Te3_xSex system exhibits minimum bulk conductance at the ordered composition Bi2Te2Se. By combining local and integral measurements of the density of states, we find that the point of minimum electrical conductivity at x=1.0 where carriers change from hole-like to electron-like is characterized by conductivity of the mixed type. Our experimental findings, which are interpreted within the framework of a two band model for the different carrier types, indicate that the mixed state originates from different type of native defects that strongly compensate at the crossover point.

AG-2015.06-1392

cond-mat.mtrl-sci

Dispersive read-out of ferromagnetic resonance for strongly coupled magnons and microwave photons

J. A. Haigh, N. J. Lambert, A. C. Doherty, A. J. Ferguson

We demonstrate the dispersive measurement of ferromagnetic resonance in a yttrium iron garnet sphere embedded within a microwave cavity. The reduction in the longitudinal magnetization at resonance is measured as a frequency shift in the cavity mode coupled to the sphere. This measurement is a result of the intrinsic non-linearity in magnetization dynamics, indicating a promising route towards experiments in magnon cavity quantum electro-dynamics.

AG-2015.06-1398

cond-mat.mtrl-sci

Crystal and electronic structure of BiTeI, AuTeI, and PdTeI compounds: A dispersion-corrected density-functional study

Sümeyra Güler-Kılıç, Çetin Kılıç

Semilocal and dispersion-corrected density-functional calculations have been performed to study the crystal structure, equation of state, and electronic structure of metal tellurohalides with chemical formula MeTeI where Me=Bi, Au, or Pd. A comparative investigation of the results of these calculations is conducted which reveals the role of van der Waals attraction. It is shown that the prediction of crystal structure of metal tellurohalides is systematically improved thanks to the inclusion of van der Waals dispersion. It is found for BiTeI and AuTeI that the energy versus volume curve is anomalously flat in the vicinity of equilibrium volume and the calculated equation of state has an excessively steep slope in the low-pressure region; these are also fixed in the dispersion-corrected calculations. Analysis based on the computation of the volume and axial compressibilities shows that predicting the anisotropy of BiTeI via the semilocal calculations yields an unrealistic result, whereas the results of dispersion-corrected calculations agree with the experimental compressibility data. Our calculations render that BiTeI (AuTeI) is a narrow band gap semiconductor with Rashba-type spin splitting at the band edges (with an indirect band gap) while PdTeI is a metal with relatively low density of states at the Fermi level. The band gaps of BiTeI and AuTeI obtained via semilocal (dispersion-corrected) calculations are found to be greater (smaller) than the respective experimental values, which is against (in line with) the expected trend. Similarly, the Rashba parameters of BiTeI are bracketed by the respective values obtained via semilocal and dispersion-corrected calculations. Excellent agreement with the experimental Rashba parameters is obtained via interpolation of the calculated (semilocal and dispersion-corrected) values.

AG-2015.06-1219

cond-mat.mtrl-sci

Understanding Adsorption-Induced Structural Transitions in Metal-Organic Frameworks: From the Unit Cell to the Crystal

Carles Triguero, François-Xavier Coudert, Anne Boutin, Alain H. Fuchs, Alexander V. Neimark

Breathing transitions represent recently discovered adsorption-induced structural transformations between large-pore and narrow-pore conformations in bistable metal-organic frameworks, such as MIL-53. We present a multiscale physical mechanism of the dynamics of breathing transitions. We show that due to interplay between host framework elasticity and guest molecule adsorption, these transformations on the crystal level occur via layer-by-layer shear. We construct a simple Hamiltonian that describes the physics of host-host and host-guest interactions on the level of unit cells and reduces to one effective dimension due to the long-range elastic cell-cell interactions. We then use this Hamiltonian in Monte Carlo simulations of adsorption-desorption cycles to study how the behavior of unit cells is linked to the transition mechanism at the crystal level through three key physical parameters: the transition energy barrier, the cell-cell elastic coupling, and the system size.

AG-2015.06-1278

cond-mat.mtrl-sci

Halogenation Thermodynamics of Pyrrolidinium-Based Ionic Liquids

Vitaly Chaban

Room-temperature ionic liquids (RTILs) exhibit large difference between melting and boiling points. They are highly tunable thanks to numerous accessible combinations of the cation and the anion. On top of that, cations can be functionalized using methods of organic chemistry. This paper reports gas-phase thermodynamics (enthalpy, entropy, Gibbs free energy) of the halogenation reactions (fluorination, chlorination, bromination) involving protonated pyrrolidine C4H10N+, protic N-ethylpyrrolidinium C4H9N(C2H5)+, and aprotic N-ethyl-N-methylpyrrolidinium C4H8N(CH3)(C2H5)+ cations. Substitution of all symmetrically non-equivalent hydrogen atoms was compared based of the thermodynamic favorability. Fluorination of all sites is much more favorable than chlorination, whereas chlorination is somewhat more favorable than bromination. This is not trivial, since electronegative fluorine and chlorine have to compete for the already insufficient number of electrons with other atoms belonging to the pyrrolidinium-based cations. The difference between different reaction sites within the cations is modest, although it often exceeds kT at simulated temperatures. The correlation between thermodynamics and electronic density distribution has been established, which allows new simple prediction of the reaction pathways. The reported results inspire further chemical modifications of the pyrrolidinium-based RTILs to achieve ever finer tunability of physical chemical properties.

AG-2015.06-1134

cond-mat.mtrl-sci

Few-Layer C2N: A Promising Metal-free Photocatalyst for Water Splitting

Ruiqi Zhang, Jinlong Yang

Successful synthesis of the nitrogenated holey two-dimensional structures C2N (Nat. Commun. 2015, 6, 6486) using simply wet-chemical reaction offer a cost-effective way to generate other 2D materials with novel optical and electronic properties. On basis of the density functional theory calculations, we investigate electronic properties of monolayer and multilayer C2N. We find that few-layer C2N have a direct bandgap and the direct bandgap of the system can vary from 2.47 eV for monolayer to 1.84 eV for a five-layer. Besides, for the few-layer C2N, appropriate band gap, band edge alignments, and strong visible-light absorption demonstrate it may be a potential metal-free visible-light driven photocatalyst for water splitting.

AG-2015.06-1150

cond-mat.mtrl-sci

Correlation of Crystal Quality and Extreme Magnetoresistance of WTe$_2$

Mazhar N. Ali, Leslie Schoop, Jun Xiong, Steven Flynn, Quinn Gibson, Max Hirschberger, N. P. Ong, R. J. Cava

High quality single crystals of WTe$_2$ were grown using a Te flux followed by a cleaning step involving self-vapor transport. The method is reproducible and yields consistently higher quality single crystals than are typically obtained via halide assisted vapor transport methods. Magnetoresistance (MR)values at 9 Tesla and 2 Kelvin as high as 1.75 million \%, nearly an order of magnitude higher than previously reported for this material, were obtained on crystals with residual resistivity ratio (RRR) of approximately 1250. The MR follows a near B$^2$ law (B = 1.95(1)) and, assuming a semiclassical model, the average carrier mobility for the highest quality crystal was found to be ~167,000 cm$^2$/Vs at 2 K. A correlation of RRR, MR ratio and average carrier mobility ($μ_{avg}$) is found with the cooling rate during the flux growth.

AG-2015.06-1156

cond-mat.mtrl-sci

Unforeseen high temperature and humidity stability of FeCl$_3$ intercalated few layer graphene

D. J. Wehenkel, T. H. Bointon, T. Booth, P. Boggild, M. F. Craciun, S. Russo

We present the first systematic study of the stability of the structure and electrical properties of FeCl$_3$ intercalated few-layer graphene to high levels of humidity and high temperature. Complementary experimental techniques such as electrical transport, high resolution transmission electron microscopy and Raman spectroscopy conclusively demonstrate the unforeseen stability of this transparent conductor to a relative humidity up to $100 \%$ at room temperature for 25 days, to a temperature up to $150\,^\circ$C in atmosphere and up to a temperature as high as $620\,^\circ$C in vacuum, that is more than twice higher than the temperature at which the intercalation is conducted. The stability of FeCl$_3$ intercalated few-layer graphene together with its unique values of low square resistance and high optical transparency, makes this material an attractive transparent conductor in future flexible electronic applications.

AG-2015.06-1209

cond-mat.mtrl-sci

Step Growth and Meandering in a Precursor-Mediated Epitaxy with Anisotropic Attachment Kinetics and Terrace Diffusion

Mikhail Khenner

Step meandering instability in a Burton-Cabrera-Frank (BCF)-type model for the growth of an isolated, atomically high step on a crystal surface is analyzed. It is assumed that the growth is sustained by the molecular precursors deposition on a terrace and their decomposition into atomic constituents; both processes are explicitly modeled. A strongly nonlinear evolution PDE for the shape of the step is derived in the long-wave limit and without assuming smallness of the amplitude; this equation may be transformed into a convective Cahn-Hilliard-type PDE for the step slope. Meandering is studied as a function of the precursors diffusivity and of the desorption rates of the precursors and adatoms. Several important features are identified, such as: the interrupted coarsening, "facet" bunching, and the lateral drift of the step perturbations (a traveling wave) when the terrace diffusion is anisotropic. The nonlinear drift introduces a disorder into the evolution of a step meander, which results in a pronounced oscillation of the step velocity, meander amplitude and lateral length scale in the steady-state that emerged after the coarsening was interrupted. The mean values of these characteristics are also strongly affected by the drift. Keywords: epitaxial crystal growth; step flow; meandering instability; molecular precursors; anisotropic diffusion; nonlinear pde model; convective Cahn-Hilliard equation

AG-2015.06-1210

cond-mat.mtrl-sci

Electromigration-driven Evolution of the Surface Morphology and Composition for a Bi-Component Solid Film

Mikhail Khenner, Mahdi Bandegi

A two PDEs-based model is developed for studies of a morphological and compositional evolution of a thermodynamically stable alloy surface in a strong electric field, assuming different and anisotropic diffusional mobilities of the two atomic components. The linear stability analysis of a planar surface and the computations of morphology coarsening are performed. It is shown that the conditions for instability and the characteristic wavelength and growth rate differ from their counterparts in a single-component film. Computational parametric analyses reveal the sensitivity of the scaling exponents to the electric field strength and to the magnitude of the anisotropies difference.

AG-2015.06-1089

cond-mat.mtrl-sci

Comparing quasiparticle H$_2$O level alignment on anatase and rutile TiO$_2$

Huijuan Sun, Duncan J. Mowbray, Annapaola Migani, Jin Zhao, Hrvoje Petek, Angel Rubio

Knowledge of the molecular frontier levels' alignment in the ground state can be used to predict the photocatalytic activity of an interface. The position of the adsorbate's highest occupied molecular orbital (HOMO) levels relative to the substrate's valence band maximum (VBM) in the interface describes the favorability of photogenerated hole transfer from the VBM to the adsorbed molecule. This is a key quantity for assessing and comparing H$_2$O photooxidation activities on two prototypical photocatalytic TiO$_2$ surfaces: anatase (A)-TiO$_2$(101) and rutile (R)-TiO$_2$(110). Using the projected density of states (DOS) from state-of-the-art quasiparticle (QP) $G_0W_0$ calculations, we assess the relative photocatalytic activity of intact and dissociated H$_2$O on coordinately unsaturated (Ti$_{\textit{cus}}$) sites of idealized stoichiometric A-TiO$_2$(101)/R-TiO$_2$(110) and bridging O vacancies (O$_{\textit{br}}^{\textit{vac}}$) of defective A-TiO$_{2-x}$(101)/R-TiO$_{2-x}$(110) surfaces ($x=\frac{1}{4},\frac{1}{8}$) for various coverages. Such a many-body treatment is necessary to correctly describe the anisotropic screening of electron-electron interactions at a photocatalytic interface, and hence obtain accurate interfacial level alignments. The more favorable ground state HOMO level alignment for A-TiO$_2$(101) may explain why the anatase polymorph shows higher photocatalytic activities than the rutile polymorph. Our results indicate that (1) hole trapping is more favored on A-TiO$_2$(101) than R-TiO$_2$(110) and (2) HO@Ti$_{\textit{cus}}$ is more photocatalytically active than intact H$_2$O@Ti$_{\textit{cus}}$.

AG-2015.06-1061

cond-mat.mtrl-sci

Sculpting the band gap: a computational approach

Kiran Prasai, Parthapratim Biswas, D. A. Drabold

Materials with optimized band gap are needed in many specialized applications. In this work, we demonstrate that Hellmann-Feynman forces associated with the gap states can be used to find atomic coordinates with a desired electronic density of states. Using tight-binding models, we show that this approach can be used to arrive at electronically designed models of amorphous silicon and carbon. We provide a simple recipe to include a priori electronic information in the formation of computer models of materials, and prove that this information may have profound structural consequences. An additional example of a graphene nanoribbon is provided to demonstrate the applicability of this approach to engineer 2-dimensional materials. The models are validated with plane-wave density functional calculations.

AG-2015.06-1038

cond-mat.mtrl-sci

Comments on the paper: Structural, optical properties and effect of amino acid on growth of KDP crystals

Bikshandarkoil R. Srinivasan, K. R. Priolkar

The L-arginine mixed potassium dihydrogenphosphate (KDP) crystal reported by Saravanan et al Indian J Pure App Phys 51 (2013) 254, is a dubious crystal. The reported unit cell parameters contradict the definition of the tetragonal crystal system.

AG-2015.06-1054

cond-mat.mtrl-sci

On the existence of ethylenediaminetetraacetic acid (EDTA) doped zinc sulphate heptahydrate crystal

Bikshandarkoil R. Srinivasan

It is argued that the ethylenediaminetetraacetic acid (EDTA) doped zinc sulphate heptahydrate crystal reported by Raja et al Spectrochim Acta 99A (2012) 23 is the well known zinc sulphate heptahydrate.

AG-2015.06-877

cond-mat.mtrl-sci

A new kinetic model for precipitation from solid solutions

O. Borysenko

This model considers reversible elementary acts of migration of point defects (interstitials and/or vacancies) across the precipitate-matrix interface and enables one to derive equations for the rates of emission and absorption of solute atoms at the interface. The model predicts much stronger heterophase fluctuations and higher nucleation rates than the classical nucleation theory does. However, asymptotically, for large precipitate sizes and long ageing times, both models give the same results, being in agreement with the Lifshitz-Slyozov-Wagner theory of coarsening.

AG-2015.06-900

cond-mat.mtrl-sci

High Quality Yttrium Iron Garnet Grown by Room Temperature Pulsed Laser Deposition and Subsequent Annealing

C. Hauser, T. Richter, N. Homonnay, C. Eisenschmidt, H. Deniz, D. Hesse, S. Ebbinghaus, G. Schmidt

We have investigated recrystallization of amorphous Yttrium Iron Garnet (YIG) by annealing in oxygen atmosphere. Our findings show that well below the melting temperature the material transforms into a fully epitaxial layer with exceptional quality, both structural and magnetic.\\ In ferromagnetic resonance (FMR) ultra low damping and extremely narrow linewidth can be observed. For a 56 nm thick layer a damping constant of $α$=(6.63$\pm$1.50)$\cdot$10$^{-5}$ is found and the linewidth at 9.6 GHz is as small as 1.30$\pm$0.05 Oe which are the lowest values for PLD grown thin films reported so far. Even for a 20 nm thick layer a damping constant of $α$=(7.51$\pm$1.40)$\cdot$10$^{-5}$ is found which is the lowest value for ultrathin films published so far. The FMR linewidth in this case is 3.49$\pm$0.10 Oe at 9.6 GHz. Our results not only present a method of depositing thin film YIG of unprecedented quality but also open up new options for the fabrication of thin film complex oxides or even other crystalline materials.

AG-2015.06-909

cond-mat.mtrl-sci

Real-space formulation of orbital-free density functional theory using finite-element discretization: The case for Al, Mg, and Al-Mg intermetallics

Sambit Das, Mrinal Iyer, Vikram Gavini

We propose a local real-space formulation for orbital-free DFT with density dependent kinetic energy functionals and a unified variational framework for computing the configurational forces associated with geometry optimization of both internal atomic positions as well as the cell geometry. The proposed real-space formulation, which involves a reformulation of the extended interactions in electrostatic and kinetic energy functionals as local variational problems in auxiliary potential fields, also readily extends to all-electron orbital-free DFT calculations that are employed in warm dense matter calculations. We use the local real-space formulation in conjunction with higher-order finite-element discretization to demonstrate the accuracy of orbital-free DFT and the proposed formalism for the Al-Mg materials system, where we obtain good agreement with Kohn-Sham DFT calculations on a wide range of properties and benchmark calculations. Finally, we investigate the cell-size effects in the electronic structure of point defects, in particular a mono-vacancy in Al. We unambiguously demonstrate that the cell-size effects observed from vacancy formation energies computed using periodic boundary conditions underestimate the extent of the electronic structure perturbations created by the defect. On the contrary, the bulk Dirichlet boundary conditions, accessible only through the proposed real-space formulation, which correspond to an isolated defect embedded in the bulk, show cell-size effects in the defect formation energy that are commensurate with the perturbations in the electronic structure. Our studies suggest that even for a simple defect like a vacancy in Al, we require cell-sizes of $\sim 10^3$ atoms for convergence in the electronic structure.

AG-2015.06-913

cond-mat.mtrl-sci

III-V/Si Wafer Bonding Using Transparent, Conductive Oxide Interlayers

Adele C. Tamboli, Maikel F. A. M. van Hest, Myles A. Steiner, Stephanie Essig, Emmett E. Perl, Andrew G. Norman, Nick Bosco, Paul Stradins

We present a method for low temperature plasma-activated direct wafer bonding of III-V materials to Si using a transparent, conductive indium zinc oxide interlayer. The transparent, conductive oxide (TCO) layer provides excellent optical transmission as well as electrical conduction, suggesting suitability for Si/III-V hybrid devices including Si-based tandem solar cells. For bonding temperatures ranging from 100$^{\circ}$C to 350$^{\circ}$C, Ohmic behavior is observed in the sample stacks, with specific contact resistivity below 1 $Ω$cm$^2$ for samples bonded at 200$^{\circ}$C. Optical absorption measurements show minimal parasitic light absorption, which is limited by the III-V interlayers necessary for Ohmic contact formation to TCOs. These results are promising for Ga$_{0.5}$In$_{0.5}$P/Si tandem solar cells operating at one sun or low concentration conditions.

AG-2015.06-935

cond-mat.mtrl-sci

Theory of water desalination by porous electrodes with fixed chemical charge

P. M. Biesheuvel, M. E. Suss, H. V. M. Hamelers

Water desalination by capacitive deionization (CDI) is performed via electrochemical cells consisting of two porous carbon electrodes. Upon transferring charge from one electrode to the other, ions are removed from the feedwater by electrosorption into electrical double layers (EDLs) within the micropores of the porous carbon. When using electrodes containing fixed chemical charge in the micropores, various counterintuitive observations have been made, such as "inverted CDI" where upon charging, ions are released from the electrode, and the feedwater is only desalinated when the cell is discharging. We set up an EDL model including chemical charge that explains these observations and makes predictions for a working range of enhanced desalination by CDI.

AG-2015.06-943

cond-mat.mtrl-sci

Ab initio study of structural, electronic, and thermal properties of Ir$_{1-x}$Rh$_{x}$ alloys

S. Ahmed, M. Zafar, M. Shakil, M. A. Choudhary

The structural, electronic, mechanical and thermal properties of Ir$_{1-x}$Rh$_{x}$ alloys were studied systematically using ab initio density functional theory at different concentrations (x = 0.00, 0.25, 0.50, 0.75, 1.00). A Special Quasirandom Structure method was used to make alloys having FCC structure with four atoms per unit cell. The ground state properties such as lattice constant and bulk modulus were calculated to find the equilibrium atomic position for stable alloys. The calculated ground state properties are in good agreement with the experimental and previously presented other theoretical data. The electronic band structure and density of states were calculated to study the electronic properties for these alloys at different concentrations. The electronic properties substantiate the metallic behavior of alloys. The first principle density functional perturbation theory as implemented in quasiharmonic approximation was used for the calculation of thermal properties. We have calculated the thermal properties such as Debye temperatures, vibration energy, entropy, constant-volume specific heat and internal energy. The ab initio linear-response method was used to calculate phonon densities of states.

AG-2015.06-945

cond-mat.mtrl-sci

Theoretical studies of the optical and EPR spectra for VO$^{2+}$ in Na$_{3}$C$_{6}$H$_{5}$O$_{7}\cdot 2$H$_{2}$O single crystal

C. Y. Li, G. X. Wang, X. M. Zheng

On the basis of the perturbation formulas for a $d^{1}$ configuration ion in a tetragonal crystal field, the three optical absorption bands and electron paramagnetic resonance (EPR) parameters ($g$ factors $g_{i}$ and hyperfine structure constants $A_{i}$ for $i = \|$ and $\perp$, respectively) of VO$^{2+}$ in Na$_{3}$C$_{6}$H$_{5}$O$_{7}\cdot2$H$_{2}$O single crystals were studied using the perturbation theory method. By simulating the calculated optical and EPR spectra to the observed values, local structure parameters and negative signs of the hyperfine structure constants $A_{i}$ of the octahedral (VO$_{6}$)$^{8-}$ cluster in trisodium citrate dehydrate single crystal can be obtained.

AG-2015.06-946

cond-mat.mtrl-sci

Electron-acoustic phonon field induced tunnel scattering

S. V. Melkonyan, A. L. Harutyunyan, T. A. Zalinyan

Theory of electron-acoustic single phonon scattering has been reconsidered. It is assumed that the non-degenerate semiconductor has a spherical parabolic band structure. In the basis of the reconsideration there is a phenomenon of the tilting of semiconductor bands by the perturbing potential of an electric field. In this case, electron eigenfunctions are not plane waves or Bloch functions. In low-field regime, the expressions for electron intraband transition probability and scattering time are obtained under elastic collision approximation. Dependencies of scattering time on electron energy and uniform electric field are analyzed. The results of corresponding numerical computations for n-Si at 300 K are presented. It is established that there is no fracture on the curve of electron scattering time dependence on the electron energy.

AG-2015.06-950

cond-mat.mtrl-sci

Fabricating Superconducting Interfaces between Artificially-Grown LaAlO$_3$ and SrTiO$_3$ Thin Films

Danfeng Li, Stefano Gariglio, Claudia Cancellieri, Alexandre Fête, Daniela Stornaiuolo, Jean-Marc Triscone

Realization of a fully metallic two-dimensional electron gas at the interface between artificially-grown LaAlO$_3$ and SrTiO$_3$ thin films has been an exciting challenge. Here we present for the first time the successful realization of a superconducting 2DEG at interfaces between artificially-grown LaAlO$_3$ and SrTiO$_3$ thin films. Our results highlight the importance of two factors-the growth temperature and the SrTiO$_3$ termination. We use local friction force microscopy and transport measurements to determine that in normal growth conditions the absence of a robust metallic state at low temperature in the artificially-grown LaAlO$_3$/SrTiO$_3$ interface is due to the nanoscale SrO segregation occurring on the SrTiO$_3$ film surface during the growth and the associated defects in the SrTiO$_3$ film. By adopting an extremely high SrTiO$_3$ growth temperature, we demonstrate a way to realize metallic, down to the lowest temperature, and superconducting 2DEG at interfaces between LaAlO$_3$ layers and artificially-grown SrTiO$_3$ thin films. This study paves the way to the realization of functional LaAlO$_3$/SrTiO$_3$ superlattices and/or artificial LaAlO$_3$/SrTiO$_3$ interfaces on other substrates.

AG-2015.06-810

cond-mat.mtrl-sci

Transient reflectance of photoexcited Cd$_3$As$_2$

C. P. Weber, Ernest Arushanov, Bryan S. Berggren, Tahereh Hosseini, Nikolai Kouklin, Alex Nateprov

We report ultrafast transient-grating measurements of crystals of the three-dimensional Dirac semimetal cadmium arsenide, Cd3As2, at both room temperature and 80 K. After photoexcitation with 1.5-eV photons, charge-carriers relax by two processes, one of duration 500 fs and the other of duration 3.1 ps. By measuring the complex phase of the change in reflectance, we determine that the faster signal corresponds to a decrease in absorption, and the slower signal to a decrease in the light's phase velocity, at the probe energy. We attribute these signals to electrons' filling of phase space, first near the photon energy and later at lower energy. We attribute their decay to cooling by rapid emission of optical phonons, then slower emission of acoustic phonons. We also present evidence that both the electrons and the lattice are strongly heated.

AG-2015.06-832

cond-mat.mtrl-sci

Atomistic study on the cross-slip process of a screw <a> dislocation in magnesium

M. Itakura, H. Kaburaki, M. Yamaguchi, T. Tsuru

The cross-slip process of a screw $<$a$>$ dislocation from the basal to the prismatic plane in magnesium was studied using the density functional theory and the molecular dynamics calculations. An atomistic method for calculating the total Peierls energy map has been devised to track the transition path of a dissociated and/or constricted screw $<$a$>$ dislocation in the cross-slip process. The barrier of a screw $<$a$>$ dislocation from the basal to the prismatic plane is estimated by the density functional theory for the first time to be $61.4\pm 2.0$ meV per Burgers vector length. The activation enthalpy for the cross slip is calculated using a line tension model based on the density functional theory to be $1.4$ to $1.7$ eV, which is in reasonable agreement with experiments. On the basis of the results, the effect of temperature on the cross-slip process of the dissociated screw $<$a$>$ dislocation on the basal plane is studied in detail using the molecular dynamics method with the embedded-atom-method (EAM) interatomic potential, in which the critical resolved shear stress for the cross slip is evaluated. It is confirmed that the bowed-out dislocation line on the prismatic plane consists of slightly dissociated rectilinear segments with connecting jogs at low temperatures and, as the temperature rises, the curved dislocation line becomes smooth with many segments. The motion of an $<$a$>$ dislocation on the prismatic plane is jerky in the low temperature region, while it is retarded by the formation of the largely dissociated plateau segment above the room temperature. A large reduction of the critical shear stress for the cross slip is obtained when the $<$a$>$ screw dislocation interacts with a hard-sphere particle placed on the basal plane in the low temperature region

AG-2015.06-837

cond-mat.mtrl-sci

Three-dimensional continuum dislocation theory

Khanh Chau Le

A three-dimensional continuum dislocation theory for single crystals containing curved dislocations is proposed. A set of governing equations and boundary conditions is derived for the true placement, plastic slips, and loop functions in equilibrium that minimize the free energy of crystal among all admissible functions, provided the resistance to the dislocation motion is negligible. For the non-vanishing resistance to dislocation motion the governing equations are derived from the variational equation that includes the dissipation function. A simplified theory for small strains is also provided. An asymptotic solution is found for the two-dimensional problem of a single crystal beam deforming in single slip and simple shear.

AG-2015.06-838

cond-mat.mtrl-sci

Self-energy of dislocations and dislocation pileups

Khanh Chau Le

A continuum model of dislocation pileups that takes the self-energy of dislocations into account is proposed. An analytical solution describing the distribution of dislocations in equilibrium is found from the energy minimization. Based on this solution we show (i) the existence of a critical threshold stress for the equilibrium of dislocations within a double pileup, and (ii) the existence of a non-linear regime in which the number of dislocations in a double pileup does not scale linearly with the resolved external shear stress, contrary to the classical double pileup model.

AG-2015.06-840

cond-mat.mtrl-sci

Formation of grains and dislocation structure of geometrically necessary boundaries

Michael Koster, Khanh Chau Le

A continuum dislocation model of formation of grains whose boundaries have a non-vanishing thickness is proposed. For a single crystal deforming in simple shear the lamellar structure of grains with thin layers containing dislocations as the geometrically necessary boundaries turns out to be energetically preferable. The thickness and the energy of this type of grain boundary are computed as functions of the misorientation angle.

AG-2015.06-842

cond-mat.mtrl-sci

Continuum dislocation theory accounting for statistically stored dislocations and Taylor hardening

Khanh Chau Le, Pramio Sembiring, Thi Nhung Tran

This paper develops the small strain continuum dislocation theory accounting for statistically stored dislocations and Taylor hardening for single crystals. As illustration, the problem of anti-plane constrained shear of single crystal deforming in single slip is solved within the proposed theory. The distribution of geometrically necessary dislocations in the final state of equilibrium as well as the stress-strain curve exhibiting the Bauschinger translational work hardening and the size effect are found. Comparison with the stress-strain curve obtained from the continuum dislocation theory without statistically stored dislocations and Taylor hardening is provided.

AG-2015.06-857

cond-mat.mtrl-sci

Giant Magneto-Seebeck Effect in Spin Valves

X. M. Zhang, C. H. Wan, Z. H. Yuan, H. Wu, Q. T. Zhang, X. Zhang, B. S. Tao, C. Fang, X. F. Han

Giant magneto-Seebeck (GMS) effect was observed in Co/Cu/Co and NiFe/Cu/Co spin valves. Their Seebeck coefficients in parallel state was larger than that in antiparallel state, and GMS ratio defined as (SAP-SP)/SP could reach -9% in our case. The GMS originated not only from trivial giant magnetoresistance but also from spin current generated due to spin polarized thermoelectric conductivity in ferromagnetic materials and subsequent modulation of the spin current by spin configurations in spin valves. Simple Mott two-channel model reproduced a -11% GMS for the Co/Cu/Co spin valves, qualitatively consistent with our observations. The GMS effect could be applied simultaneously sensing temperature gradient and magnetic field and also be possibly applied to determine spin polarization of thermoelectric conductivity and Seebeck coefficient in ferromagnetic thin films.

AG-2015.06-852

cond-mat.mtrl-sci

An operational definition of the 100 second blocking temperature T$_{\mathrm{B}100}$ for single molecule magnets

Rasmus Westerström, Alexey Popov, Thomas Greber

An important figure of merit for the performance of single-molecule magnets (SMMs) is the 100 s blocking temperature T$_{\mathrm{B}100}$. It is the temperature at which the remanence or zero field relaxation time is 100 seconds. If there is more than one relaxation process of the magnetisation, the determination of the relaxation times may, however, become ambiguous. Here we propose an operational definition for the zero-field magnetic relaxation times from which T$_{\mathrm{B}100}$ may be determined. This definition allows for a direct comparison of the performance of different samples independent of the details of the relaxation processes involved in the demagnetization.

AG-2015.06-868

cond-mat.mtrl-sci

Spectroscopic determination of the atomic f-electron symmetry underlying hidden order in URu$_2$Si$_2$

L. Andrew Wray, Jonathan Denlinger, Shih-Wen Huang, Haowei He, Nicholas P. Butch, M. Brian Maple, Zahid Hussain, Yi-De Chuang

The low temperature hidden order state of URu$_2$Si$_2$ has long been a subject of intense speculation, and is thought to represent an as yet undetermined many-body quantum state not realized by other known materials. Here, X-ray absorption spectroscopy (XAS) and high resolution resonant inelastic X-ray scattering (RIXS) are used to observe electronic excitation spectra of URu$_2$Si$_2$, as a means to identify the degrees of freedom available to constitute the hidden order wavefunction. Excitations are shown to have symmetries that derive from a correlated $5f^2$ atomic multiplet basis that is modified by itinerancy. The features, amplitude and temperature dependence of linear dichroism are in agreement with ground states that closely resemble the doublet $Γ_5$ crystal field state of uranium.

AG-2015.06-921

cond-mat.mtrl-sci

Semiconductor Nanowire Light Emitting Diodes Grown on Metal: A Direction towards Large Scale Fabrication of Nanowire Devices

A. T. M. Golam Sarwar, Santino D. Carnevale, Fan Yang, Thomas F. Kent, John J. Jamison, David W. McComb, Roberto C. Myers

Bottom up nanowires are attractive for realizing semiconductor devices with extreme heterostructures because strain relaxation through the nanowire sidewalls allows the combination of highly lattice mismatched materials without creating dislocations. The resulting nanowires are used to fabricate light emitting diodes (LEDs), lasers, solar cells and sensors. However, expensive single crystalline substrates are commonly used as substrates for nanowire heterostructures as well as for epitaxial devices, which limits the manufacturability of nanowire devices. Here, we demonstrate nanowire LEDs directly grown and electrically integrated on metal. Optical and structural measurements reveal high-quality, vertically-aligned GaN nanowires on molybdenum and titanium films. Transmission electron microscopy confirms the composition variation in the polarization-graded AlGaN nanowire LEDs. Blue to green electroluminescence is observed from InGaN quantum well active regions, while GaN active regions exhibit ultraviolet emission. These results demonstrate a pathway for large-scale fabrication of solid state lighting and optoelectronics on metal foils or sheets.

AG-2015.06-1187

cond-mat.mtrl-sci

ESR measurements of phosphorus dimers in isotopically enriched 28Si silicon

S. Shankar, A. M. Tyryshkin, S. A. Lyon

Dopants in silicon have been studied for many decades using optical and electron spin resonance (ESR) spectroscopy. Recently, new features have been observed in the spectra of dopants in isotopically enriched 28Si since the reduced inhomogeneous linewidth in this material improves spectral resolution. With this in mind, we measured ESR on exchange coupled phosphorus dimers in 28Si and report two results. First, a new fine structure is observed in the ESR spectrum arising from state mixing by the hyperfine coupling to the 31P nuclei, which is enhanced when the exchange energy is comparable to the Zeeman energy. This fine structure enables us to spectroscopically address two separate dimer sub-ensembles, the first with exchange (J) coupling ranging from 2 to 7 GHz and the second with J ranging from 6 to 60 GHz. Next, the average spin relaxation times, T1 and T2 of both dimer sub-ensembles were measured using pulsed ESR at 0.35 T. Both T1 and T2 for transitions between triplet states of the dimers were found to be identical to the relaxation times of isolated phosphorus donors in 28Si, with T2 = 4 ms at 1.7 K limited by spectral diffusion due to dipolar interactions with neighboring donor electron spins. This result, consistent with theoretical predictions, implies that an exchange coupling of 2 - 60 GHz does not limit the dimer T1 and T2 in bulk Si at the 10 ms timescale.

AG-2015.06-744

cond-mat.mtrl-sci

A concept for Lithography-free patterning of silicon heterojunction back-contacted solar cells by laser processing

Bugra Turan, Kaining Ding, Stefan Haas

Silicon heterojunction (SHJ) solar cells with an interdigitated back-contact (IBC) exhibit high conversion efficiencies of up to 25.6%. However, due to the sophisticated back-side pattern of the doped layers and electrode structure many processing and patterning steps are required. A simplification of the patterning steps could ideally increase the yield and/or lower the production costs. We propose a patterning approach for IBC SHJ solar cells free of any photo-lithography with the help of laser-induced forward transfer (LIFT) of the individual layer stacks to create the required back-contact pattern. The concept has the potential to lower the number of processing steps significantly while at the same time giving a large degree of freedom in the processing conditions optimization of emitter and BSF since deposition of the intrinsic/doped layers and processing of the wafer are all independent from each other.