Materials Science

AG-2026.09-180

cond-mat.mtrl-sci

Multimodal and Multiscale Interrogation of a Mechanically Tough Glass Forming Copper-Based Metal-Organic Framework

Mounir El Skafi, Guo-Qiang Li, Sophie R. Thomas, James D. Taylor, Mark Frogley, Gianfelice Cinque, Marc Pignitter, Michael Reithofer, Jia-Min Chin, Sebastian Henke, Jin-Chong Tan

A copper-based metal-organic framework, Cu(Im)2, was synthesized using a sol-gel process and subsequently melt-quenched into glass upon heating above 240 °C. In this paper, we present a multimodal, multiscale interrogation of the MOF nanocrystals and the resulting glasses. Structural characterization using X-ray diffraction, atomic force microscopy, and electron microscopy was performed to understand the morphology and size of the synthesized nanocrystals and glasses. Thermogravimetric analysis and differential scanning calorimetry were employed to understand the melting process of the crystals to form the glass. Synchrotron pair distribution function analysis was performed to verify that the framework structure is maintained upon melting, and nearfield infrared nanospectroscopy provided insight into the local chemical structure of the materials. The mechanical characterization via nanoindentation revealed that the resulting glasses exhibit an appreciably high elastic modulus (~10 GPa) and the highest fracture toughness (K_1c ~ 0.5 MPa m^1/2) yet reported for MOF glasses. This development is central to the emerging field of MOF-based materials processing and shaping, while upholding mechanical robustness and resistance to cracking.

AG-2026.09-193

cond-mat.mtrl-sci

From Goldene to Noblene: exhaustive enumeration of the ordered Au-Ag-Cu monolayer alloys

Marcelo Lopes Pereira Junior

Two-dimensional metals became a laboratory reality with the isolation of Goldene, a gold sheet one atom thick released by chemical exfoliation, which raises the question of what alloying can achieve on the same close-packed lattice. Here we combine an exhaustive enumeration of derivative superstructures with density functional theory to map the ordered Au-Ag-Cu monolayer alloys, relaxing every symmetry-inequivalent arrangement up to four atoms per cell and extending the set with larger cells selected by a fitted model. We find that the arrangement of the atoms, and not their proportion, controls the mixing energy, since the spread among the orderings of a single composition is several times the step between neighboring compositions, one composition spans more than 50~meV/atom between two arrangements of the same three atoms, and at two compositions the arrangement decides the sign. The energetics is carried by a competition between Au-Cu contacts, which bind, and Ag-Cu contacts, which do not, and bulk enthalpies computed under the same protocol show that this chemistry is not uniformly rescaled in two dimensions, since Au-Cu orders more strongly in the monolayer than in the crystal while the other two weaken. A pair model completed by an elastic size-mismatch term reproduces the computed energies to a few meV/atom and returns a composition landscape whose convex hull no balanced ternary composition reaches. One equimolar ordering, which we name Noblene, is the only structure in which every atom is surrounded exclusively by unlike species, and it is dynamically stable and metallic, and carries a Poisson's ratio above one half, higher than that of any of the three pure monolayers. Since Noblene sits on the lattice that Goldene already realizes, the route that produced Goldene is a plausible starting point for its synthesis.

AG-2026.09-194

cond-mat.mtrl-sci

Spin Hall Magnetoresistance in Antiferromagnetic Insulators

Stephan Geprägs, Matthias Opel, Johanna Fischer, Philipp Schwenke, Matthias Althammer, Hans Huebl, Rudolf Gross

Antiferromagnetic materials promise improved performance for spintronic applications, as they are robust against external magnetic field perturbations and allow for faster magnetization dynamics compared to ferromagnets. The direct observation of the antiferromagnetic state, however, is challenging due to the absence of a macroscopic magnetization. We show that the spin Hall magnetoresistance (SMR) is a versatile tool to probe the antiferromagnetic spin structure via simple electrical transport experiments by investigating the easy-plane antiferromagnetic insulators alpha-Fe2O3 (hematite) and NiO in bilayer heterostructures with a Pt heavy-metal top electrode. While rotating an external magnetic field in three orthogonal planes, we record the longitudinal and the transverse resistivities of Pt and observe characteristic resistivity modulations consistent with the SMR effect. We analyze both their amplitude and phase and compare the data to the results from a prototypical collinear ferrimagnetic Y3Fe5O12/Pt bilayer. The observed magnetic field dependence is explained in a comprehensive model, based on two magnetic sublattices and taking into account magnetic field-induced modifications of the domain structure. Our results show that the SMR effect allows to readout the spin configuration and to investigate magnetoelastic effects in antiferromagnetic multi-domain materials. We demonstrate that the SMR amplitude scales with the sum of the absolute sublattice magnetizations in ferrimagnetic and antiferromagnetic materials. In alpha-Fe2O3/Pt bilayers, we find an unexpectedly large SMR amplitude of 2.5E-3, twice as high as for prototype Y3Fe5O12/Pt bilayers, making the system particularly interesting for room-temperature antiferromagnetic spintronic applications.

AG-2026.09-197

cond-mat.mtrl-sci

'pySNOW': a Python Suite for the NanO-World

Sofia Zinzani, Gilberto Nardi, Giacomo Becatti, Davide Alimonti, Letícia F. Basso, Kevin Rossi, Francesca Baletto

In computational materials science, numerical simulations are indispensable tools for revealing atomic-scale processes. For building blocks of the nanoworld, such as nanoparticles and nanoalloys, atomistic simulations provide detailed insight into their behaviour under diverse conditions. These simulations enable the study of formation and growth mechanisms, transport phenomena, chemophysical stability, and chemical reactions, including catalytic processes. To unravel the complex structure--property relationships that characterise nanoobjects, it is crucial to develop robust and insightful representations of their atomistic structure at global and local scales. Such descriptions enhance our understanding of nanoparticle behaviour and play a key role in guiding their rational design in silico for targeted applications.

AG-2026.09-198

cond-mat.mtrl-sci

Chemical pressure and vacancies in crystals under nonhydrostatic stress

Michiel Sprik

Inhomogeneous stress is a driving force for diffusion of vacancies in crystals. The other way around a non-uniform distribution of vacancies induces stress. The accepted theory of composition-stress coupling in crystals is Larché-Cahn (LC) theory. Composition is defined in terms of the population of lattice sites with a limit of one-particle per site. Coupling is modelled by adding a compositional strain term to the elastic strain in the constitutive relation for stress. An alternative mechanism, proposed here, is letting the site binding energy vary with spatial (deformed) density. This generates a chemical pressure adding to the elastic stress. The governing equations for this model are derived using non-equilibrium continuum thermodynamic methods. The gradient of the chemical pressure has a dual function acting both as the drift force for migration and as an effective internal one body force in the Cauchy equation for the elastic stress. The practical evaluation presented in the paper is restricted to equilibrium properties. We examine the effect of externally applied non-hydrostatic stress, either in the form of surface tractions or a one-body force density (gravitation). The model system is a one component crystal with a fixed number of lattice sites. The number of particles can be variable but is always smaller than the number of lattice sites. The linear elastic response is modelled by the standard Lamé stress tensor. The results for systems deformed by surface tractions are in qualitative agreement with LC theory allowing for differences in the expression for the elastic moduli. Deviations are more serious for the crystal deformed by gravitation.

AG-2026.08-3314

cond-mat.mtrl-sci

Emergence and suppression of phonon vortices in two-dimensional crystals: Interplay of lattice symmetry, heavy impurities, and shear

Yu-Tian Zhang, Deng Pan, Yuliang Jin

Phonon vortices are vortex-like displacement fields that appear in the vibrational modes of two- dimensional materials. Here, we demonstrate that these vortices arise as symmetry-adapted linear combinations of degenerate planar phonon modes, with the superposition coefficients uniquely de- termined by the lattice point group. This symmetry principle establishes that vortices are intrinsic standing-wave solutions in perfect crystals, requiring neither impurities nor disorder. A heavy mass impurity favors vortex modes over planar modes through stronger resonance-induced frequency soft- ening, whereas shear deformation suppresses vortex modes by breaking rotational symmetry. The competition between these two effects gives rise to a precisely predictable strain threshold. The proposed framework, grounded in symmetry and energy-minimization, provides a useful basis for understanding vibrational topological defects induced by other types of impurities or defects. This study further suggests that defect and shear engineering constitutes an effective tuning strategy for controlling vibrational modes and the associated thermal and mechanical properties of crystals.

AG-2026.08-3316

cond-mat.mtrl-sci

Layer Axial Phonons and Dipolar Thermal Response in Centrosymmetric Thin Films

Madhubanti Mukherjee, Kapil Gope, Barun Ghosh

In nonmagnetic centrosymmetric materials, $\mathcal{PT}$ symmetry enforces vanishing total phonon angular momentum (phonon AM) at every wave vector, making them appear unsuitable as hosts of axial phonons. Here, using first-principles calculations for BaAgAs and representative van der Waal's layered materials, we show that centrosymmetric slabs can still host large hidden layer-resolved phonon AM with both chiral and cycloidal modes. This hidden phonon AM texture produces layer resolved phonon thermal Edelstein-like responses and a real-space phonon AM dipole response, both tunable by strain. Our results establish centrosymmetric layered materials as an exciting platform for hidden axial phonon and multipolar phonon thermal response.

AG-2026.08-3278

cond-mat.mtrl-sci

Freezing of a deformable water-saturated porous medium. Part I: THM formulation, OpenGeoSys-6 implementation and benchmarking

Tymofiy Gerasimov, Christian B. Silbermann, Dmitri Naumov, Olaf Kolditz, Haibing Shao, Thomas Nagel

In this contribution, Part I, we present a coupled thermo-hydro-mechanical formulation for modeling and analyzing water-to-ice phase change in a deformable fully-saturated porous medium. It is implemented in the multi-physics computational platform OpenGeoSys-6. We compute a series of carefully designed benchmark problems which critically examine the corresponding formulation components and the overall implementation. Several ingredients that have a qualitative and quantitative impact on the numerical results are identified, particularly dissected and commented on. Simulations also account for soil deformation induced by freezing (as a result of 9% volumetric expansion caused by water-to-ice phase transition). The forthcoming Part II will complete the code verification and validation campaign by considering a real full-scale three-dimensional case study of shallow subsurface ice storage. More specifically, we simulate the ice growth process in a fully saturated soil specimen surrounding a group of borehole heat exchangers (BHEs) that contain subzero temperature coolant fluid. A snapshot of the numerical results of this task is already depicted here in Part I as a teaser.

AG-2026.08-3243

cond-mat.mtrl-sci

Valley-Enabled Intrinsic Dresselhaus Spin-Orbit Coupling in Silicon

Johannes L. P. Steinschuld, Hendrik J. Bluhm, Lars R. Schreiber, Seyed Akbar Jafari

We develop a symmetry-based theory of spin-orbit-valley coupling in silicon that reveals an intrinsic source of Dresselhaus spin-orbit coupling independent of interfaces or external electric fields. Treating the valley degree of freedom as a symmetry-carrying quantum degree of freedom, we show that the Dresselhaus interaction is necessarily valley off-diagonal and that a bulk contribution proportional to the valley Pauli matrix $τ_1$ is symmetry allowed. Tight-binding calculations yield a bulk coupling more than an order of magnitude larger than typical interface-induced spin-orbit coupling; achieving the same energy scale through the interface-induced mechanism would require electric fields roughly 50 times larger than typical fields. We further derive the symmetry-allowed spin-valley couplings generated by magnetic-field gradients and show how they account for the valley-dependent Zeeman splitting observed in micromagnet experiments. A slight tilt of the background magnetic field out of the plane produces an additional isotropic contribution linear in $B_z$, providing an experimentally accessible signature of the corresponding coupling constant. Finally, we predict a spin-independent micromagnet-induced valley splitting in the $τ_3$ channel, which is distinct from the $τ_{1,2}$ channels generated by alloy disorder and therefore remains robust against disorder-induced cancellation. These results establish valley symmetry as a fundamental ingredient in the spin-orbit physics of silicon and provide new mechanisms for controlling and probing spin and valley degrees of freedom in silicon quantum devices.

AG-2026.08-3082

cond-mat.mtrl-sci

Intrinsic anomalous Hall response in the bilayer kagome ferromagnet Co$_3$Sn

Yuqi Qin, Soumya Sankar, Xingkai Cheng, Yifan Jiang, Shiming Lei, Junwei Liu, Berthold Jäck

Transition-metal kagome magnets provide a rich platform for investigating the interplay between layer stacking, magnetic order, and band topology. Here, we report the molecular beam epitaxy and experimental investigation of high-quality thin films of the kagome metal Co$_3$Sn, which has not been synthesized in bulk form yet. Structural and chemical analyses confirm a hexagonal lattice structure ($P6_3/mmc$) composed of direct A-B stacked Co$_3$Sn kagome bilayers. Magnetometry reveals robust easy-plane ferromagnetism with a Curie temperature exceeding $300\,\text{K}$. Magneto-transport measurements demonstrate metallic behavior (carrier density $n\approx5.01\times10^{22}\,\text{cm}^{-3}$) alongside a temperature-independent anomalous Hall conductivity of $σ_{\rm AHE}\approx90\,Ω^{-1}\cdot{\rm cm}^{-1}$, extending from $2\,\text{K}$ up to room temperature. Results from first-principles density functional theory calculations attribute this anomalous Hall response to intrinsic Berry curvature hotspots near the Fermi level in the spin-split band structure. Our results establish Co$_3$Sn as a room-temperature kagome ferromagnet and highlight the impact of the layer stacking sequence on the material properties of kagome metals from the CoSn family.

AG-2026.08-3083

cond-mat.mtrl-sci

Atomic-scale composition of the ternary III-V semiconductor (Al,Ga)Sb visualized by cross-sectional scanning tunneling microscopy

Hitesh Kumar, Vladimir Kaganer, Zijin Lei, Rüdiger Schott, Werner Wegscheider, Stefan Fölsch

Cross-sectional scanning tunneling microscopy at 5 K is used to investigate cation mixing in (Al,Ga)Sb layers grown by molecular beam epitaxy, via direct atom counting at the (1-10) and (110) cleavage planes. Electronic contrast between Al and Ga surface cations enables statistical analysis of the metal sublattice along the non-equivalent <110> directions within the zincblende (001) surface and along the [001] growth direction. The cation distribution is found to be random both along the growth direction and within the growth plane, with no evidence of long-range order or anisotropic growth kinetics; notably, the mean numbers of consecutive cations of the same type along the two in-plane directions are equal, possibly due to statistical averaging over randomly distributed subsurface cations. The results are compatible with either strain-mediated interactions during cation incorporation at the growth front or ideal, uncorrelated cation mixing. Overall, the examined (Al,Ga)Sb alloy shows an exceptionally high degree of atomic-level homogeneity.

AG-2026.08-3059

cond-mat.mtrl-sci

The Effect of Geometry on Thermodynamic Response

Bojana Bokic, Sébastien R. Mouchet, Biljana Stankov, Sanja Ostojic, Nicolas Roy, Darko Vasiljevic, Yin Chang, Marija Radmilovic-Radjenovic, Branislav Radjenovic, Thierry Verbiest, Mohamed Hatifi, Branko Kolaric

At the nano- and microscale, various patterns influence and shape thermal and optical response, making them essential for the survival of various biological species. In addition, controlling thermal radiation is vital for a broad range of applications, such as thermal management, spectroscopy, optoelectronics, and energy conversion technologies. For this reason, there is strong pressure to elucidate the physics of thermal radiation at the nanoscale. In this article, we provide evidence that complex nanoscale geometries affect thermal management, leading to an unusual thermal response in heat-capacity measurements as a function of temperature. Beyond identifying the structural constraints associated with this unusual thermodynamic response, the current study introduces the possibility of shaping the apparent heat-capacity response through geometry without necessarily altering the system's chemistry.

AG-2026.08-3089

cond-mat.mtrl-sci

Self-selective growth of GaAs1-xBix on GaAs zinc blende/wurtzite nanowire heterostructures

Rohit Yadav, Sebastian Lehmann, Vidar Flodgren, Evangelos Golias, Alexei Zakharov, Kimberly A. Dick, Anders Mikkelsen, Rainer Timm

Site-selective nanostructure growth and material incorporation at the atomic scale offer a promising pathway for engineering quantum materials and nanodevices. Here, GaAs nanowires (NWs) with an axial heterostructure of alternating zinc blende (Zb) and wurtzite (Wz) crystal phases are employed as templates for site-selective Ga and Bi overgrowth. Using X-ray photoemission electron microscopy (XPEEM) with nanoscale spatial resolution, we map elemental distribution and local chemical bonding to reveal the incorporation behavior of Bi atoms in {110} Zb and {11-20} Wz facets. Bi incorporation proceeds through an anion-exchange process, where Bi atoms replace As, forming local Ga-Bi bonds and producing a thin GaAs1-xBix shell. We observe crystal-phase-dependent Bi incorporation, with higher Bi concentration in the Zb segments than in the neighboring Wz segments within the same NW. Furthermore, the Zb segment with higher Bi content exhibits reduced susceptibility to oxidation compared with the Wz segment, resulting in increased Ga-oxide in the Wz surfaces. This study highlights GaAs NW Zb/Wz heterostructures as a template for controlled growth of GaBi and GaAs1-xBix nanostructures with tailored functionalities for quantum applications

AG-2026.08-3031

cond-mat.mtrl-sci

When chemical potential continuity fails: kinetic interface models for hydrogen isotope transport

Remi Delaporte-Mathurin, James Dark

Macroscopic hydrogen transport codes model material interfaces with local thermodynamic equilibrium (LTE), imposing continuity of chemical potential as a per-species constraint. Three assumptions hide in that condition: fast interfacial equilibration, a single exchange pathway between the two sides, and a carrier species known in advance on each side. The literature scrutinises the first, but the other two are the more consequential failures, and neither survives at a metal/molten-salt interface. We replace the constraint with reversible reaction channels at the interface that obey mass action, with detailed balance fixing each ratio of rate constants from the thermodynamic data that already parameterise LTE, and we implement the framework in festim. LTE is recovered as the fast-kinetics limit of a single channel, in both its Sieverts/Sieverts and its Sieverts/Henry form, so the framework generalises LTE and does not compete with it. A Damköhler number delimits validity within a channel, a branching ratio between channels. In a representative nickel/FLiBe system, hydrogen partitions kinetically between molecular and fluoride carriers. The apparent interfacial law then drifts between Sieverts and Henry with loading and salt redox state, and an LTE condition underestimates the steady permeating flux. The measured pressure exponent is set by the branching ratio, not by any fixed property of the salt; a redox sweep at fixed temperature should continuously shift it between 0.5 and 1. With two isotopes, two metal-side species feed five salt-side carriers, and a per-species LTE condition is ill-posed.

AG-2026.08-2823

cond-mat.mtrl-sci

Origin of High-Temperature Antiferromagnetic Order in a van der Waals Material

Rabindra Basnet, Hari Paudyal, Gicela Saucedo Salas, Nicholas P. Butch, Durga Paudya, Ramesh C. Budhani

While Van der Waals (vdW) itinerant antiferromagnets with high Neel temperatures (TN) are highly desirable for spintronics, they remain relatively scarce. Here, we unravel the physical origin of the unusually high TN (= 250 K) in the newly identified vdW compound (Fe0.65Co0.35)4GeTe2. The substitution of Co in Fe4GeTe2 induces layer-selective Fe-Co ordering and stabilizes a robust antiferromagnetic (AFM) state primarily driven by Co moments. The AFM order is further strengthened by enhanced electronic correlations of quasi-localized Co 3d-states at the Fermi level, giving rise to an itinerant-localized duality of the 3d electrons. This interplay generates strong magnetic correlations well above TN and stabilizes low-temperature spin canting with a possible nontrivial Berry curvature. Our results establish (Fe0.65Co0.35)4GeTe2 as a rare material bridging fundamental magnetic interactions with potential applications in AFM spintronics.

AG-2026.08-2554

cond-mat.mtrl-sci

Predicting THz Generation Capability of Organic Crystals through Data Mining and Crystal Nonlinearity Models

Sin Hang Ho, Ashton Roma, Connor Barlow, Matthew Lutz, Natalie Green, Stacey Smith, David Michaelis, Jeremy A Johnson

We report the use of DFT computation and mathematical models to predict the nonlinear dielectric polarization (P^{NL}) and nonlinear susceptibility coefficients (χ^{(2)}_{IJK}) of organic materials based on their crystal structures. We apply this computation approach on single-component crystals, co-crystals and ionic crystals found through data mining the Cambridge Structural Database. We verify these computational results with experimental terahertz (THz) generation efficiencies for known THz generators, demonstrating consistency between the measurements and the computed values. Several mined structures show similar or larger PNL values compared to state-of-the-art THz generation crystals DAST, OH1 and BNA, suggesting great potential for their use in nonlinear optical (NLO) applications. Importantly, we also compared the resulting model of nonlinear optical tensor components with commonly-used simplifications of nonlinearity, showing that the comprehensive approach should be the standard method to evaluate the nonlinear optical properties of single-crystalline materials.

AG-2026.08-2581

cond-mat.mtrl-sci

Spectrally Programmable Spin-Polarized Photocurrents in WSe$_2$-NiPS$_3$ Magnetic van der Waals Heterostructures

Rajesh Kumar Yadav, Michal Poplinger, Adi Levi, Adi Harchol, Nirman Chakraborty, Thomas Brumme, Thomas Heine, Efrat Lifshitz, Doron Naveh

Efficient generation and control of spin-polarized currents in semiconductors remain central challenges for spin-based electronics, particularly due to impedance mismatch and the reliance on magnetic fields or ferromagnetic contacts. Here, we introduce a materials platform for spectrally programmable spin transport based on a van der Waals heterostructure combining the antiferromagnetic semiconductor NiPS$_3$ with WSe$_2$. In a p-n diode architecture, circularly polarized excitation produces pronounced photoconductive resonances with spin polarization reaching 80% near the Neel temperature and persisting at 30% at room temperature. Remarkably, selected spectral bands retain their polarization sign across the magnetic phase transition, evidencing robust, spectrally protected spin-polarized current generation. Polarization-resolved photogalvanic measurements reveal a dominant circular injection-current mechanism, confirming spin-polarized carrier transport. First-principles calculations show that an applied electric field induces interfacial hybridization and spin-layer locking, giving rise to localized symmetry breaking and enhanced optical absorption while preserving global time-reversal symmetry. These results establish spectral tuning of excitation as a new control knob for spin transport, enabling spin-current generation without magnetic fields or polarization switching. Our findings position magnetic van der Waals heterostructures as a versatile platform for opto-spintronic functionality and spectrally programmable spintronic devices.

AG-2026.08-2320

cond-mat.mtrl-sci

The principle of detailed balance between electrons and phonons in presence of excitonic effects

Alberto Guandalini, Giovanni Caldarelli, Francesco Mauri, Francesco Macheda

Based on a many-body formulation, we derive an electron-phonon coupling including excitonic effects that preserves thermodynamic detailed balance between electronic and phononic scattering processes. We start from the microscopic electron-nucleus Hamiltonian, expand around the Born-Oppenheimer equilibrium geometry, and construct an effective action for the electronic and phononic propagators. From the same effective action, we derive both electronic and phononic self-energies in terms of a nonlocal vertex $\mathcal G^{\textrm{s}}$ including excitonic effects, which generalizes the usual local interaction vertex $g^{\textrm{s}}$. When electrons and phonons are well-defined quasiparticles in the screened-exchange approximation and $\mathcal G^{\textrm{s}}$ is taken in its static limit, both self-energies reduce to Fermi-golden-rule expressions containing the same $\mathcal G^{\textrm{s}}$, thereby ensuring detailed balance. As an application, we compute electronic and phononic linewidths in graphene and illustrate this common-vertex construction. We analyze the competition between the reduced scattering phase space induced by the screened-exchange band structure and the enhancement of the electron-phonon vertex due to excitonic effects, finding that the vertex enhancement can compensate for and overcome the phase-space reduction in both electronic and phononic linewidths.

AG-2026.08-2321

cond-mat.mtrl-sci

Absence of lateral domain wall mobility in Zn1-xMgxO thin films

Jack Eckstein, Kyle P. Kelley, William Prudnick, Jon-Paul Maria, Stephen Jesse, Neus Domingo, Rama K. Vasudevan

Polarization reversal in ferroelectrics arises from the coupled processes of domain nucleation and subsequent growth, yet the governing mechanisms differ fundamentally between classical perovskite oxides and emerging wurtzite ferroelectrics. While switching in perovskites is typically governed by mobile domain walls whose field-driven propagation dominates macroscopic kinetics, here we show that polarization reversal in wurtzite Zn1-xMgxO proceeds through a qualitatively different pathway. Using scanning oscillator microscopy, in combination with point pulse-imaging methods, we directly map local switching events and domain wall responses, revealing that domain walls in Zn1-xMgxO exhibit negligible lateral mobility (sub 10nm) and that polarization reversal proceeds predominantly through the nucleation of vertically extended columnar filaments with a lateral size on the order of the grains. This nucleation-controlled switching contrasts sharply with the growth-mediated dynamics characteristic of perovskite ferroelectrics and explains the abrupt, spatially localized switching behavior observed in wurtzite systems. These results establish nucleation-dominated filamentary reversal as a defining switching mechanism in Zn1-xMgxO and point towards the need for further studies to understand correlation lengths and nucleation processes across a range of grain sizes.

AG-2026.08-2325

cond-mat.mtrl-sci

Displacement-field-driven reconstruction of low energy transport in few-layer PtSe2

Xiao Liu, Yaroslav Zhumagulov, Yuang Jie, Ahmet Enes Bozcali, Johan Felisaz, Qi Zhang, Oldvrich Cicvarek, Kenji Watanabe, Takashi Taniguchi, Zdeněk Sofer, Oleg V. Yazyev, Ahmet Avsar

In layered semiconductors, a perpendicular displacement field generates an interlayer potential difference that competes with interlayer hybridization, modifying both the band gap and the finite-density electronic states that carry current. Resolving this interplay requires a material lying close to the semiconductor-to-semimetal transition, where moderate electric fields can strongly reshape the low-energy electronic structure. Here, we investigate displacement-field-driven transport in dual-gated semiconducting PtSe2, whose pronounced thickness-dependent electronic structure provides access to this low-band-gap regime. Unlike thinner layers, the displacement-field response is strong in six-layer PtSe2, which lies at the verge of the semiconductor-to-semimetal crossover with only a small residual transport gap. Even weak displacement fields rapidly suppress this residual gap near charge neutrality, driving the system toward a band-overlap regime. At the same time, the conductivity decreases in the heavily hole-doped regime, demonstrating that the displacement field modifies not only the gap but also the conducting valence-band states. Fixed-relaxation-time Wannier transport calculations reproduce both responses, showing that they originate from field-induced band overlap together with reconstruction of the valence-band dispersion. These results establish finite-density transport as a sensitive probe of displacement-field-driven electronic structure reconstruction and extend electrical control beyond conventional band-gap engineering.

AG-2026.08-2326

cond-mat.mtrl-sci

Discovery of New Zintl Films and Nanowires Grown by Topotaxy Conversion of III-V Semiconductors

Man Suk Song, Lothar Houben, Jean Souza, Edanel Fishbein, Moshe Haim, Ambikesh Gupta, Yufei Zhao, Anna-Eden Kossoy, Binghai Yan, Haim Beidenkopf, Hadas Shtrikman

Zintl phases draw broad interest for their diverse structural, magnetic, thermoelectric, topological and optical properties. Recently, Zintl Eu$_3$In$_2$As$_4$ and Eu$_5$In$_2$As$_6$ nanowires with axion magneto-topology have been synthesized by molecular beam epitaxy via topotactic conversion of InAs wurtzite and zincblende nanowires. Here we extend this methodology, demonstrating that topotaxial mutual-exchange growth applies not only to a broader set of III-V semiconductors beyond InAs but also to three-dimensional substrates whose surfaces are converted into Zintl thin films, as well as to nanowires. We report the growth of two new compounds: Eu$_5$Ga$_2$As$_6$ thin films converted from GaAs substrates, and Eu$_5$Al$_2$As$_6$ thin films from AlAs films. We also convert GaAs nanowires of both wurtzite and zincblende structures into Eu$_5$Ga$_2$As$_6$ nanowires. Though the stoichiometry is the same as in the previously reported Eu$_5$In$_2$As$_6$ case, microscopy and diffraction reveal a single-phase Pnma symmetry group rather than Pbam, highlighting symmetry-guided topotactic pathways to new Zintl frameworks. The compounds host an intricate magnetic phase diagram with three magnetic transitions, including two distinct antiferromagnetic orders and a canted antiferromagnetic phase that evolves into another antiferromagnetic phase under applied field through a spin-flop transition. Ab initio calculations predict that both Zintls are semiconductors with gaps of 0.79 eV in Eu$_5$Ga$_2$As$_6$ and 0.90 eV in Eu$_5$Al$_2$As$_6$. The lower symmetry and increased structural complexity suggest suppressed lattice thermal conductivity, pointing to thermoelectric potential alongside prospects in spintronics and detector technologies. These results give an epitaxy-compatible route for discovering and integrating magnetic Zintl thin films and nanowires directly from relevant III-V semiconductors.

AG-2026.08-2329

cond-mat.mtrl-sci

A Topological Magnonic Black-White Hole Crystal

D. Galvez-Poblete, R. M. Otxoa, A. S. Nunez, S. Allende

The low-energy dynamics of antiferromagnetic spin waves map onto a massive Klein-Gordon scalar field, providing a solid-state platform for analogue-horizon physics. We show that an inhomogeneous spin current generates an effective magnon flow capable of forming black- and white-hole horizons. Horizon-pair cavities exhibit resonant transport and superradiant-like amplification mediated by magnon-antimagnon mixing. Our central result is that a periodic arrangement of submagnonic and supermagnonic regions forms a non-reciprocal magnonic crystal in which entering the supermagnonic regime makes negative-norm propagating channels available and enables the bulk gap to close and reopen. This drives a topological transition characterized by a change in the Zak phase and the emergence of a hybrid magnon-antimagnon edge state. These results establish a direct connection between analogue-horizon physics and topological magnonics, providing an electrically tunable route for controlling magnonic band topology.

AG-2026.08-2332

cond-mat.mtrl-sci

Chiral Phonons and Giant Anisotropic Photoresponse in Quasi-1D van der Waals Semiconductor ZrSnS3

Zahir Muhammad, Shashi B. Mishra, Gayatri, Grzegorz Krasucki, Wajid Ali, Katarzyna Olkowska-Pucko, Obaid Iqbal, Zia Ur Rehman, Aziz Ur Rahman, Maciej R. Molas, Lin Xiaoyang, Weisheng Zhao

Low-dimensional van der Waals semiconductors with reduced symmetry provide a unique platform for exploring anisotropic physical properties. The quasi-one-dimensional family MXQ$_3$ (M = Hf, Zr; X = Sn; Q = S, Se) exhibits notable structural anisotropy, where zigzag atomic chains influence optical phenomena such as birefringence. This study investigates anisotropic lattice dynamics in ZrSnS$_3$ using angle- and polarization-dependent Raman spectroscopy. Temperature-dependent measurements reveal anharmonic phonon behavior, indicating strong phonon-phonon coupling. Density functional theory calculations show good agreement with the experimentally observed Raman spectra, validating the microscopic description of the lattice dynamics. We also observe a helicity-dependent intensity and a reversal in phonon intensity between lower- and higher-frequency modes under circularly polarized light, which is characteristic of chiral phonons governed by the polarization of the Zr/Sn chains. Our first-principles analysis further shows that angular-momentum-like phonon textures can emerge away from the $Γ$-point near mode-hybridization and avoided-crossing regions, providing microscopic insight into the observed helicity-dependent Raman signatures. Furthermore, we fabricate an optoelectronic device from a thin ZrSnS$_3$ nanowire, demonstrating a photoresponsivity of 50~mA/W under 520~nm laser excitation (1~mW/cm$^2$). The device exhibits a pronounced, power-scalable anisotropic photoresponse with a clear preferred polarization direction. These results highlight the coupling mechanisms between polarization, lattice vibrations, and charge carriers in ZrSnS$_3$, establishing it as a promising material for polarization-sensitive optoelectronics and directional quantum transport.

AG-2026.08-1937

cond-mat.mtrl-sci

Quantum Dissipative Paraelectricity

A. Cano

Whether a quantum system with a double-well effective potential undergoes spontaneous symmetry breaking depends not only on the potential landscape but also on the kinetics and the coupling with additional degrees of freedom. Here we introduce a quasi-exactly solvable model to study this problem in the context of ferroelectrics, with results that apply to a broad class of quantum phase transitions. Exploiting the analytical solutions, we provide a strict definition of the quantum paraelectric regime and identify a distinct quantum ferroelectric regime in which symmetry breaking can be realized without tunneling features. We then show that explicit symmetry breaking cannot be inferred from the order-parameter Hamiltonian alone, but requires additional couplings. This leads us to identify a regime of \emph{quantum dissipative paraelectricity}, in which observable symmetry breaking is suppressed during the evolution toward the ground state, even when the double-well structure dominates over zero-point quantum fluctuations.

AG-2026.08-2090

cond-mat.mtrl-sci

Effects of the surface on double surface Fermi arcs in a realistic tight-binding model of Na$_3$Bi (100)

Vasilios K. Passias, Lucas K. Wagner

Na$_3$Bi is a topological Dirac semimetal (TDSM) that can support double surface Fermi arcs (DSFAs), which are important for its material classification and their potential use in spintronic devices. However, it is unclear how the surfaces affect realistic Na$_3$Bi (100) systems. To investigate the effects of diverse surfaces on DSFAs, we consider first principles derived tight-binding models of two Na$_3$Bi (100) terminations. On the stoichiometric termination, we find DSFAs as expected. On the non-stoichiometric structure there are DSFAs on one termination and two loops that retain many of the properties of DSFAs. Thus, the local properties such as spin momentum locking and hybridization with the Dirac points appear to be more robust than their global connectivity. That is, the surface can reshape the arc fingerprint without destroying the arc-like physics.

AG-2026.08-2092

cond-mat.mtrl-sci

Amorphous and Nanocrystalline Topological Semimetal YPtBi/W/CoFeB Heterostructures for BEOL-Compatible Spin-Orbit Torque Devices

Quang Le, Brian R. York, Cherngye Hwang, Xiaoyong Liu, Tsann Lin, Xiaoyu Xu, Yudi Wang, Jia Li, Mazin Osman, Katherine Le, Maher Osman, Son Le, Lei Xu, Maki Maeda, Tuo Fan, Yu Tao, Hisashi Takano, Sho Kagami, Ohiro Fujie, Pham Nam Hai

Spin-orbit torque (SOT) devices require spin-source materials that combine efficient charge-to-spin conversion with back-end-of-line (BEOL) thermal compatibility. Here, we show that YPtBi/W/CoFeB heterostructures deposited directly on Si/SiOx remain predominantly amorphous or weakly nanocrystalline from room temperature to 400 °C while preserving a large effective damping-like SOT response. Anomalous Hall and harmonic Hall measurements, together with X-ray diffraction, cross-sectional transmission electron microscopy, X-ray reflectivity, and electron energy-loss spectroscopy, show that the response does not correlate with bulk crystallization of YPtBi. Instead, the interfacial analysis indicates that the strongest trend of the spin Hall angle is associated with the chemistry of the upper YPtBi/W boundary: the effective SOT response tracks the integrated W concentration at that YPtBi surface. Meanwhile, a two-spin source analysis shows that the Pt-W-rich interlayer provides only a small positive correction, insufficient to explain the large negative effective spin Hall angle by itself. The dominant control variable is therefore inferred to be the incorporation of W into the upper YPtBi interface, which plausibly modifies the local electronic structure of YPtBi and amplifies the stack-level response. These results provide a more physically constrained interpretation of the stack behavior and identify a BEOL-compatible route to disordered topological spin-source layers for scaled SOT memory and compute-in-memory hardware.

AG-2026.08-2050

cond-mat.mtrl-sci

Constitutive modelling of open-porous neo-Hookean solids

Ameya Rege

Open-porous materials exhibit pronounced compressibility, nonlinear densification, and power-law scaling of stiffness with density. In this work, we propose a thermodynamically consistent compressible neo-Hookean constitutive model for open-porous solids in which porosity serves as the primary governing variable. The strain-energy density is formulated to couple distortional elasticity of the solid skeleton with a volumetric response governed by deformation-induced porosity evolution, including a bounded representation of pore collapse. The formulation introduces a minimal set of parameters, namely the initial porosity, intrinsic skeleton moduli, and a scalar parameter controlling the onset of densification. A key feature of the model is a modified volumetric term in which the response is normalised by the current porosity, ensuring a physically consistent transition from a porous to a densified state without artificial stiffening. In the small-strain limit, the model recovers classical linear elasticity with effective moduli that may be chosen either from homogenisation bounds, such as the Hashin-Shtrikman estimates, or from Gibson-Ashby-type power-law scaling to capture topology-dependent behaviour. At finite strains, the formulation captures the characteristic nonlinear stiffening and convex stress-stretch response associated with progressive pore collapse. The proposed framework thus provides a compact, flexible, and extensible constitutive description that unifies effective-medium consistency with experimentally observed scaling behaviour, and is well suited for finite element implementation and multiscale modelling of highly compressible open-porous materials. The model is finally validated against available experimental data.

AG-2026.08-1817

cond-mat.mtrl-sci

Ultrafast order-selective electron imaging and spectroscopy

Jan Philipp Bange, Till Domröse, Claus Ropers, Stefan Mathias, Marcel Reutzel, .

Ultrafast pump-probe spectroscopies in energy and momentum have become indispensable for probing non-equilibrium dynamics in quantum materials, revealing pathways in ultrafast energy conversion and light-induced phase transitions. Different modalities uniquely access the coupled lattice, charge, and spin degrees of freedom that underpin the functionality of these materials. However, investigating technologically relevant nanoscale devices also requires high spatial resolution. Although electron microscopy provides nanometer-scale imaging, it frequently lacks the simultaneous ultrafast temporal resolution and spectroscopic specificity needed for such studies. In this perspective, we review recent advances in dark-field electron and photoelectron microscopy, focusing on two complementary techniques: femtosecond photoelectron momentum microscopy and ultrafast transmission electron microscopy. Their application enables comprehensive insights into the ultrafast dynamics of the electron, lattice, and spin subsystems. These order-selective electron imaging and spectroscopy techniques open broad scientific opportunities for a microscopic understanding of non-equilibrium phenomena in quantum materials, nanostructures and devices.

AG-2026.08-1806

cond-mat.mtrl-sci

On the temperature dependence of the optical band gap in the material system of lithium niobate and lithium tantalate

Maximilian Henneke, Michael Ruesing, Nina A. Lange, Timon Schapeler, Noah Spiegelberg, Ernst-Lukas Kuhlmann, Elke Beyreuther, Philipp Mues, Ludmila Eisner, Lukas M. Eng, Laura Padberg, Donat J. As, Klaus-Dieter Becker, Tim J. Bartley, Christine Silberhorn, Christof Eigner

Lithium niobate and lithium tantalate see widespread use in optics and electronics, and are increasingly used for cryogenic applications. Despite their broad deployment, their optical band gap and its relation to the crystal stoichiometry are not well characterised as a function of temperature. In this work, we study the optical absorption properties of congruent, stoichiometric, MgO-doped and Er-doped lithium niobate as well as congruent lithium tantalate across the temperature range between 7~K and 1000~K by means of optical transmission spectroscopy. Our results demonstrate that the difference of the optical band gap typically observed at room temperature between different stoichiometries is not primarily attributable to the intrinsic electronic structure, but rather to different electron-phonon couplings and the average phonon energies. Additionally, we exemplarily study the temperature shift of the 523 nm absorption line in Er-doped lithium niobate due to the increased interest in optically active dopants. To facilitate future analyses, we present the open-source software suite PhoQS-Treat (Tauc Regression Edge Analysis Tool), which enables automated Tauc regressions alongside additional analytical capabilities. This work advances the development of high-performance lithium niobate-based devices.

AG-2026.08-1711

cond-mat.mtrl-sci

A single design choice determines whether machine learning models of materials make physically impossible predictions

Can Polat, Mustafa Kurban, Erchin Serpedin, Hasan Kurban

Machine-learned models are replacing first-principles calculations across materials discovery, and physical symmetry is the central guarantee built into them. The debate over how much symmetry to hard-wire rather than learn has run on rotations, where a symmetry error is an approximation error. Some constraints are exact: symmetry forces certain property tensors to exactly zero, so a nonzero prediction is physically impossible rather than inaccurate. Here we show that whether a model can make such predictions is decided before training by one rarely reported design bit, whether its features carry parity labels, and derive a criterion, the parity gap, that computes from group theory alone which properties and crystals are exposed. Across matched architecture pairs differing only in that bit, evaluated on two thousand centrosymmetric crystals whose piezoelectric tensor must vanish, parity-labelled arms sit at the floating-point floor while rotation-only arms predict forbidden responses on 90-96% of crystals, six orders of magnitude apart, at no accuracy cost. Training on explicit zeros does not recover exactness, and a head on a frozen universal potential inherits its backbone's symmetry group. One reflection at random initialization verifies the label in seconds.

AG-2026.08-1825

cond-mat.mtrl-sci

Interface-Controlled Spin-Orbit Torques in Rare-Earth Synthetic Ferrimagnets Probed by Sagnac Magneto-Optics and Harmonic Hall Measurements

Akilan K, Koral Aykin, Jose-Luis Ampuero, Laurent Badie, Stephane Mangin, Sébastien Petit-Watelot, Michel Hehn, Andrew D. Kent, J. -Carlos Rojas-Sánchez

Spin-orbit torque (SOT) provides an efficient route for manipulating magnetization in spintronic devices, and its accurate quantification is essential. Here, we investigate Co/Gd-based synthetic ferrimagnets using complementary magnetotransport and magneto-optical techniques. We use a Sagnac magneto-optical interferometry method to directly quantify current-induced magnetization tilting and extract the damping-like SOT effective field. The Sagnac measurements show good agreement with harmonic Hall analysis across different Co/Gd and Gd/Pt/Co heterostructures, providing a quantitative determination of the damping-like SOT effective field that does not rely on electrical transport signatures. By varying the Gd thickness and multilayer stacking order, we demonstrate that the damping-like torque is strongly influenced by spin transport and angular momentum conversion at rare-earth and heavy-metal interfaces. The observation of a finite torque in Gd/Pt/Co/Pt structures, where conventional Pt spin Hall contributions are expected to compensate, highlights the active role of the Gd layer in SOT generation. Furthermore, interface engineering enables perpendicular magnetic anisotropy in Gd/Pt/Co/Al heterostructures with a 2-nm-thick Co layer, allowing current-induced SOT switching at current densities of 8-10 MA/cm$^2$. These results establish rare-earth-based synthetic ferrimagnets as a versatile platform for engineering spin-orbit phenomena and optimizing low-power spintronic devices.

AG-2026.08-1605

cond-mat.mtrl-sci

Giant Bandgap Pulsation Driven by Hotspot Breathing Phonons in a Flat-Band Solid

Wenjie Liu, Huaxin Wu, Jiyang Fan

The electronic bandgap of solids is conventionally viewed as a static property at a given temperature, with only weak and stochastic thermal fluctuations under equilibrium conditions. Here, using ab initio molecular dynamics and first-principles electron-phonon calculations, we reveal a pronounced room-temperature bandgap pulsation at about 7.8 THz in a perovskite-like flat-band solid, with a maximum peak-to-peak variation approaching 0.95 eV. This behavior originates from a dual selection mechanism: the A1g-like breathing branch couples much more strongly to the flat conduction-band edge than other phonon branches, while real-space phase selectivity distinguishes its hotspot gamma-point and finite-q components. Although finite-q modes retain appreciable microscopic coupling, their intercell phase shifts produce smaller-amplitude shorter-recurrence-period responses, leaving the unit-cell-synchronous gamma-point A1g component to dominate the fundamental-period bandgap pulsation. The resulting band-edge dynamics further modulates the optical response on femtosecond timescales. These findings demonstrate that an unexpectedly ordered electronic response can emerge from intrinsically disordered thermal lattice fluctuations.

AG-2026.08-1196

cond-mat.mtrl-sci

A nuclear-quantum-corrected machine-learning potential reveals quantum-enhanced hydrogen segregation at general grain boundaries in alpha-iron

Kazuma Ito

Atomistic descriptions of hydrogen diffusion and trapping at defects are essential for understanding hydrogen embrittlement. As the lightest solute in metals, hydrogen exhibits nuclear quantum effects that alter these processes even at room temperature. Explicit treatment of such effects is computationally demanding, limiting large-scale simulations of complex environments. Here, we use an Fe-H machine-learning interatomic potential (MLIP) based on the performant implementation of the atomic cluster expansion (PACE), covering diverse Fe-H environments, and relabel the training configurations underpinning its transferability with quantum mean forces from centroid-constrained path-integral molecular dynamics at 300 K. This yields a nuclear-quantum-corrected PACE (NQC-PACE) without additional density functional theory calculations. At parent PACE, NQC-PACE describes nuclear quantum effects on hydrogen trapping at vacancies, dislocations, surfaces and general grain boundaries, H-H interactions, and diffusion in alpha-Fe. Grand-canonical Monte Carlo/molecular dynamics simulations show nuclear quantum effects markedly enhance hydrogen segregation at general grain boundaries and trapping behaviour in closer agreement with experimental trends. This enhancement arises from selective quantum stabilisation of open, anisotropically soft local environments. Our framework uses finite-temperature quantum mean forces to relabel the configurational space covered by an MLIP, enabling large-scale analysis of complex materials where light-element quantum effects matter.

AG-2026.08-1227

cond-mat.mtrl-sci

Beyond Local Berry Geometry: A First-Principles Finite-Momentum Theory of Electronic Position

M. S. Si, Y. Q. Li, G. P. Zhang

Electronic position controls how a crystal polarizes and responds to an external field. In crystals, it is usually described through local changes of electronic states in momentum space. This Berry framework has reshaped modern solid-state physics, but strong fields drive electrons across a finite momentum range, where coherence between different momenta becomes part of the response. Here we establish a first-principles theory of electronic position at finite momentum that retains this missing information. We show that unequal-momentum coherence can cancel under spatial averaging and still produce polarization, forming a coherence dipole. We obtain the matrix directly from material wave functions, without model bands or fitted transition elements. In Si, the finite-momentum geometry sets a material momentum scale. Comparing this scale with the momentum change driven by the field predicts when finite-momentum physics becomes active. Crossing the scale strongly reorganizes the fifth and higher harmonics, showing that momentum-space geometry, rather than emitted photon energy alone, controls the nonlinear response. HHG is the first demonstration, but the theory applies whenever driven electrons explore a finite momentum range. It therefore extends quantum geometry beyond the local Berry limit and provides a general basis for predicting field-driven phenomena in real materials.

AG-2026.08-1371

cond-mat.mtrl-sci

Individual Vanadium Dopants Form Deep In-Gap States in Monolayer WS2

Tianhui Zhu, Carlos A. Gonzalez, Shihao Tu, Søren Tornøe, Ivan Pelayo, Dong-Rong Wu, Zhehao Ge, Hem Prasad Bhusal, Kenji Watanabe, Takashi Taniguchi, Nobuhiko P. Kobayashi, Yuan Ping, Jairo Velasco, Aiming Yan

Point defects in atomically thin materials have a strong impact on physical properties and those that induce in-gap states are advantageous for quantum information science and engineering (QISE). However, dopant engineering consisting of well-controlled synthesis and robust identification of in-gap states is challenging. In this work, we addressed this challenge by first using finely tuned chemical vapor deposition to incorporate vanadium dopants into a monolayer WS2 (V-WS2). Next, we utilized a suite of scanned probe microscopy techniques to identify and characterize individual dopants. The latter included conductive atomic force microscopy (cAFM), low temperature scanning tunneling microscopy and spectroscopy (STM/STS), and scanning transmission electron microscopy and unambiguously revealed that vanadium dopants form deep in-gap states 0.35 eV above the valence band maximum in V-WS2. Our experimental results are well supported by first principles calculations and taken together demonstrate that V-WS2 is a promising platform for QISE applications.

AG-2026.08-1058

cond-mat.mtrl-sci

Thermal transport in crystals: from the quantum Dyson equation to mesoscopic phonon hydrodynamics

Enrico Di Lucente, Michele Simoncelli, Nicola Marzari

Thermal transport in dielectric, non-magnetic crystals is mediated by quantized lattice vibrations, which drift and interact when driven out of equilibrium by a temperature gradient. This phenomenon can be described at multiple theoretical levels, ranging from fully quantum descriptions to semiclassical and mesoscopic continuum approaches. This review rigorously discusses the theoretical steps and approximations connecting these levels, bridging quantum phonon Dyson and Kadanoff-Baym equations and semiclassical Boltzmann transport formalism, and discussing the coarse-graining procedures that yield mesoscopic viscous heat equations for non-diffusive, hydrodynamic heat transport in devices. We show how the Guyer-Krumhansl and dual-phase-lag equations emerge as special linear-isotropic-band and inviscid limits of the viscous heat equations, respectively; most importantly, we demonstrate that these equations predict not only Poiseuille flow and second sound, but also more exotic effects such as negative thermal resistance, steady-state thermal backflow and vortices. We highlight how combining these frameworks with first-principles simulations connects microscopic phonon physics to observable non-diffusive heat-transport phenomena and guides their detection, amplification, and control. We recast the viscous heat equations in terms of Helmholtz and biharmonic equations solved analytically, and use this to discuss similarities and differences between the macroscopic behavior of the phonon fluid and other hydrodynamic systems, such as classical and electron fluids, focusing on compressibility, vorticity, and their influence on phonon hydrodynamics. We conclude with a roadmap to generalize the tools used to describe phonon hydrodynamics to other quasiparticles, motivating future advances in collective quantum transport phenomena in solids.

AG-2026.08-1099

cond-mat.mtrl-sci

Magnetic reconstruction of the altermagnet α-MnTe(0001) surface driven by ligand holes

Tomonori Tanaka, Yoshihiro Gohda

We show from first principles that the altermagnet α-MnTe reconstructs its magnetic order at the (0001) surface, into a stacking with a ferromagnetic outermost Mn bilayer that is lower in energy than the bulk-continued one. The clean termination leaves a ligand hole in the Te dangling bonds. What drives the reversal is the part of the hole reaching the Te that mediates the exchange within that Mn bilayer. The computed constant-energy contours are consistent with photoemission maps. Transport and spectroscopy on films are therefore sensitive to a surface magnetic order that is not the bulk one.

AG-2026.08-1100

cond-mat.mtrl-sci

A Unified Description of Electron-Phonon Coupling and Ion Migration in Metal Halide Perovskites

Bo Cai, Yan Yang, Yoshiki Sugai, Maddison Wiles, Dongxu He, Yang Yang, Junmin Xia, Shufen Chen, Carla Verdi, Siyu Chen, Nan Zhang, Ming-Gang Ju, Chao Liang, Julian A. Steele

The remarkable optoelectronic properties of metal halide perovskites are closely linked to their unusually soft and polar chemical bonds that enable both strong electron-phonon interactions and ion migration. Yet these two defining characteristics have largely been treated as independent consequences of the same underlying chemical bonding. Here we show that they originate from a common electronic-structure framework by developing a general description linking lattice dynamics, electron-phonon coupling, and halide ion migration across representative Pb-based, Sn-based, and double perovskites. Spectrally resolved phonon-mode contributions demonstrate that the low-frequency shearing modes dominate halide migration, whereas high-frequency stretching modes govern carrier scattering through the Fröhlich interaction in all three compositions. We introduce an orbital hybridization descriptor to unify these findings, which connects metal-halide bonding characteristics with the migration barrier energies and Fröhlich coupling strengths, indicating a cooperative evolution of these two properties. These findings provide a generalized microscopic mechanism for simultaneously optimizing charge and ionic transport in soft semiconductors.

AG-2026.08-877

cond-mat.mtrl-sci

The electrical transport of intrinsic two-dimensional ferroelectric metal PtBi2

Dan Li, Liu Yang, Lei Li

Breaking the conventional stereotype that ferroelectrics are necessarily insulating, two-dimensional (2D) ferroelectric metals combine seemingly incompatible switchable electric polarization and metallic conductivity, providing a fertile ground for the discovery of novel electrical transport phenomena and the development of innovative electronic devices. Using the semiclassical Boltzmann equation and first-principles calculations, we systematically investigate the linear and nonlinear transport responses of the intrinsic 2D ferroelectric metal \ch{PtBi2} to an applied electric field. Our \textit{ab initio} molecular dynamics simulations reveal that it possesses a high Curie temperature reaching $800~\text{K}$. We propose that the crystal structure of its high-temperature paraelectric phase can be explicitly distinguished through simple measurements of the in-plane electrical conductivity. Quantitative calculations of the Edelstein effect and the intrinsic spin Hall effect demonstrate a sizable charge-to-spin conversion efficiency, highlighting its potential in spintronics. We also find that a Berry curvature dipole-induced nonlinear Hall effect emerges in uniaxially strained \ch{PtBi2}. Furthermore, we highlight the unique advantages of 2D ferroelectric metals in gate-controlled transport applications. Based on the domain wall scattering mechanism, we conceptually design a novel ferroelectric metal field-effect transistor (FEM-FET) capable of nonvolatile switching between high-resistance and low-resistance states under a gate voltage. Our work not only unveils the rich transport physics in 2D ferroelectric metals but also provides valuable insights into the design of next-generation nonvolatile memory and spintronic devices.

AG-2026.08-861

cond-mat.mtrl-sci

Beam Routing through Excitons in Transition Metal Dichalcogenide Monolayers

Yonas Lebsir, Jacob Terndrup Heiden, Jorge Barcia Rodríguez, Maria Papadopoulou, Kenji Watanabe, Takashi Taniguchi, N. Asger Mortensen, Sergii Morozov, Nicolas Ubrig

Routing light at the nanoscale typically relies on nanostructured surfaces to imprint directionality on the emission. Using low-temperature, angle-resolved cathodoluminescence spectroscopy, we show that the intrinsic excitonic transitions of a semiconductor can themselves produce routed emission. We probe monolayers of WSe$_2$, MoSe$_2$, and MoTe$_2$ and resolve the excitonic species of monolayer WSe$_2$ -- the bright exciton, the trion, and the spin-forbidden dark exciton -- through their distinct angular emission profiles. While the in-plane transition dipoles of the bright exciton and trion radiate predominantly toward the surface normal, the out-of-plane dipole of the dark exciton, inaccessible under normal-incidence optical excitation, produces a directional emission channel at large angles. We further tune the balance between neutral and charged exciton emission through the local dielectric environment. Our results establish dark excitons in TMD monolayers as a platform for directional light emission in compact photonic architectures without additional nanostructuring.

AG-2026.08-883

cond-mat.mtrl-sci

Optically Tunable Threshold Switching and Thermally Activated Transport in Planar Ag/MAPbI$_3$ Thin Single-Crystal Devices

Ofelia Durante, Valeria Demontis, Sebastiano De Stefano, Selene Matta, Adolfo Mazzotti, Daniela Marongiu, Emanuele Meloni, Elisa Pili, Fang Liu, Nicola Sestu, Angelica Simbula, Mauro Carta, Michele Saba, Andrea Mura, Massimiliano Di Ventra, Giovanni Bongiovanni, Antonio Di Bartolomeo

Halide perovskites have enabled major advances in optoelectronics, extending well beyond photovoltaics. Their mixed ionic-electronic conduction, once regarded as detrimental to device stability, is increasingly viewed as a functional degree of freedom for memory and neuromorphic-inspired devices, especially when coupled to external stimuli such as light. Specifically, single crystals are attractive models because they suppress grain-boundary effects and microstructural disorder that can mask intrinsic transport and interfacial mechanisms in polycrystalline films. Here, we report the growth of thin methylammonium lead iodide (MAPbI$_3$) single crystals by a space-confined method and their integration into planar two-terminal devices with directly deposited Ag contacts. At room temperature, the devices exhibit ultra-low dark currents ($10^{-13}-10^{-12}$ A) and negligible hysteresis in the dark. Under illumination, the current increases due to photogeneration and the I-V characteristics develop a pronounced polarity-dependent hysteresis and a threshold-like transition between two conductance states. Temperature-dependent dark measurements (300-400 K) show thermionically activated, contact-influenced transport and a weakly varying normalized hysteresis metric. Together with the back-to-back Schottky-diode analysis and control devices using more inert contact materials, these results support a transport model in which Ag/perovskite interfaces play a central role and the hysteretic response is influenced by coupled interfacial and ionic processes.

AG-2026.08-889

cond-mat.mtrl-sci

Strain-controlled magnetism and magnetoelasticity in monolayer NiPS$_3$ and CrPS$_4$

Balázs Nagyfalusi, Alvaro Bermejillo-Seco, Linde de Jong, Ritesh Das, Yaroslav M. Blanter, Herre S. J. van der Zant, Amador Garcia-Fuente, and Jaime Ferrer

We develop a first-principles framework for magnetoelastic coupling in two-dimensional magnets based on a strain-dependent Heisenberg model. In this approach, strain derivatives of the exchange interactions provide direct access to magnetostriction and to the magnetic renormalization of the elastic tensor, establishing a microscopic link between spin interactions and elastic response. We apply the method to monolayer NiPS$_3$ and CrPS$_4$, which exhibit contrasting magnetoelastic behavior. NiPS$_3$ shows weak and nearly isotropic spin-lattice coupling, consistent with a robust zigzag antiferromagnetic ground state. In contrast, CrPS$_4$ displays strong anisotropic coupling, leading to strain-driven transitions between spin-spiral and ferromagnetic phases and significant changes in the critical temperature and elastic response. Our results demonstrate a general route to quantify magnetoelastic effects in low-dimensional magnets and highlight CrPS$_4$ as a promising platform for strain engineering of magnetic order.

AG-2026.08-672

cond-mat.mtrl-sci

Cell Natural Orbitals in Quantum Materials

Harshitra Mahalingam, Nishchhal Verma, Daniel Muñoz-Segovia, Raquel Queiroz

Understanding correlated quantum matter starts with an accurate model of the single-particle states that interact at low energies: their dispersion, band geometry, orbital content and charge density. In many cases, notably the topological bands of moire materials, it is not straightforward to find a real-space description with a few local orbitals that accomplishes this task. Here we provide a systematic way to identify the local degrees of freedom that best capture the band geometry and charge density of any chosen set of bands. We use the unit-cell one-particle reduced density matrix (UC-1pRDM), obtained by restricting the projector onto the target bands to a single unit cell. Its eigenstates, which we call cell natural orbitals (CNOs), form a local, symmetric basis uniquely determined by the Bloch wavefunctions and the choice of real-space partition. Their eigenvalues measure the occupation of each CNO in the target bands, quantifying entanglement across unit-cell boundaries and the importance of multi-orbital character. A set of CNOs that maximizes total spectral weight and reproduces the target band symmetries provides optimal trial states for Wannierization. We exemplify this by constructing a lattice model for twisted bilayer WSe$_2$ that tracks the orbital content across twist angles.

AG-2026.08-408

cond-mat.mtrl-sci

AES-Debye: an Accurate, Efficient, and Scalable Engine for Debye Scattering Calculations

Navid Panchi, Sebastian Kuckuk, Markus Wittmann, Michael Engel, Alberto Leonardi

Total scattering models are essential for characterizing the structure and disorder of nanoscale materials. The Debye scattering equation (DSE) provides a rigorous route to elastic total scattering, but its direct evaluation is computationally demanding because pairwise contributions must be accumulated at every scattering vector, whereas common acceleration strategies based on binned pair-distance distributions or gridded fast Fourier transforms can introduce discretization and aliasing artifacts that compromise diffuse-scattering accuracy. Here, we present AES-Debye, an accuracy-preserving DSE framework that aggregates pair distances into a pair distribution function (PDF) using corrected bin centers and numerically robust accumulation to suppress discretization and summation errors. A data-locality-aware parallel design enables efficient execution on CPUs and GPUs. We demonstrate strong scalability by computing a high-resolution total scattering profile for a system of 90 million atoms, $(0.1,μ\mathrm{m})^{3}$, in minutes on a distributed-memory CPU platform. These capabilities extend accurate elastic total scattering calculations to large, complex systems while simultaneously providing high-resolution PDFs for downstream structural analysis.

AG-2026.08-418

cond-mat.mtrl-sci

Time-resolved study of carbonization and growth of ultrathin 3C-SiC on Si(111) under ultra-high vacuum

Pranjali Jadhao, Mojdeh Fallahpour, Josef Polčák, Eva Kolíbalová, Michal Horák, Jan Michalička, Petr Bábor, Stanislav Voborný, Tomáš Šikola

The early-stage formation of silicon carbide (SiC) on Si(111) by ethylene exposure under ultra-high vacuum (UHV) was investigated to resolve the time-dependent chemical and morphological evolution of an ultrathin layer. Clean Si(111) substrates were exposed to C$_2$H$_4$ at 800 °C for 2 min to 4 h, and the surfaces followed by in-situ X-ray photoelectron spectroscopy (XPS) and ex-situ AFM, SEM, AES, SIMS and TEM. Si 2p and C 1s peak analysis shows the progressive conversion of elemental silicon into a carbidic Si-C phase, the SiC fraction overtaking the elemental component between 120 and 160 min and saturating near 80-81% beyond 180 min, leaving about 19-20% residual elemental silicon. Correlative SEM and AFM reveal a parallel morphological progression, from sparse isolated islands to a coalesced, near-continuous layer. AES depth profiling confirms carbon incorporated into the near-surface region rather than weakly adsorbed as contamination, assigning the islands to early SiC nuclei. TEM confirms the zinc-blende lattice and the presence of cubic silicon carbide (3C-SiC). Together, these results provide a time-resolved picture of SiC nucleation, coalescence and layer growth on Si(111), relevant to 3C-SiC heteroepitaxy, and can be utilized in the optimization of SiC/Si(111) templates for growth of III-nitride and other carbide systems on silicon (e.g. Mo$_2$C).

AG-2026.08-294

cond-mat.mtrl-sci

Anharmonic dephasing in the electron-phonon interaction

Mingran Kong, Bartomeu Monserrat

Electron-phonon coupling has been a central topic in condensed matter physics for decades, and firstprinciples methods have demonstrated remarkable success in quantitatively capturing its role in a wide variety of physical phenomena and materials. Conventional calculations of electron-phonon coupling typically assume that phonons have infinite lifetimes, but phonons can exhibit finite lifetimes due to anharmonic phonon-phonon interactions. In this work, we derive an expression for the electron-phonon coupling scattering rates including the effects of anharmonic three-phonon interactions, which lead to phonon dephasing and finite phonon lifetimes. We also describe a first-principles implementation of this anharmonic electron-phonon coupling which can be seamlessly integrated within existing workflows for the evaluation of electron-phonon and phonon-phonon coupling interactions. Finally, we present calculations of electron-phonon scattering rates including phonon dephasing in a range of materials, and discuss the different microscopic mechanisms by which anharmonic phonons influence electron-phonon coupling. This study establishes the importance of finite phonon lifetimes in the evaluation of electron-phonon coupling, and provides a platform to explore these effects in a wide range of materials and phenomena.

AG-2026.08-432

cond-mat.mtrl-sci

High Thermal Conductivity of Back-End-of-Line Compatible Diamond Films

Jinwen Liu, Chufei Cheng, Feifei Tan, Jinquan Zhang, Di Lu, Bing Dai, Jiaqi Zhu, Runsheng Wang, Zhe Cheng

Back-end-of-line (BEOL) thermal management requires electrically insulating heat-spreading dielectric that can be integrated within thermal budgets below 400 C. Here, we report polycrystalline diamond films grown directly on Si at a substrate temperature below 400C. Two films with average thickness of 760 and 1000 nm were characterized by Raman spectroscopy, scanning electron microscopy (SEM), and time-domain thermoreflectance (TDTR). Raman spectra show a sharp diamond peak with minor signatures of non-diamond carbon, while SEM reveals lateral growth and large grain size. Temperature dependent TDTR measurements were performed from room temperature to 100C. Sensitivity analysis indicates that the sensitivity of cross-plane thermal conductivity is comparative to the in-plane thermal conductivity. Accordingly, the films were analyzed using an isotropic thermal model by considering the nearly-isotropic grain structure, yielding room temperature effective thermal conductivity of 73 and 86 W m-1 K-1, respectively. These values are about two orders of magnitude higher than those of conventional dielectric materials and demonstrate the potential of diamond films grown at low temperatures as dielectric heat-spreading layers.

AG-2026.08-166

cond-mat.mtrl-sci

Tuning the Optoelectronics of Mixed-Semiconductors through the interplay of Quantum confinement and Stoichiometry Engineering

Kanha Ram Khator, Anupam Manna, Amlandeep Nayak, Pravat Nayek, Prasenjit Mal, Satyaprasad P Senanayak

All-inorganic cesium lead bromide (CsPbBr3) nanocrystals (NCs) have established themselves as an emerging semiconductor for next-generation optoelectronic technologies due to their unique combination of properties, such as near unity photoluminescence quantum yields, narrow color pure emission, and exceptional defect tolerance. Although size-dependent optical signatures of these NCs are well reported, the complexity of mixed ionic-electronic transport remains largely unexplored. In this study, we provide a comprehensive analysis of size-dependent charge transport by decoupling ionic and electronic transport dynamics through carefully designed transient current and space charge limited current measurements. By employing NCs of different sizes ranging from 5.6 nm to 11.3 nm in thin films, we provide a comprehensive understanding of quantum confinement effects and related synthetic chemistry. Contrary to popular beliefs of quantum confinement and band gap broadening, our results demonstrate that the smallest NCs exhibit the most efficient transport characteristics, evidenced by the lowest activation energy (hole activation energy = 78 meV) for hole transport and the highest barrier for vacancy-mediated ion migration (ion activation energy = 370 meV). This work paves a way forward for perovskite-based efficient quantum devices, by demonstrating that moving into a strong quantum confinement regime, a superior charge transport can be facilitated, when supported by carefully tailored stoichiometry.

AG-2026.08-168

cond-mat.mtrl-sci

Interface Engineering of Helium Confinement in Argon-Preplated MCM-41 Nanopores

Rahul Soni, Nathan S. Nichols, Sutirtha Paul, Garfield Warren, Paul Sokol, Adrian Del Maestro

Atomic-scale modification of mesopore interfaces provides a route to tune the confinement experienced by adsorbed fluids, but how a specific interface preparation translates into the resulting microscopic confinement potential remains unclear. Here, we show that preplating MCM-41 with an argon monolayer modifies the effective pore interface by occupying strongly attractive regions of the heterogeneous silica surface and screening its atomic-scale corrugation. Grand-canonical Monte Carlo simulations of argon adsorption, low-temperature molecular dynamics, and helium test-particle insertion are combined with adsorption isotherms and neutron-scattering measurements to characterize the preplated pore at the atomic scale. Helium test-particle insertion calculations show that the modified interface shifts the helium adsorption minimum to an annular region inside the pore and produces a confinement landscape dominated by a smooth radial component. The resulting radial confinement potential can be described by a continuum cylindrical model, providing microscopic support for the effective potential used in earlier quantum Monte Carlo studies. Residual corrugation persists over multiple spatial scales and is accurately captured by a Gaussian process surrogate. These results demonstrate how atomic preplating can tailor nanopore confinement and provide an experimentally constrained microscopic potential for predictive studies of confined quantum fluids.

AG-2026.07-2579

cond-mat.mtrl-sci

Ferroelectric switchable altermagnetic-like compensated ferrimagnets with charge ordering

Xinyu Yang, Shuai Dong

Unconventional collinear magnets with almost zero magnetization but prominent nonrelativistic spin-splitting, such as altermagnets, can inherit the advantages of both ferromagnets and antiferromagnets. By incorporating more degrees of freedom such as ferroelectricity and charge ordering, these unconventional magnets can be even more interesting and functionalized. With this design principle, the Fe$_3$O$_5$ monolayer is predicted to exhibit a hybrid spin-splitting mechanism, with the superposition of the altermagnetic-like $k$-path alternating splitting and ferrimagnet-like Zeeman splitting. Benefiting from the hidden magnetoelectricity based on the spin-charge coupling, such spin-splitting can be fully switched by an electric field. Its conductivity is highly spin-polarized, with a polarization ratio above $99\%$, comparable to half-metals but with zero magnetization.

AG-2026.07-2272

cond-mat.mtrl-sci

Laser induced optical reconfiguration in Ge_Sb_Te Films with composition dependent response

M. Zhezhu, A. Vasilev, M. Sukiasyan, A. Kutuzyan, N. Anosov, M. Yaprintsev, D. A. Ghazaryan, H. Gharagulyan

Phase change Ge_Sb_Te (GST) materials exhibit pronounced optical contrast and tunability driven by structural transformations, enabling a diverse range of photonic and optoelectronic applications. GST materials undergo reversible amorphous crystalline phase transitions during which the refractive index and extinction coefficient increase significantly in the crystalline phase across a broad spectral range. However, a systematic correlation between local composition, crystalline microstructure, and broadband optical response within as deposited crystalline GST films has not been established, particularly for films spanning various compositions within a single growth process and in the absence of amorphous-crystalline transitions. Here, we report a systematic study of composition resolved optostructural property relationships in as-deposited crystalline GST films spanning Ge3Sb2Te6, Ge2Sb2Te5, and GeSb2Te4 within a single CVD process, avoiding intermediate phase transitions. This enables direct correlations between composition, microstructure, morphology, and broadband optical response across 400-1700 nm. Specifically, the compositional gradient results in a shift of the absorption minimum from 815.9 nm to 889.8 nm, accompanied by a 5.9 fold change in the intensity, reflecting the strong dependence of optical behavior on composition and microstructure. We further show that femtosecond laser irradiation enables spatially selective tuning of the optical response. These findings establish crystalline GST films as a platform for broadband-tunable, spatially programmable photonic elements, controllable through both compositional design and localized laser processing.

AG-2026.07-2311

cond-mat.mtrl-sci

A Catalogue of Topological Moiré Bands in Twisted Semiconductors

Jiaheng Li, Yan Zhang, Jiaxuan Liu, Caiyuan Ye, Tiannian Zhu, Zhong Fang, Hongming Weng, Quansheng Wu

Twisted two-dimensional semiconductors provide a route to flat and topological moiré minibands, but systematic principles for organizing their material dependence have remained unclear. Here, we establish a high-throughput framework that integrates structural relaxation, first-principles electronic structure calculations, and moiré band topology. We apply this framework to 43 experimentally realized monolayers and 91 symmetry-inequivalent bilayer prototypes, yielding over 1,000 angle-resolved moiré electronic band structures. This database reveals that the low-energy moiré electronic structure is organized primarily by the valley character of the parent band edge together with stacking symmetry. In $Γ$-valley systems, the miniband width usually follows a nearly quadratic twist-angle scaling, consistent with a folding-dominated kinetic-energy scale. In $K$-valley systems, stacking-controlled interlayer hybridization governs whether parent Berry curvature is redistributed into isolated valley Chern minibands. By contrast, $M$-valley systems form a more material-specific class associated with anisotropic and symmetry-constrained band folding. The same valley-and-stacking hierarchy rationalizes the emergence or suppression of $\mathbb{Z}_2$ minibands, and surface termination in Janus bilayers provides a microscopic knob for changing the relevant valley character. These results establish a materials-level organizing principle for designing flat and topological moiré bands in twisted semiconductors.

AG-2026.07-2321

cond-mat.mtrl-sci

Interaction-driven electronic ferroelectricity in van der Waals heterostructures

Ziying Wang, Ana Vera Montoto, Mohammad Amini, Yuxiao Ding, Jose L. Lado, Robert Drost, Adolfo O. Fumega, Peter Liljeroth

Strong electronic correlations in narrow-band systems provide a promising route to realize emergent quantum phases. While ferroelectricity in van der Waals materials is typically associated with inversion symmetry breaking driven by lattice distortions, interlayer sliding, or moiré reconstruction, the possibility of generating ferroelectricity directly from electronic interactions remains largely unexplored. Here, using molecular beam epitaxy, scanning tunneling microscopy, and ab initio calculations, we investigate two stacking geometries of bilayer 1T-TaSe$_2$, A-C and A-C$'$, formed by coupled Star-of-David charge density wave phases. We show that both stackings realize quasi-one-dimensional interacting chains, but are governed by distinct interaction mechanisms. In the A-C stacking, strong interlayer hybridization leads to dimerization and the formation of a band insulating state. In contrast, the A-C$'$ stacking is dominated by interlayer Coulomb interactions, producing a spontaneous charge imbalance between layers that gives rise to an out-of-plane ferroelectric polarization. Furthermore, we demonstrate that ferroelectric and antiferroelectric interchain configurations can be stabilized and electrically switched by an external field. Our results prove that bilayer 1T-TaSe$_2$ is a platform for interaction-driven electronic ferroelectricity, establishing an overlooked family of charge-ordered correlated states in 1T-TaSe$_2$ multilayers.

AG-2026.07-2247

cond-mat.mtrl-sci

Recrystallisation phenomena in an ultrafine-grained Al-Mg-Si alloy revealed by correlative in situ EBSD and TEM heating

Moritz Theissing, Sandra Gonzaga, Patrick Willenshofer, Thomas M. Kremmer, Stefan Pogatscher, Stefan Mitsche, Frank F. Sene, Matheus A. Tunes

Ultrafine-grained (UFG) aluminium alloys are promising lightweight structural materials for space applications, where a high grain-boundary density can act as sinks for irradiation-induced defects. Their deployment, however, is contingent on thermal stability: aluminium components in low-Earth orbit can reach $\sim$200 $^\circ$C under solar irradiation, close to where severely deformed aluminium alloys recrystallise. Accurate, bulk-representative determination of recrystallisation onset is therefore essential, yet conventional in situ transmission electron microscopy (TEM) heating is compromised by thin-film effects, ambiguous grain-boundary contrast, and small sampling volumes. Here, a UFG AA6061 (Al-Mg-Si) alloy produced by high-pressure torsion was studied by a direct comparison of in situ TEM heating and in situ electron backscatter diffraction (EBSD) heating, complemented by differential scanning calorimetry (DSC), analytical scanning transmission electron microscopy (STEM-EDX) and microhardness. In situ EBSD sampled $\sim 10^{3}$ grains from bulk material and resolved the microstructural evolution into sequential recovery, recrystallisation and grain-growth regimes, placing the onset of instability at $\sim$198 $^\circ$C. Calorimetry, microhardness and nanoscale elemental mapping showed that grain refinement suppresses GP-zones formation and shifts precipitation to lower temperatures, with precipitation neither retarding recrystallisation nor restoring strength once the UFG structure is consumed. Revisiting the Brailsford-Bullough-Hayns sink-strength theory with a KAM-informed, temperature-dependent internal sink strength, we show that the grain-boundary sink strength collapses as recovery and recrystallisation proceed. We establish in situ EBSD heating as an in operando method for bulk-representative determination of microstructural instabilities in advanced metallic systems.

AG-2026.07-1821

cond-mat.mtrl-sci

Complete Hierarchy of Nonrelativistic Odd-Parity Spin Splitting in Collinear Magnets

Yichen Liu, Junxi Yu, Pu Zhang, Cheng-Cheng Liu

Momentum-dependent nonrelativistic spin splitting provides a symmetry fingerprint of collinear magnets and can govern unconventional electronic, magnonic, and transport phenomena. Whereas even-parity $s$-, $d$-, $g$-, and $i$-wave splittings in collinear magnets have been extensively studied, odd-parity counterparts remain unexplored beyond the $p$-wave and $f$-wave classes. Here, using group theory, we establish the complete classification of odd-parity spin splitting in collinear magnets. We show that, in addition to the $p$-wave and $f$-wave forms, $h$- and $k$-wave splittings with $\ell=5$ and $7$ are allowed, while $m$-wave splitting with $\ell=9$ constitutes the upper bound. We derive a complete mapping from crystallographic point-group irreducible representations to the lowest-order odd-parity basis functions and formulate the coupling rule between a symmetry-breaking axial field and the parent Néel order that selects the induced odd-parity class. We further construct minimal lattice models that realize $h$-, $k$-, and $m$-wave splitting. Guided by this classification, we screen the MAGNDATA database and show that circularly polarized light can drive the $\mathcal{PT}$-symmetric antiferromagnets Fe$_2$TeO$_6$ and MgFe$_6$Ge$_6$ into $h$-wave and $k$-wave phases, respectively, exhibiting the hallmark spin splittings in both electronic bands and magnon spectra. Symmetry analysis and Berry-curvature calculations show that collinear odd-parity magnets of both $h$- and $k$-wave allow an anomalous Hall response, whereas the $m$-wave class forbids it. Together, these results complete the partial-wave hierarchy of odd-parity spin splitting in collinear magnets and establish symmetry criteria for anomalous transport in the high-partial-wave classes.

AG-2026.07-1712

cond-mat.mtrl-sci

Sixteen-State Energy Mapping for First-Principles Four-Spin Ring Exchange: Validation on $La_2CuO_4$ and $SrFeO_2$

Xavier Rocquefelte, Peter Blaha

Four-spin ring (cyclic) exchange $J_{ring}$ is an essential ingredient of the Heisenberg spin Hamiltonian of cuprates and other square-lattice magnets, yet it has lacked the kind of direct, local first-principles extraction that the four-state method provides for bilinear exchange, $J$. We supply it by generalizing that method to a sixteen-state ($2^4$) scheme. Symmetry reduces the sixteen configurations to six or eight inequivalent energies, so the cost is modest. The derivation also shows that the conventional four-state magnetic coupling, $J$, is itself ring-renormalized, by $\pm 2 J_{ring} S^2$ with the sign set by the reference state. T-La$_2$CuO$_4$ confirms this quantitatively: three independent routes agree on $J_{ring}$ to $0.2\%$, giving $J_{ring}/J_1 = 0.25$, and a four-state $J_1$ quoted without naming its reference is wrong by $12\%$ in this material. The direct sixteen-state extraction itself proves reference-dependent, the Néel and ferromagnetic baths bracketing the mapping value: a fourth-order fingerprint of interactions beyond the pair-plus-ring model, which additional reference baths resolve into a bare $J_{ring}$ and a converging tower of six- and eight-spin loop couplings. SrFeO$_2$ ($S = 2$), with the same plaquette yet $J_{ring}/J = 0.006$, provides the negative control: a plaquette is necessary for ring exchange, far from sufficient. The complete workflow, including the band-gap and local-moment diagnostics that certify any such extraction, is implemented in the openly available Mag4 package, so that $J_{ring}$ costs no more effort to obtain than $J$.

AG-2026.07-1579

cond-mat.mtrl-sci

Phase-field modeling of TiO2 nanocarving via reaction with hydrogen-bearing gas

Alireza Seifi, Sheikh Akbar, Yanzhou Ji

TiO2 nanocrystals can be fabricated by carving the TiO2 bulk polycrystals using reductive H2-bearing gases, yielding single-crystal [001] nanowire arrays. However, the origin of the strongly anisotropic nanowire morphology during nanocarving remains largely unexplored. In this study, we formulate a 2-D phase-field model to investigate the TiO2 morphology evolution during nanocarving processes. The model incorporates TiO2 reduction reaction, Ti3+ diffusion, and anisotropies in surface energy, diffusivity and reaction rate. Through systematic simulations in both single- and poly-crystals, we elucidate the roles of different anisotropy factors in nanocrystal morphologies at different carving stages, identifying the strong reaction rate anisotropy as the dominant factor for experimentally observed nanowire morphologies. We further explore the effect of grain misorientation angle, generating a nanocarving morphology map to guide grain orientation control. This study provides insights into microstructure evolution mechanisms during nanocarving and guidances for related microstructure control.

AG-2026.07-1430

cond-mat.mtrl-sci

Foundry CMOS platform for multimodal quantum materials characterization

Sharad Kumar Yadav, Luca Nessi, Ondrej Dyck, Jinchen Wang, Bogdan Dryzhakov, Alex Melendez, Huan Zhao, Qian Song, Doha Amer, Cole Brabec, Saleh Alqazlan, Ruonan Han, Riccardo Comin, Stephen Jesse, Dirk Englund, Jawaher Almutlaq

Quantum materials experiments increasingly rely on microwave, electrical, thermal, optical, and structural probes, but these capabilities are typically assembled from custom hardware that limits reproducibility and scalability. Here we show that a commercial 65-nm CMOS process can be repurposed as a passive, foundry-manufacturable characterization platform by functionally partitioning its metal stack into microwave, thermal, and electrical subsystems within a 1 mm2 footprint. The integrated RF architecture enables cryogenic magnetic susceptibility measurements of Fe3GeTe2 heterostructures at 1.75 K without sample-specific fabrication. We further demonstrate NV-center optically detected magnetic resonance (ODMR) with >20% contrast at 4-9 dBm microwave power, reducing power requirements by 20-25 dB relative to conventional antenna-based approaches while maintaining sensitivities of 2-3 uT/sqrt(Hz). We additionally confirm compatibility with in-situ electron-beam imaging, showing no measurable degradation in image quality upon device operation. These results establish a scalable, foundry-manufacturable platform for multimodal quantum sensing and materials characterization.

AG-2026.07-1564

cond-mat.mtrl-sci

Localized crystallization of Ce:YIG thin films on Si using CO2 laser annealing for integrated nonreciprocal photonic device applications

Xinran Ji, Junxian Wang, Tianchi Zhang, Xuan Zhao, Di Wu, Zixuan Wei, Yizhi Chen, Jialong Wang, Lei Bi

Laser annealing (LA) technique has emerged as an effective method for localized crystallization of magneto-optical (MO) garnet thin films on semiconductor substrates. However, no studies have explored the crystallization and magneto-optical (MO) properties of cerium-substituted yttrium iron garnet (Ce:YIG, Ce1Y2Fe5O12) thin films for integrated photonic device applications using LA technique. In this study, we provide a comprehensive investigation into the laser annealing of Ce:YIG films deposited on SiO2 substrates and silicon nitride photonic waveguides for integrated nonreciprocal photonic device applications. Garnet phase was successfully observed in films grown on SiO2 substrates, and SiN waveguides with laser annealing of sputtered Ce:YIG films on top of a laser annealed Y3Fe5O12 seed layer. The magneto-optical (MO) properties of Ce:YIG films on oxidized Si substrates were found to be comparable to those prepared by rapid thermal annealing (RTA). A Mach-Zehnder Interferometer (MZI) type optical isolator based on Ce:YIG film on SiN was fabricated, exhibiting a saturation Faraday rotation of -2317.7 deg/cm and propagation loss of 188.2 dB/cm. Isolation ratio of 27.1 dB and insertion loss of 10.1 dB were achieved at 1552.7 nm wavelength.

AG-2026.07-1801

cond-mat.mtrl-sci

CuCrZr heat-sink irradiation performance reveals new challenges for thermonuclear fusion reactors

Thomas Barzic, Anna-Carina Seitlinger, Christoph Frühwirth, Edward McDonald, Jing Tang, Jonathan A. Hinks, Alexandr Zinovev, Dmitry Terentyev, Stefan Luidold, Cláudio G. Schön, Enrique Jimenez-Melero, Stefan Pogatscher, Matheus A. Tunes

Commercial fusion energy requires materials that survive intense neutron bombardment whilst extracting extreme heat loads for conversion to electricity. The CuCrZr alloy, the leading heat-sink material for fusion reactors, derives its strength from a fine dispersion of nano-precipitates formed during prime-ageing heat-treatment. Whether this precipitation-hardening strategy can withstand fusion-relevant irradiation remains untested. Here we show, combining in situ transmission electron microscopy under heavy-ion irradiation and He implantation with thermodynamic and transmutation modelling, that the hardening precipitates dissolve under two opposing kinetic regimes: ballistic dissolution dominates at low temperatures, whilst dissolution and re-precipitation dominate at high temperatures. Although the accelerated dose rates inherent to ion irradiation shift the balance between ballistic mixing and thermal back-diffusion relative to reactor conditions, precipitate degradation at both kinetic extremes indicates that the prime-aged microstructure is unlikely to remain unaltered under prolonged neutron exposure. He bubbles and Kr-rich voids nucleate once vacancies become mobile, and transmutation over five service years irreversibly redirects the alloy chemistry towards Ni-Zr intermetallics. These three independent mechanisms converge to challenge the strategy on which CuCrZr performance depends, suggesting that the long-term performance of age-hardenable Cu-based heat-sink alloys in fusion reactors warrants further assessment. Our findings reveal a new materials challenge for fusion reactor design and commercialisation: the need for new Cu-based heat-sink alloys able to retain engineered strength whilst their chemistry is irreversibly rewritten - thermodynamically and ballistically - by the fusion neutron spectrum.

AG-2026.07-1340

cond-mat.mtrl-sci

Orbital Hybridization Induces Giant Cubic Rashba Effect at Cu/WO$_{3}$ Interface

Md Aktar Hossain, Saikat Das

Harnessing Rashba spin-orbit interaction and related spintronic functionalities has traditionally relied on metallic surfaces or interfaces containing elemental heavy metals. Here, using first-principles calculations and Cu(001)/WO$_3$(001) as a model heterostructure, we show that interfacing a light metal, Cu, with a band insulator, WO$_3$, yields an interface state that exhibits a robust Rashba spin splitting arising from the interplay between linear and cubic Rashba effects. The spin splitting is driven by the strong spin-orbit coupling of W atoms and enabled by W-Cu orbital hybridization at the interface. The cubic Rashba contribution asymptotically grows with Cu thickness and can be explained in terms of cross-coupling between the vacuum/Cu and Cu/WO$_3$ interfaces. This interfacial cross-coupling, however, diminishes at larger Cu thicknesses, allowing us to extract the intrinsic cubic Rashba parameter, which has a giant value of approximately -1.93 eV $Å^3$. In contrast, the linear Rashba parameter is only weakly affected by this cross-coupling and varies from approximately 0.30 to 0.49 eV Å. We further show that sizable linear and cubic Rashba effects persist across several interface geometries and Cu surface orientations, including (110) and (111). Our work identifies the Cu/WO$_3$ interface as a novel light-metal/heavy-element-based oxide platform for exploring the rich spectrum of Rashba physics, including linear and nonlinear spin-orbit phenomena.

AG-2026.07-1346

cond-mat.mtrl-sci

Role of small-radius and high-electronegativity A-Site dopants in enhancing proton transport and stability of perovskite electrolytes

Hang Ma, Ying Liang, Tianxing Ma

The practical application of BaCeO$_3$-based electrolytes is limited by their poor chemical stability in proton-conducting solid oxide fuel cells. Commonly employed B-site doping strategies typically improve proton transport with limited improvement in stability. Recent experiments show that A-site Ca doping can simultaneously enhance both properties. Here, through first-principles calculations and mechanistic analysis of Ca-doped BaCeO$_3$, we identify the synergistic roles of small-radius, high-electronegativity A-site dopants in governing proton transport and chemical stability in perovskite electrolytes. We show that the higher electronegativity of A-site dopant weakens the A-O ionic bonding, facilitating oxygen-vacancy formation and enhancing proton uptake by increasing the basicity. This weakened A-O interaction also suppresses the formation of impurity phases and reduces the adsorption strength of acidic gases such as CO$_2$ and SO$_2$. The lattice contraction induced by the smaller ionic radius improves thermal stability and can enhance proton diffusion in systems where proton transfer is the rate-limiting step. Furthermore, we find that Ca surface segregation can mitigate grain-boundary resistance effects. Our results demonstrate the advantages of A-site Ca doping in Ba-based electrolytes, clarify the mechanisms by which small-radius, high-electronegativity dopants influence proton transport and chemical stability, and provide guidance for the design of high-performance proton-conducting electrolytes.

AG-2026.07-1132

cond-mat.mtrl-sci

Surface Phase-Field-Crystal-Helfrich model for out-of-plane deformations in thin crystalline sheets with lattice mismatch

Emma Radice, Ingo Nitschke, Marco Salvalaglio, Axel Voigt

Thin, flexible crystalline sheets exhibit unique elastic properties due to their ability to undergo out-of-plane deformations. Understanding this behavior requires a description that couples in-plane elasticity, out-of-plane deformation, and their coupling, taking the crystalline structure and its defects into account. We develop a multiscale description for these systems by extending the surface Phase-Field-Crystal-Helfrich model. The extension permits a spatially varying equilibrium lattice spacing, enabling the representation of localized lattice eigenstrain to mimic lattice mismatch in heterostructures. We validate the extended model against analytical predictions from classical Föppl-von Kármán equations for uniaxial compression and from Eshelby's inclusion problem. Using this validated framework, we then show how locally induced compressive stresses drive out-of-plane deformation in the sheets.

AG-2026.07-1128

cond-mat.mtrl-sci

Quantized Photocurrents in Gapless Topological Matter

Byunghoon Kim, Tenzin Norden, Mohammad Yahyavi, Kaustuv Manna, Tyler A. Cochran, Zi-Jia Cheng, Xian P. Yang, Yu-Xiao Jiang, Xiangyu Luo, Payman Kazemikhah, Areeq Hasan, Vladimir N. Strocov, Sergey Shilov, Ilya Belopolski, Claudia Felser, Md Shafayat Hossain, Rohit P. Prasankumar, Guoqing Chang, M. Zahid Hasan, Prashant Padmanabhan

The quantum Hall effect in gapped systems represents a defining signature of nontrivial topology. Realizing this principle in gapless matter has remained a central challenge in quantum materials. Chiral topological semimetals provide a unique platform to achieve this aim via symmetry-protected multifold crossings that act as Berry-curvature monopoles. When optical transitions are confined to a single multifold node, the resulting circular photogalvanic effect is predicted to be quantized in terms of the topological charge of the node. In real materials, however, this phenomenon remains experimentally elusive, obscured by trivial band transitions, the energy separation between the node pairs, and their relative positions with respect to the Fermi level. Here we observe a quantized circular photogalvanic effect in the chiral topological semimetal Rh0.95Ni0.05Si. Ni substitution opens a photon-energy window dominated by interband optical transitions at the Γ-point multifold node. This allows circularly polarized near- to mid-infrared pulses to drive a helicity-odd terahertz response that manifests three hallmarks of quantization: a sharp onset, a wavelength-independent plateau governed by the magnitude of monopole charge, and an abrupt cutoff imposed by Pauli blocking. Our work establishes an all-optical analogue for the quantum Hall effect and a new paradigm for topological quantization in gapless matter.

AG-2026.07-827

cond-mat.mtrl-sci

Direct writing of individual quantum dots

Weikun Zhu, Natalie Ngoh, Shelly Ben-David, Maxwell Conte, Teddy Hsieh, Sarah O. Spector, Tara Sverko, Patricia Jastrzebska-Perfect, Will Jack, Jinwoo Sim, Peter F. Satterthwaite, Farnaz Niroui

Quantum light sources capable of generating single photons are fundamental building blocks for photonic quantum technologies. In the ongoing search for an ideal quantum emitter, inorganic halide perovskite nanocrystals have emerged as a promising source of single photons. Their unique optical response, with an unmatched ease of synthetic tunability, stands out amongst the competing platforms. However, their stochastic dispersion in solution challenges the deterministic and stable integration of individual emitters with photonic structures that is required for practical technologies. Notably, resolution and material compatibility constraints make conventional top-down fabrication processes insufficient for such heterogeneous integration. Here, we report direct writing of perovskite quantum dots (QDs) with individual-emitter resolution. By inducing a nanoscale-confined formation volume using a thermal scanning probe method, we achieve site-selective synthesis down to a single atomic-scale QD with spectral tunability and < 25 nm spatial control. As a result, we demonstrate high-yield arrays of CsPbI3 single-photon emitters with narrow linewidths and high single-photon purity up to 98% at room temperature, performance consistent with that of their state-of-the-art colloidal counterparts. Through such deterministic control, we uniquely realize the precise, on-demand coupling of these emitters to photonic cavities, as evidenced by a measured enhancement in the spontaneous emission rate. This represents a key advancement toward addressing the longstanding integration obstacles of these materials. Overall, by combining the atomic-scale tunability of chemical synthesis with the spatial control of additive manufacturing, our work opens new emitter engineering strategies to realize the untapped potential of colloidal materials for next-generation quantum technologies.

AG-2026.07-851

cond-mat.mtrl-sci

Strain-controlled crystalline--amorphous transition and flat-band tuning in buckled silicon kagome

Chenhaoyue Wang, Amartya S. Banerjee

Electronic flat bands in an elemental two-dimensional material provide an attractive setting for electron interactions competing with suppressed kinetic energy. Here we propose a buckled silicon kagome lattice (SiKL), an unfunctionalized six-atom monolayer of bond-linked Si$_3$ triangles and dodecagonal pores. Its planar parent hosts a dispersionless Kohn--Sham band near the Fermi level but is unstable to out-of-plane distortions. Following three soft zone-centre phonons and relaxing displaced structures yields two nearly degenerate buckled forms. The high-buckling form retains a partially flat kagome-derived band near the Fermi level. Biaxial tension controls lattice dynamics and electronic dispersion: at 10% strain, the bandwidth decreases significantly, the density-of-states peak approaches the Fermi level, and the softest phonon hardens. At 315 K, $6\times6$ ab initio MD shows the unstrained network disordering while the strained network remains ordered, indicating finite-temperature metastability. Fifty-nanosecond classical MD of $36\times36$ sheets reveals a strain-controlled crystalline--amorphous transition and local-bonding crossover near 2% strain. Low-strain trajectories show gradual, two-stage disordering; higher strains undergo an abrupt, first-order-like collapse, with the transition temperature reaching approximately 600 K at 10% strain. An exploratory Ag(111) substrate model suggests epitaxial mismatch could supply comparable tension, retain a narrow SiKL band, and preserve crystalline order above room temperature. Unlike passivated or hybrid-lattice silicon kagome proposals aimed mainly at conventional semiconductors, SiKL is elemental and uses strain alone to couple thermal metastability, bond rearrangement, and near-Fermi flat-band tuning. Buckled SiKL is a candidate platform for strain-controlled flat-band and electronic correlation physics.

AG-2026.07-858

cond-mat.mtrl-sci

Anisotropic hot carrier relaxation mediated by electron phonon scattering in TiN thin films

Hemant Verma, Tzu-Yu Peng, Shyr-Shyan Yeh, Sheng-Chieh Huang, Pritam Sardar, Yang-Hao Chan, Yu-Jung Lu, Chao-Cheng Kaun

Crystal orientations can shape the ultrafast energy relaxations of transition-metal nitride thin films. Here, we investigate the orientation-dependent electron-phonon (e-ph) mediated relaxation in titanium nitride (TiN) thin films along the [100], [110], and [111] directions by combining first-principles calculations with ultrafast pump-probe transient absorption spectroscopy. Using maximally localized Wannier functions, we evaluate e-ph quasiparticle scattering lifetimes near the Fermi level and identify a clear anisotropy: The TiN [111] orientation exhibits a longer e-ph scattering lifetime (15.96 fs) than [100] (13.69 fs) and [110] (11.12 fs), indicating reduced intrinsic e-ph scattering strength. Furthermore, we grew quasi-epitaxial, orientation-controlled TiN thin films on MgO substrates. Pump-probe measurements reveals that the population-level relaxation (hot-electron cooling) time also depends on orientations, with [111] films showing a significantly slower decay (110 fs) than [100] (90 fs) and [110] (80 fs). We emphasize that the calculated few-femtosecond scattering lifetimes and the measured few-hundred-femtosecond cooling time respectively represent single-event scattering and collective cooling, yet they exhibit consistent trends. These results demonstrate that crystallographic orientation provides a practical and powerful route to tune e-ph-governed relaxation in TiN thin films, offering essential design guidelines for refractory plasmonic and energy-conversion platforms.

AG-2026.07-859

cond-mat.mtrl-sci

Anomalous Transverse Response and Multi-Field Ferrialtermagnetic-Ferroelectric Valve with CrSb Flakes

Long Zhang, Xinfeng Chen, Hongfei Liang, Jianting Dong, Fei Zou, Yi Yan, Guangqian Ding, Guoying Gao

Altermagnets combine the zero-stray-field of antiferromagnets with the spin polarization of ferromagnets, showing great potential for spintronic applications. Here, we propose ferrialtermagnetism as a distinct subclass of altermagnetic family, where symmetry-inequivalent altermagnetic sublattices possess nonidentical Neel vectors, preventing mutual cancellation of alternating spin splitting and conferring intrinsic robustness against perturbations. This concept is realized in the three-atomic-layer CrSb (110) flakes, which exhibits spin splitting of 344 meV, moderate uniaxial magnetic anisotropy, and high Neel temperature of 657 K. The magneto-optical Kerr and the anomalous Hall effects are observed. Integrating this ferrialtermagnetic CrSb with ferroelectric Sc2CO2 and Cu spacer, we design an ferrialtermagnetic-ferroelectric valve. This device displays equilibrium tunneling magnetoresistance and electroresistance of ~10^3%, and non-equilibrium magnitudes under bias, thermal, or light field reaches ~10^4% with high spin filtering of 90%. The negative differential resistance and photogalvanic effects, and photocurrent extinction ratio of 283.8 are achieved. These findings establish ferrialtermagnetism as a fertile platform for multi-field-controlled, ultracompact, and self-powered spintronics and electronics.

AG-2026.07-736

cond-mat.mtrl-sci

A Cluster-Based Model of the Spectrum of Erbium-Doped GdVO$_4$

Zachary H. Roberts, Masaya Hiraishi, Luke S. Trainor, Jevon J. Longdell

Experimental observations of rare-earth ions doped into an antiferromagnetic crystal show an enriched optical spectrum. In this paper we present a cluster-based model to describe erbium ions doped into a gadolinium vanadate (Er:GdVO$_4$) host crystal, wherein the erbium ion couples directly to its four nearest neighbour gadolinium ions, which in turn couple to the mean field of the rest of the crystal. Compared to previous models in the literature, the parameters used to fit this model are fewer in number, with clearer physical origins. Agreement with the experimentally observed optical spectrum of Er:GdVO$_4$ suggests that our model succeeds in capturing the most important interactions of the system, suggesting that it may be useful for predicting microwave-to-optical transduction in future experiments.

AG-2026.07-849

cond-mat.mtrl-sci

Nonlinear Tellegen limit

Abhinava Chatterjee, Nikhil Kalyanapuram

The Tellegen limit is the fundamental electromagnetic stability bound on magnetoelectric media. We show that nonlinear magnetoelectric coupling gives rise to a new Tellegen limit, which we term the nonlinear Tellegen limit. Unlike the linear Tellegen limit, which is fixed by material parameters, the nonlinear Tellegen limit is field-tunable -- a static electric or magnetic field drives the system toward electromagnetic instability at a material-specific critical field determined by the magnetic point group symmetry. The approach to this limit is accompanied by a field-tunable Faraday rotation that grows linearly with the applied field and is bounded from above by a universal maximum set by the nonlinear Tellegen limit -- beyond which the medium becomes electromagnetically unstable. We demonstrate the nonlinear Tellegen limit and the field-space stability phase diagram in two magnetically ordered material systems -- a d-wave altermagnet and an M-type hexagonal ferrite -- showing that the symmetry of the magnetic point group governs both the structure of the nonlinear magnetoelectric tensor and the resulting electromagnetic instability.

AG-2026.07-258

cond-mat.mtrl-sci

Acoustic-phonon-driven spin-lattice relaxation of the hBN boron vacancy in the sub-THz regime

Priyo Adhikary, Pramey Upadhyaya

The negatively charged boron vacancy center in hexagonal boron nitride is a premier candidate for quantum sensing, yet its performance is critically limited by longitudinal spin-lattice relaxation time ($T_1$). A microscopic understanding of spin relaxation in the high magnetic field regime remains elusive, as the relevant Zeeman transitions lie far below the optical phonon energies typically invoked to describe the relaxation process. Here, we apply an \textit{ab initio} acoustic mode spin-phonon relaxation theory to this problem and quantitatively reproduce the experimental magnetic field and temperature dependence of $T_1$ without empirical fitting parameters. We demonstrate that the relaxation dynamics are driven by a direct one-phonon emission and absorption process resonant with the Zeeman splitting. Furthermore, we identify the out-of-plane flexural phonon branch which is unique to two-dimensional hosts, as the primary source of decoherence, creating a distinct low-energy spectral function that facilitates spin relaxation. Our results provide a microscopic interpretation of the experimentally observed non-monotonic field and temperature dependence in two-dimensional quantum defect centers.

AG-2026.07-546

cond-mat.mtrl-sci

Non-Hermitian control of helicity-selective antiferromagnetic resonance

Masato Todani, Satoshi Iihama, Yuto Moritake, Takeo Kato

We study non-Hermitian antiferromagnetic resonance in an antiferromagnetic insulator/nonmagnetic metal junction with sublattice-dependent damping and spin-orbit torque. By formulating the linearized Landau-Lifshitz-Gilbert (LLG) equation as a 2x2 non-Hermitian eigenvalue problem, we derive the complex resonance frequencies, the exceptional-point condition, and the stability-threshold condition. We show that the largest absorption response is maximized by approaching the stability threshold from the stable side. Near the threshold on the stable side, the absorption spectrum exhibits strong enhancement and linewidth narrowing, together with pronounced helicity dependence in the sub-THz regime that can be switched by reversing the spin-orbit torque. We also confirm by solving the full LLG dynamics that crossing the threshold leads to gain and self-oscillation. These results identify the stability threshold as the key control principle for enhancing absorption and achieving polarization selectivity in the sub-THz/THz regime.

AG-2026.07-555

cond-mat.mtrl-sci

Fluctuation-Driven Enhancement of Spin-Orbit Torque near the Curie Temperature of Ultrathin Ferromagnets

Mateusz Szurek, Sergei Ivanov, Sergei Urazhdin

We investigate how magnetic fluctuations influence spin-orbit torque in ultrathin-film magnetic heterostructures whose Curie temperature $T_C$ is suppressed by confinement. Above $T_C$, the damping-like contribution to spin-orbit field is significantly enhanced while the field-like contribution is suppressed, with the two contributions exhibiting opposite field dependencies. We show that these behaviors are consistent with fluctuation driven mixing between the longitudinal and transverse interfacial spin conductances, which enhances absorption of transversely polarized spin current by the ferromagnet. This mechanism can be activated below $T_C$ by engineering the microscopic magnetic state and by harnessing spin current-generated short-wavelength magnons, suggesting a spintronic analog of heat-assisted magnetic recording.

AG-2026.07-560

cond-mat.mtrl-sci

Phonon-Mediated Thermal Transport in Nanocrystalline Silicon Using Machine-Learning Interatomic Potentials

Houssem Rezgui, Catalina Coll Benejam, Miguel Pruneda, Clivia M. Sotomayor Torres

Understanding phonon-mediated heat transport in structurally complex materials remains a central challenge for next-generation electronic and nanomechanical devices, where grain boundaries and interfacial disorder strongly limit thermal dissipation. Although classical interatomic potentials enable large-scale simulations, their limited transferability can lead to inaccuracies in vibrational properties and interfacial phonon scattering. In this work, we develop a machine-learning based framework for modeling thermal transport in bulk and nanocrystalline silicon by combining Gaussian approximation potential (GAP) and multi-atomic cluster expansion (MACE) models with lattice-dynamical calculations and non-equilibrium molecular dynamics (NEMD). Harmonic and anharmonic force constants derived from machine-learning interatomic potentials (MLIPs) are used within a unified Phonopy/Phono3py workflow to compute phonon dispersions, lifetimes, and lattice thermal conductivity, providing an internally consistent description of vibrational properties. In nanocrystalline silicon, NEMD simulations directly quantify the thermal boundary resistance associated with grain boundaries and reveal its sensitivity to interfacial roughness and the underlying interatomic description. Compared with the Stillinger-Weber and Tersoff potentials, the MLIPs provide a more accurate and internally consistent description of bulk and interfacial phonon transport, enabling more predictive modeling of nanoscale thermal transport in low-dimensional materials.

AG-2026.07-054

cond-mat.mtrl-sci

Electric-field effects on defect migration energetics in GaN

Farshid Reza, Hamdy Arkoub, Alexander S. Hauck, Adri C. T. van Duin, Miaomiao Jin

A predictive understanding of defect transport in GaN under operating electric fields is critical for assessing device reliability in high-power and radiation environments. In this work, a ReaxFF reactive force field for GaN is developed using a density-functional-theory training set that includes structural, thermodynamic, and defect properties. The force field yields various properties such as lattice parameters, cohesive energies, and defect formation and migration energies in close agreement with prior first-principles and experimental results. Under externally applied electric fields, we find that migration barriers can be strongly modulated, with changes that depend on defect type and field orientation. Notably, the electric fields do not simply linearly bias defect motion in GaN, but can anisotropically modify migration barriers through charge-lattice coupling, leading to nonlinear transport behavior. The response arises from field-induced partial charge redistribution and local lattice distortion. These results demonstrate that electric fields can complexly modify the defect migration landscape, providing new insight into defect transport in GaN under high-field conditions.

AG-2026.07-055

cond-mat.mtrl-sci

Topological Hall effect due to electron-skyrmion scattering

Arijit Mandal, Hareram Swain, B. R. K. Nanda, S. Satpathy

Electron scattering from chiral spin textures such as skyrmions is fundamental to the understanding of transport in more complex systems, including skyrmion crystals. Most of the previous studies have focused on the weak-coupling regime, where the exchange interaction is small compared with the electron energy. Real materials, however, often lie in the strong-coupling regime, which exhibits qualitatively different behavior. Using the Lippmann-Schwinger equation and Green's function formalism, valid for all coupling strengths, we uncover several new features in the scattering cross section, including Ramsauer-Townsend minima, pronounced intermediate-coupling resonances, and Landau-level resonances for skyrmions with larger winding numbers. These features strongly influence the topological and spin Hall conductivities, which depend sensitively on the incident electron energy. Our work provides important insights into the Hall transport in collective chiral spin textures such as the skyrmion crystal.

AG-2026.07-073

cond-mat.mtrl-sci

Atom-selective spin-polarized transport in a charge-ordered altermagnet

Liu Yang, Yuan-Yuan Jiang, Xiao-Yan Guo, Yi-Dong Liu, Xian-Zhe Chen, Wen-Jian Lu, Yu-Ping Sun, Ming Li, Ding-Fu Shao

Altermagnets provide a promising platform for spin-polarized transport without net magnetization, but their transport properties are usually discussed in terms of momentum-space spin splitting. Here, using first-principles calculations and quantum transport simulations, we show that the charge-ordered altermagnet $α$-Fe$_2$PO$_5$ exhibits a distinct form of real-space spin selectivity despite weak altermagnetic spin splitting near the Fermi level. The charge order creates inequivalent Fe$^{2+}$ and Fe$^{3+}$ sites within each sublattice, while the puckered C-type antiferromagnetic stacking suppresses inter-sublattice transport. As a result, electron and hole doping activate spin-polarized transport predominantly through Fe$^{3+}$- and Fe$^{2+}$-based channels, respectively. These atom-selective channels carry opposite spin polarizations on the two antiferromagnetic sublattices, giving rise to a globally compensated charge current with hidden Néel spin character. We further propose an all-in-one $α$-Fe$_2$PO$_5$ tunnel junction, where matching or mismatching atom-selective conduction channels yields orders-of-magnitude conductance modulation. Our findings establish a real-space design principle for atomically controlled spin functionality and spintronic devices.

AG-2026.06-2471

cond-mat.mtrl-sci

Giant perpendicular Edelstein polarization in 2D compensated magnets via bichromatic Floquet driving

Mohsen Yarmohammadi, Daegeun Jo, Marco Berritta, Libor Šmejkal, James K. Freericks, Peter M. Oppeneer

While unconventional $p$-wave magnets can generate nonrelativistic Edelstein polarizations, spin-group symmetries strictly forbid these responses in unconventional magnets with higher-order harmonics, such as $d$-wave altermagnets. Here, we demonstrate that combining Rashba spin-orbit coupling with bichromatic Floquet driving activates giant perpendicular Edelstein polarizations (PEPs) across 2D altermagnets and broader classes of unconventional spin-polarized magnets -- a feat monochromatic driving cannot achieve. By dynamically breaking two-fold rotational symmetry, the two-frequency drive (including bilinear, bicircular, and circular-linear configurations) induces a stray-field-free in-plane Zeeman-like field that generates orbitally dominated PEPs (0.5--1.5 $μ_{\rm B}$). This massive response is governed by universal selection rules tied to the system's magnetic parity and the second beam's harmonics. These emergent PEPs provide a powerful mechanism for perpendicular memory writing.

AG-2026.06-2310

cond-mat.mtrl-sci

3D Imaging of Complex Skyrmion and Hopf Topologies in an Extended Sample

I. Binnie, H. Fang, B. Shearer, A. Grafov, N. Jenkins, Y. Shao, C. O'Leary, Y. Liao, T. Feggeler, A. Oh, S. Yazdi, J. Zou, B. Wang, E-E. Cating, S. A. Montoya, D. Shapiro, J. Miao, H. C. Kapteyn, M. M. Murnane

Spin textures are key for emergent magnetic phenomena such as topological protection and underpin novel spintronic device paradigms based on racetrack memory, logic gates, and neuromorphic computing. Using a coherent diffractive imaging technique called vector ptycho-tomography, in combination with algorithms that are robust to noise, we image the 3D magnetic texture of skyrmion and Hopf topologies with no prior assumptions about the sample. This directly reveals experimentally for the first time an extended 3D skyrmion lattice, including the domain wall shape, topological charge, helicity, and Hopf index. Our findings demonstrate experimentally that dipole stabilized skyrmions in Fe/Gd multilayers exhibit barrel-shaped skyrmion tubes with a twisted helicity, transitioning from N$é$el-type winding at the surfaces to both clockwise and counterclockwise Bloch-type winding in the bulk, that can also be described as fractional hopfions. We image a lattice of 24 skyrmions with topological charge 1, average depth-dependent domain wall width of 23 to 40 nm, depth-dependent twisted helicity from $\pm$155$°$ to $\pm$30$°$, and fractional Hopf index of $\pm$0.3. Over 10 TB of data were analyzed to yield a fully-resolved 3D reconstruction over a >0.4 $μ$m$^3$ volume, with high fidelity down to the Nyquist limit of 8 nm. This method fills a key gap in the current landscape of magnetic imaging by enabling high-resolution, element-specific 3D reconstructions of full-field extended spin textures - offering a new route for exploring the topological complexity of magnetic materials in three dimensions.

AG-2026.06-2313

cond-mat.mtrl-sci

Investigation on the temperature dependence of substrate-induced in-plane uniaxial magnetic anisotropy in Ni thin films grown on 128° Y-cut LiNbO3

Kalani Perera, Morton Greenslit, Luke Doucette, Mauricio Pereira da Cunha, Nicholas S Bingham

We report the temperature dependence of the substrate-induced magnetic anisotropy in continuous Ni thin films deposited at room temperature using magnetron sputtering on a 128° Y-cut LiNbO3 substrate. Ultrathin films exhibit a pronounced temperature dependence in magnetization, with as-grown films showing isotropic behavior and an unconventional hysteresis branch crossing at relatively low temperatures, whereas no branch crossing is observed in annealed films over the investigated temperature range, indicating suppression of the underlying mechanism. Temperature-dependent magnetization measurements show that post-deposition annealing establishes uniaxial anisotropy with well-defined easy and hard axes, whose strength evolves with temperature due to the nature of residual strain governed by both lattice mismatch and coefficient of thermal expansion (CTE) mismatch between the Ni film and the 128° Y-cut substrate, independent of film thickness for both 5 nm and 100 nm films. The emergence of this anisotropy following annealing indicates enhanced magnetoelastic coupling at the film-substrate interface, as the magnetic response begins to follow the anisotropic strain imposed by lattice mismatch and CTE mismatch.

AG-2026.06-2315

cond-mat.mtrl-sci

Connection between the GKSL master equation and the Landauer formula

Misa Nozaki, Takatoshi Fujita

We derive a current formula within the Gorini-Kossakowski-Sudarshan-Lindblad (GKSL) master equation formalism for a non-interacting system, and identify the conditions under which it reduces to the Landauer formula.

AG-2026.06-2291

cond-mat.mtrl-sci

Giant and Broadband Circular Dichroism from Particle-Hole Symmetry Breaking in Weyl Semimetals

Xiangyu Jiang, Zeping Shi, Yuhan Du, Haonan Chen, Jiayu Wang, Wenbin Wu, Guangyi Wang, Congming Hao, Mingfan Yao, Mingsen Zhou, Xin Chen, Chenyao Xu, Zhongbo Yan, Cheng Zhang, Hai-Zhou Lu, Junhao Chu, Xiang Yuan

Circular dichroism originates from symmetry breaking of material structure, leading to differential absorption of left- and right-circularly polarized light. However, circular dichroism in most materials is inherently weak and spectrally narrow, especially in the mid-to-far infrared. Here, we uncover giant infrared circular dichroism in the magnetic-field-forced Weyl semimetal Mn(Bi,Sb)2Te4, driven by extreme particle-hole symmetry breaking. Helicity-resolved magneto-infrared spectroscopy reveals circular dichroism exceeding 3000 mdeg (~130 mdeg/nm) with above-degree response extending over the 6-13 μm spectral range. The optical resonances are enhanced by a strong band nesting effect intrinsic to the Landau levels of type-II Weyl dispersion. A symmetry-based kp model reproduces these magneto-infrared responses and demonstrates that magnetization-induced asymmetric spin-orbit coupling generates particle-hole symmetry breaking, suppressing spin-up, parity-even wavefunction components in the valence Landau band and thereby producing pronounced optical helicity selectivity. Our findings establish particle-hole symmetry breaking as an effective route toward helicity-resolved optical control in quantum materials.

AG-2026.06-2321

cond-mat.mtrl-sci

Thermal Rectification from Size-Dependent Phonon Confinement in Nanoparticle Assemblies

Megan J. Farrington, David J. Wasserman, Eden R. Josza, Alessandro Podestà, Alessio Zaccone, Mariia Sidorova, Alexej D. Semenov, Nicola Ludwig, Marcel Di Vece

Thermal insulation remains an important technological challenge across the vast number of applications, from living quarters to quantum technology. Here, we exploit the size-dependent modification of the phonon density of states arising from phonon confinement in nanoparticles to fabricate a simple phonon rectifier. The smaller of the two connected nanoparticles imposes stronger phonon confinement leading to rectifying phonon transport. This concept is extended to the macroscale by constructing two overlapping layers of differently sized nanoparticles, thereby realizing a macroscopic phonon diode. Following the localized heat deposition by laser light, the temperature profiles across a phonon-diode were measured by infrared imaging. Although the rectifying strength is moderate, the abundance of optimization possibilities makes this method promising for ultra-low volume thermal insulation at both the nano- and macroscale

AG-2026.06-2333

cond-mat.mtrl-sci

Harnessing electrostatics through temperature modulations to control ferroelectrics

Cameron A. M. Scott, Xabier Diaz de Cerio, Jorge Íñiguez-González

Temperature modulations provide an alternative method for dynamically controlling the ferroelectric state. In this paper, we use scale-independent Landau potentials and predictive atomistic simulations to explore how temperature modulation can harness the depolarizing field to obtain non-electrical poling. We further predict that temperature gradients can be combined with strain to induce persistent polar textures such as multidomain states.

AG-2026.06-2334

cond-mat.mtrl-sci

Thermoelectric response of a ferroelectric insulator

Ryo Iguchi, Takashi Teranishi, Sakyo Hirose, Ping Tang, Jun Kano, Gerrit E. W. Bauer, Ken-ichi Uchida

Thermoelectric effects enable the conversion between heat and electricity without moving parts. While conventionally associated with mobile charges, we report thermoelectricity caused by bound charges in the form of temperature changes measured by multi-harmonic lock-in thermography of a ferroelectric under an ac electric field. The observed temperature gradient depends on the field-induced displacement current, a Peltier effect in a dielectric material. Its coefficient exceeds 100 V around the ferroelectric-paraelectric phase transition, which is several orders of magnitude greater than reported values in conductors. Our findings uncover previously hidden functionalities of ferroelectric materials for thermal management by directional heat transport in ferroelectrics.

AG-2026.06-2335

cond-mat.mtrl-sci

Rate Programmable Ionic-Redox Switching with Tunable Volatility in CuCrP2S6

Suzanne Lancaster, Francesco Calavalle, Mayank Sharma, Lucia Olano-Vegas, Garen Avedissian, Tanweer Ahmed, Marco Gobbi, Beatriz Martin-Garcia, Beatrice Fraboni, Felix Casanova, Luis E. Hueso

Metal thiophosphates are emerging as a multifunctional material platform for neuromorphic electronics due to their accessible polar phases and ion dynamics on biologically relevant timescales. While resistive switching in these materials is frequently attributed to ferroelectric or antiferroelectric polarization, the intrinsic role of ion dynamics remains underexplored. Here, we isolate and demonstrate purely ion-driven resistive switching in paraelectric CuCrP2S6. Robust and reproducible resistive switching is observed in the absence of measurable ferroelectricity. The conductance can be tuned through both voltage amplitude and sweep rate, revealing a rate dependence characteristic of ion dynamics. The resulting resistance states exhibit controllable volatility, where switching rate determines the decay time constant of the readout current, attributed to ionic relaxation. Using either inert or reactive electrodes, we observe electrical evidence of solid-state redox activity associated with the interfacial reduction of native Cu+ ions, enabling controlled formation of filamentary conduction pathways. Analysis of this process allows extraction of the Cu+ diffusion coefficient, providing quantitative insight into the underlying transport kinetics. The understanding of ionic-redox based resistive switching in CuCrP2S6 is crucial for unleashing its full potential as a material platform for dual- or multi-mode operation.

AG-2026.06-1626

cond-mat.mtrl-sci

Anomalous magneto-optical response at $\mathrm{RuO_2 / WSe_2}$ van der Waals interface

Muhammad Hassan Shaikh, Abhijith Puthiya Veettil, Collin Maurtua, Dai Q. Ho, Subhash Bhatt, David T. Plouff, Malitha Gulawita, Kenji Watanabe, Takashi Taniguchi, John Q. Xiao, Anderson Janotti, Chitraleema Chakraborty

Ruthenium dioxide ($\mathrm{RuO_2}$) has been proposed as an altermagnetic candidate, although its magnetic ground state remains controversial. Here, we probe weak interfacial magnetic states at the surface of (001)-oriented $\mathrm{RuO_2}$ films using the magnetic proximity effect (MPE) in a van der Waals heterostructure consisting of monolayer tungsten diselenide ($\mathrm{WSe_2}$) atop $\mathrm{RuO_2}$. Temperature-dependent magneto-optical spectroscopy reveals an anomalous excitonic energy shift and a deviation from conventional Varshni behavior below 55 K that are absent in an encapsulated $\mathrm{WSe_2}$ control sample. The anomalous shift reverses sign upon field cooling with opposite magnetic field polarity, indicating a magnetic origin. Polarization-resolved measurements further show a nearly field-independent and fluctuating valley splitting in $\mathrm{WSe_2 / RuO_2}$ in strong contrast to the conventional linear Zeeman splitting observed in the control bare $\mathrm{WSe_2}$ sample. These results suggest that the valley states are governed predominantly by interfacial exchange fields associated with weak surface magnetic states in $\mathrm{RuO_2}$, which do not produce a conventional linear Zeeman response within the applied magnetic field range. Importantly, this approach enables direct optical probing of emergent surface magnetism without introducing an additional ferromagnetic layer, positioning MPE-based optical probing as a tool for investigating weak surface magnetism and offering new possibilities for studying magnetic materials with controversial magnetic states.

AG-2026.06-1645

cond-mat.mtrl-sci

Strain- and Electric-Field-Tunable Valley Polarization in Mo0.75V0.25Te2(Mo3VTe8) for Valleytronic Application

Md. Mostaqul Islam, Vivek Chowdhury, Md. Nure-Alam-Dipu, Ahmed Zubair

Valley polarization in 2D TMDs is promising for low-power valleytronic and spin-valley information processing, but time-reversal symmetry in pristine nonmagnetic TMDs keeps the K+ and K- valleys degenerate, limiting device applications. In this work, we investigated the structural stability, electronic properties, and tunable valley polarization of V-alloyed MoTe2 monolayer, Mo0.75V0.25Te2, using first-principles density functional theory (DFT) calculations. Substitutional alloying of MoTe2 with V introduced magnetic exchange interaction, which, together with spin-orbit coupling (SOC), lifted the valley degeneracy at the unequal valleys. The alloyed structure was found to be energetically and dynamically stable due to the absence of imaginary phonon modes. In pristine MoTe2, SOC produced spin splittings of 34.0 meV and 218.9 meV in the conduction bands and valence bands, respectively, but no valley polarization was observed. In contrast, Mo0.75V0.25Te2 exhibited spontaneous valley polarization of 37.3 meV in the conduction band and 78.2 meV in the valence band. The valley polarization was further enhanced by external electric fields and biaxial strain. A transverse electric field along the crystal c axis produced the maximum valley splitting of 132.8 meV in the valence band, whereas biaxial tensile strain increased the valence band valley splitting up to 160.8 meV. The maximum conduction band valley splitting reached 54.4 meV under 2% biaxial compressive strain. These results demonstrated that V alloying, combined with electric-field and strain engineering, provides an effective strategy for achieving large and tunable valley polarization in MoTe2. Thus, Mo0.75V0.25Te2 can be considered a promising 2D platform for tunable valleytronic device applications, such as transistors and sensors.

AG-2026.06-1308

cond-mat.mtrl-sci

Robust Spin Splitting and Strain-Controlled Optical Response in Monolayer CrC2N4 for Valleytronic and Optoelectronic Applications

Md. Samrat, Vivek Chowdhury, Sake Wang, Ahmed Zubair

Monolayer CrC2N4 recently emerged as a promising two-dimensional semiconductor, yet its spin-orbit-coupled (SOC) physics and strain-tunable optical response remained largely unexplored. Here, we investigated the electronic, valley, charge-transfer, and optical properties of pristine and biaxially strained monolayer CrC2N4 using first-principles calculations. The monolayer exhibited a direct band gap at the K/K' valleys. SOC produced valley contrasting out-of-plane spin polarization, yielding a moderate valence band spin splitting of 51.9 meV and a small conduction band spin splitting of 1.7 meV. Orbital-resolved analysis showed that the edge states were mainly governed by Cr-d and N-p hybridization, while Bader analysis indicated polar-covalent bonding through charge transfer toward N atoms. Biaxial strain in the range of -4% to +4% tuned the band gap from 1.987 to 1.421 eV and drove an indirect-to-direct gap transition near -1% strain. Tensile strain enhanced the Berry curvature and red-shifted the optical response toward the visible-near-infrared region. These results suggested monolayer CrC2N4 as a promising platform for strain-engineered valleytronic and optoelectronic device applications.

AG-2026.06-1095

cond-mat.mtrl-sci

Enhanced Photocurrent Response in Epitaxial 0.5PZT-0.5PFN Multiferroic Thin Films

Lucia Imhoff, Miguel A. Rengifo, Jose M. Caicedo Roque, Jessica Padilla-Pantoja, Jose Santiso, Marcelo G. Stachiotti, Myriam H. Aguirre

The exploration of novel multiferroic materials with strong coupling between ferroelectric polarization and photovoltaic effects is crucial for next-generation optoelectronic devices. In this study, we characterized highly oriented 0.5Pb(Zr0.52Ti0.48)O3-0.5Pb(Fe0.5Nb0.5)O3 multiferroic thin films grown by pulsed laser deposition on SrTiO3 (001) substrates with a SrRuO3 bottom electrode. The films exhibited excellent crystalline quality, with a single perovskite phase and (001) orientation. They displayed good ferroelectric properties (remanent polarization $\sim$17 $μ$C/cm$^2$, PUND; coercive field $\sim$150 kV/cm), alongside weak ferromagnetic behavior at room temperature (remanence 1.30 emu/cm$^3$; coercive field 90 Oe). Photovoltaic measurements demonstrated a robust, polarization-dependent photoresponse under 403 nm monochromatic laser illumination, achieving Jsc values between $\pm$20 $μ$A/cm$^2$. This compelling observation confirms the intrinsic coupling between ferroelectric polarization and photovoltaic effects, highlighting the considerable promise of these single-phase multiferroic thin films for advanced photovoltaic and optoelectronic memory applications.

AG-2026.06-869

cond-mat.mtrl-sci

Multilayer Screening of Double and Conventional Perovskite Solar Cells Using SCAPS-1D and Machine Learning: Optimization of ETL, HTL, and Absorber for High-Efficiency Architectures

Neda Nasiri, Seyed Mahdi Mastoor, Amirhosein Ahmadkhan Kordbacheh

The combinatorial design space of multilayer perovskite solar cells is vast, yet exhaustive experimental or computational screening of all possible material combinations remains impractical. Here, we integrate SCAPS-1D device simulations with machine learning to systematically explore 125 device architectures constructed from five electron transport layers (ETL), five absorbers (including lead-free double perovskites), and five hole transport layers (HTL). A representative subset of configurations is used to train a machine learning (ML) model, which predicts the power conversion efficiency (PCE) of the remaining unexplored structures. Leave-One-Group-Out cross-validation yields a Spearman rank correlation, demonstrating reliable ranking capability. SHAP (SHapley Additive exPlanations) analysis reveals that the HTL band gap, absorber band gap, and ETL electron affinity are the most influential descriptors, providing physical insights into interfacial recombination and charge extraction. The machine learning model identifies several high-performance configurations that are subsequently verified by full SCAPS-1D simulations. Among them, the device FTO/TiO$_2$/Cs$_2$AgBiBr$_6$/NiO/Ag achieves a PCE of 28.85%, and the ML-suggested structure FTO/SnO$_2$/Cs$_2$AgInBr$_6$/NiO/Ag exhibits 28.62%, outperforming a closely related literature architecture by approximately 4% absolute. Notably, eight of the top-11 structures employ the lead-free double perovskite Cs$_2$AgInBr$_6$. This work demonstrates that a physics-based, data-driven workflow combining SCAPS-1D, ML, and SHAP can accelerate the discovery of high-efficiency, environmentally friendly perovskite solar cells while providing transparent design rules. The approach is generalizable to other multilayer optoelectronic systems.

AG-2026.06-833

cond-mat.mtrl-sci

Residual stress gradient in a thin film within the dislocation pile-up theory

A. V. Druzhinin, C. Cancellieri

A model for predicting the residual stress gradient in a thin film segment is developed on the basis of the theory of dislocation pile-ups. The initial shear stress within the film is relaxed via the formation of a pile-up of screw dislocations against the impenetrable film-substrate interface. Plastic strain is related to the dislocation density, leading to a fundamental equation, which links the residual stress to this density. The distribution of dislocations within the pile-up for an arbitrary, non-uniform residual stress profile is derived analytically by applying the force balance condition. This results in a singular integro-differential equation for the residual stress profile. The equation is solved numerically by a collocation method for various initial stress distributions: constant, linear, parabolic, and exponential functions. The solutions demonstrate that the established residual stress profile strongly depends on the film segment's thickness-to-width ratio and the initial stress distribution. As this ratio increases, stress relaxation becomes more effective away from the film-substrate interface. In all cases, equilibrium requires a pile-up containing dislocations with both positive and negative Burgers vectors. The total number of dislocations and their density distribution vary significantly with the initial stress profile. This model provides a critical step towards more complex models of residual stress formation in constrained material systems, specifically, thin films.

AG-2026.06-891

cond-mat.mtrl-sci

Interfacial Coupling and Sparse Intercalation of 7-Atom-Wide Armchair Graphene Nanoribbons by N-Heterocyclic Carbene Monolayers

Dominik Lüthi, Lin Yang, Xiuling Yu, Ji Ma, Xinliang Feng, Carlo A. Pignedoli, Roman Fasel, Gabriela Borin Barin

Graphene nanoribbons (GNRs) synthesized on metal substrates experience electronic coupling and screening from the underlying surface, which, although often weak, can modify their observed properties and complicate their transfer to device-compatible substrates. Intercalation of GNRs by self-assembled monolayers (SAMs) offers a possible route to reduce this interaction. Here, we investigate the intercalation of 7-atom-wide armchair graphene nanoribbons (7-AGNRs) on Au(111) using N-heterocyclic carbenes (NHCs). Low-temperature scanning tunneling microscopy and spectroscopy, Raman spectroscopy, and density functional theory calculations reveal that the adsorption geometry of the NHCs strongly influences the intercalation yield for GNRs. Methyl-substituted NHCs form flat-lying dimers that partially intercalate the GNRs, producing locally decoupled segments. In contrast, bulkier isopropyl-substituted NHCs form upright monomers that embed the GNRs within the monolayer, preventing intercalation. The low intercalation yield indicates that lifting the nanoribbon from the Au surface is energetically costly. These results establish molecular adsorption geometry and packing as key parameters controlling intercalation at GNR-metal interfaces, with implications for the rational design of decoupling layers for GNR-based device integration pathways.

AG-2026.06-901

cond-mat.mtrl-sci

Roughness-robust surface altermagnetism in $PT$ antiferromagnets

K. D. Belashchenko

Surface altermagnetism extends spin splitting beyond bulk altermagnets through symmetry reduction at surfaces and interfaces. An existing classification applies to the local symmetry of atomically flat surface terraces. The present paper addresses the symmetry of macroscopic spin-momentum correlations that survive averaging over compensated rough surfaces. These correlations are governed by the surface antisymmetry Laue point group. Rough-surface altermagnetism is forbidden at any surface of a magnet whose antisymmetry space group contains antitranslations, and the classification therefore reduces to $PT$-symmetric antiferromagnets. By restoring all symmetries leaving the surface normal invariant, roughness can generate compensated surface altermagnets from uncompensated flat terminations, increase the surface symmetry, or suppress spin splitting. By combining bulk switchability with altermagnetic surface transport properties, roughness-robust surface altermagnetism in $PT$-symmetric antiferromagnets provides a route toward spintronic functionality.

AG-2026.06-902

cond-mat.mtrl-sci

Flower-like WO3-modified Vulcan carbon GDEs for photoelectro-Fenton process: Efficient ciprofloxacin degradation and mechanistic insights

João Paulo C. Moura, Vanessa S. Antonin, Caio Machado Fernandes, Aline B. Trench, Erica S. Conrado, Michell O. Almeida, Kathia M. Honorio, Renata Colombo, Rafael Sotana, Ana M. P. Neto, Mauro C. Santos

Electrochemical H2O2 synthesis was investigated using a 3 percent WO3 C gas diffusion electrode GDE. The catalyst outperformed bare Vulcan carbon, generating H2O2 concentrations of 423, 586, and 916 mg L at 50, 75, and 100 mA cm2, respectively, maintaining around 70 percent current efficiency. This performance and lower energy consumption are attributed to the WO3 carbon synergistic effect. In electro Fenton EF applications, the WO3 C GDE achieved rapid initial ciprofloxacin CIP degradation of around 70 percent in 30 min, though limited later by slow Fe2 regeneration. Incorporating UV light photoelectro Fenton overcame this constraint, yielding complete CIP removal within 90 min, while a boron doped diamond BDD anode enhanced total organic carbon TOC mineralization to 66 percent. The proposed degradation mechanism proceeds via hydroxyl radical attack on the piperazine ring with or without defluorination and quinolone ring oxidation, with theoretical analysis confirming reduced environmental toxicity of the transformation products. Overall, WO3 C GDEs represent a highly efficient strategy for H2O2 generation and wastewater remediation.

AG-2026.06-429

cond-mat.mtrl-sci

Layer-parity-defined surface polarization in Nb$_3$Cl$_8$ for excitonic modulation at van der Waals interfaces

Xinyue Huang, Hansheng Xu, Yuchen Gao, Yushen Zhou, Zhijie Ma, Kenji Watanabe, Takashi Taniguchi, Zuxin Chen, Jianqi Huang, Jianpeng Liu, Teng Yang, Youguo Shi, Yu Ye

The intrinsic symmetry breaking in the breathing kagome lattice of layered Nb$_3$Cl$_8$ provides a unique mechanism for realizing electrically polar surfaces. In each monolayer, the trimerization of Nb atoms breaks inversion and mirror symmetries, generating an out-of-plane electric dipole. The AB-stacked $α$ phase arranges adjacent layer dipoles antiferroelectrically, leaving the uncompensated surface polarization strictly governed by layer parity. Here, using atomic force microscopy operated in Kelvin probe force microscopy mode, we directly visualize layer-dependent polarization states in exfoliated Nb$_3$Cl$_8$ flakes and resolve a pronounced odd-even oscillation of the surface electrostatic potential. Beyond this parity-locked antiferroelectric order, we further identify intralayer polar domains in which local atomic reconstructions of the breathing kagome network reverse the out-of-plane dipole of the surface layer, producing ferroelectric-like stacking configurations. By interfacing monolayer MoSe$_2$ with Nb$_3$Cl$_8$, we demonstrate that these surface-polarization textures effectively modulate adjacent excitonic emission through domain-dependent interfacial band alignment and charge transfer. Our findings establish Nb$_3$Cl$_8$ as an intrinsic layer-polarized van der Waals platform and show that layer parity provides powerful structural degree of freedom for programming excitonic and optoelectronic responses at van der Waals interfaces.

AG-2026.06-306

cond-mat.mtrl-sci

Chemical tuning of magnetic ordering and cryogenic magnetocaloric response in zircon-type Gd1-xErxVO4

Ming Zeng, Muqing Su, Liang Ming, Xiaolong Yang, Wang Chen, Lingwei Li, Hai-Feng Li

Chemical substitution offers an effective route to tune magnetic ordering and magnetocaloric performance in rare-earth oxides for cryogenic refrigeration. Here we investigate the structural evo lution, magnetic properties, and magnetocaloric effect of polycrystalline zircon-type Gd1-xErxVO4 (x=0, 0.1, 0.25, 0.5, and 0.75). Powder X-ray diffraction confirms that all samples crystallize in the tetragonal zircon structure without detectable impurity phases. Substitution of Gd3+ by the smaller Er3+ ion produces a systematic lattice contraction and modifies the magnetic behavior of the rare-earth sublattice. In particular, the magnetic ordering temperature is suppressed from 3.65(2) K in GdVO4 to 2.76(2) K in Gd0.9Er0.1VO4 , accompanied by a weakening of the spin-flop-like field-induced anomaly observed in the parent compound. A low Er concentration correspondingly improves the low-temperature magnetocaloric performance, with Gd0.9Er0.1VO4 exhibiting a max imum magnetic entropy change of 45.1 J kg-1 K-1 for mu_0 Delta H=7T. These results demonstrate that weak Er substitution effectively tunes the competition among exchange interactions, dipolar coupling, and magnetic anisotropy, optimizing the balance between magnetic ordering and available spin entropy in zircon-type rare-earth vanadates, which is crucial for developing efficient cryogenic refrigeration materials.

AG-2026.06-436

cond-mat.mtrl-sci

Chiral-Angle-Controlled Altermagnetic Spin Splitting in Nanotubes

Ersoy Sasioglu, Tom. G. Saunderson, Börge Göbel, Ingrid Mertig, Samir Lounis

Altermagnets exhibit momentum-dependent spin splitting despite having zero net magnetization. Here, we show that rolling a two-dimensional (2D) $d$-wave altermagnet into a nanotube transforms this momentum-dependent spin splitting into chiral-angle-controlled one-dimensional (1D) spin splitting through dimensional projection. Using a minimal tight-binding model and first-principles calculations, we demonstrate that the nanotube spin splitting follows a characteristic $\cos(2θ)$ dependence, vanishing for nodal orientations and reaching extrema for antinodal orientations. The mechanism remains robust across a broad class of nanotubes derived from 2D altermagnets. Our results establish dimensional projection as a general route for transferring momentum-dependent altermagnetic spin splitting into 1D systems and provide a framework for engineering spin-split quantum states in low-dimensional magnetic materials.

AG-2026.06-173

cond-mat.mtrl-sci

Optical Signature of Moiré Superlattices Formed by Twisted SrTiO$_3$ Membranes

T. A. M. Ragib Shahriar, Fumikazu Murakami, Xing He, Konnor Koons, Xinyan Li, Bumseop Kim, Shihan Qin, Varun Harbola, Jochen Mannhart, Yimo Han, Ruijuan Xu, Shengxi Huang, Andrew Rappe, Hanyu Zhu

Moiré superlattices formed at the interfaces of mismatched lattices have attracted significant interest over the past decade due to their large tunability of band parameters and interactions among electrons, spins, and lattices. Superlattices made from twisted perovskite oxides may have strong structure and potential modulation, but evidence of such modulation over macroscopic areas, particularly at large twisting angles, has not been clearly demonstrated so far. Here, we fabricated millimeter-scale twisted oxide bilayers at $36^\circ$ angle, close to the simple coincidence site lattice condition $\Sigma5$, from freestanding SrTiO$_3$ membranes. We discovered new low-frequency vibrational modes whose Raman activity, according to molecular dynamics simulations, is greatly enhanced by an asymmetric, twisted interface between the SrO and TiO$_2$ layers. Such an interface is energetically favorable from first-principles calculations and is corroborated by the observation of strong second harmonic generation from the interface comparable to that from the SrTiO$_3$ surface throughout the bilayer region. The results are consistent with interlayer coupling enhanced by high-temperature annealing and confirmed by cross-sectional scanning transmission electron microscopy imaging. Our work sheds light on the structural behavior of twisted oxides and provides directions for tuning their phononic and nonlinear optical properties in future studies.

AG-2026.06-082

cond-mat.mtrl-sci

Ferroelectric brightening of spin forbidden dark excitons in a WSe2/hybrid perovskite heterostructure

Xinyun Wang, Magdalena Grzeszczyk, Maxim Trushin, Ivan Verzhbitskiy, Dmitrii Litvinov, Yi Wei Ho, Yuan Chen, Zhenyue Wu, Mykola Telychko, Chuanqi Zhang, Andres Granados del Aguila, Kuan Eng Johnson Goh, Xinwei Li, Goki Eda, Shaffique Adam, Maciej Koperski, Kian Ping Loh

Long-lived dark excitons in monolayer WSe2 present promising candidates for carrying spin and valley information, but their optical access and spin manipulation have conventionally required the use of strong external magnetic fields. Here, using a ferroelectric hybrid perovskite heterostructure, we leverage the ferroelectric proximity effect to break the WSe2's in-plane rotational symmetry and brighten the spin-forbidden dark excitons under zero magnetic field conditions. Furthermore, we show that the twist angle between the WSe2 and perovskite crystals controls the ferroelectric coupling strength and valley-contrasting polarization. Our proposed mechanism, supported by a four-band tight-binding model, suggests that the ferroelectric proximity effect induces an asymmetric intersublattice interaction, generating an effective in-plane spin-orbit coupling (SOC) field that rotates spin/valley polarization and brightens dark excitons. Our work establishes ferroelectric proximity coupling as an electrically reconfigurable, magnetic-field-free strategy for spin exciton control in two-dimensional semiconductors.